STP80NF12

STB80NF12 STMICROELECTRONICS | Alldatasheet

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Technical content

N-CHANNEL 120V-0.013 Ω -80A TO-220/TO-247/TO-220FP/D²PAK STripFET™ II POWER MOSFET ■ TYPICAL R DS (on) = 0.013Ω ■ EXCEPTIONAL dv/dt CAPABILITY ■ 100% AVALANCHE TESTED ■ APPLICATION ORIENTED CHARACTERIZATION ■ SURFACE-MOUNTING D ²PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”)

DESCRIPTION

This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high- efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.

APPLICATIONS

■ HIGH-EFFICIENCY DC-DC CONVERTERS ■ UPS AND MOTOR CONTROL TYPE VDSS R DS(on) ID STB80NF12 STP80NF12 STP80NF12FP STW80NF12 120 V 120 V 120 V 120 V <0.018 Ω <0.018 Ω <0.018 Ω <0.018 Ω

80 A(*)

D ²PAK TO-263 (Suffix “T4”) TO-220FP TO-247 ABSOLUTE MAXIMUM RATINGS (•) Pulse width limited by safe operating area. (*) Limited by Package (2) ISD ≤35A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS , Tj ≤ TJMAX. (#) Refer to SOA for the max allovable currente values on FP-type due to thermal resistance value. (1) Starting Tj = 25 oC, ID = 40A, VDD = 45V Symbol Parameter Value Unit STB_P_W80NF12 STP80NF12FP VDS Drain-source Voltage (VGS = 0) 120 V VDGR Drain-gate Voltage (RGS = 20 kΩ ) 120 V VGS Gate- source Voltage ± 20 V ID (*) Drain Current (continuous) at TC = 25°C 80 80(#) A ID Drain Current (continuous) at TC = 100°C 60 60(#) A IDM (•) Drain Current (pulsed) 320 320(#) A Ptot Total Dissipation at TC = 25°C 300 45 W Derating Factor 2.0 0.3 W/°C dv/dt (1) Peak Diode Recovery voltage slope 10 V/ns EAS (2) Single Pulse Avalanche Energy 700 mJ Tstg Storage Temperature -55 to 175 °CTj Operating Junction Temperature INTERNAL SCHEMATIC DIAGRAM

STB80NF12 STW80NF12 STP80NF12 STP80NF12FP THERMAL DATA ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF ON (1) DYNAMIC TO-247 D 2PAK TO-220 TO-220FP Rthj-case Thermal Resistance Junction-case Max 0.5 0.5 3.33 °C/W Rthj-amb Tl Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max 50 300 62.5 300 62.5 300 °C/W Symbol Parameter Test Conditions Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 120 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS I D = 250 µA 2V R DS(on) Static Drain-source On Resistance VGS = 10 V I D = 40 A 0.013 0.018 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (*) Forward Transconductance VDS = 15 V I D = 40 A 80 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25V f = 1 MHz VGS = 0 4300 600 230 pF pF pF

STB80NF12 STW80NF12 STP80NF12 STP80NF12FP SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 50 V I D = 40 A R G = 4.7 Ω V GS = 10 V (Resistive Load, Figure 3) 145 ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 80 V ID = 80 A VGS = 10V 140 189 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit t d(off) tf Turn-off Delay Time Fall Time VDD = 50 V I D = 40 A R G = 4.7Ω, V GS = 10 V (Resistive Load, Figure 3) 134 115 ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 320 A A VSD (*) Forward On Voltage ISD = 80 A V GS = 0 1.3 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 80 A di/dt = 100A/µs VDD = 35 V T j = 150°C (see test circuit, Figure 5) 155 0.85 ns nC A ELECTRICAL CHARACTERISTICS (continued) Safe Operating Area Safe Operating Area for TO-220FP

STB80NF12 STW80NF12 STP80NF12 STP80NF12FP Thermal Impedance Thermal Impedance for TO-220FP Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance

STB80NF12 STW80NF12 STP80NF12 STP80NF12FP Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage Temperature

STB80NF12 STW80NF12 STP80NF12 STP80NF12FP Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times

STB80NF12 STW80NF12 STP80NF12 STP80NF12FP DIM. mm. inch. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.028 0.037 B2 1.14 1.7 0.045 0.067 C 0.45 0.6 0.018 0.024 C2 1.21 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 D1 8 0.315 E 10 10.4 0.394 0.409 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.591 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.069 M 2.4 3.2 0.094 0.126 R 0.4 0.016 V2 0° 8° 0° 8° D ²PAK MECHANICAL DATA

STB80NF12 STW80NF12 STP80NF12 STP80NF12FP DIM. mm. inch. A 4.4 4.6 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.40 2.70 0.094 0.106 H2 10 10.40 0.393 0.409 L2 16.40 0.645 L3 28.90 1.137 L4 13 14 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.260 L9 3.50 3.93 0.137 0.154 DIA 3.75 3.85 0.147 0.151 TO-220 MECHANICAL DATA

STB80NF12 STW80NF12 STP80NF12 STP80NF12FP DIM. mm inch A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 A B D E H G ¯ F 123F2 TO-220FP MECHANICAL DATA

STB80NF12 STW80NF12 STP80NF12 STP80NF12FP DIM. mm inch A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G 10.9 0.429 H 15.3 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L3 14.2 14.8 0.559 0.582 L4 34.6 1.362 L5 5.5 0.217 M 2 3 0.079 0.118 P025P TO-247 MECHANICAL DATA

STB80NF12 STW80NF12 STP80NF12 STP80NF12FP DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0075 0.082 R5 0 1 . 5 7 4 W 23.7 24.3 0.933 0.956 DIM. mm inch MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0.795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY 1000 1000 REEL MECHANICAL DATA * on sales type TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* D 2PAK FOOTPRINT TAPE MECHANICAL DATA

STB80NF12 STW80NF12 STP80NF12 STP80NF12FP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics  2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com