STP80NF03L-04

STP80NF03L-04-1 STMICROELECTRONICS | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 11

Technical content

STB80NF03L-04 STB80NF03L-04-1 N-CHANNEL 30V - 0.0035 Ω - 80A D2PAK/I2PAK/TO-220 STripFET™ II POWER MOSFET ■ TYPICAL R DS (on) = 0.0035Ω ■ EXCEPTIONAL dv/dt CAPABILITY ■ 100% AVALANCHE TESTED ■ LOW THRESHOLD DRIVE

DESCRIPTION

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip- based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ DC-DC & DC-AC CONVERTERS ■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) TYPE VDSS R DS(on) ID STB80NF03L-04/-1 STP80NF03L-04 30 V 30 V <0.004 Ω <0.004 Ω 80 A 80 A 1 2 3 TO-220 D 2PAK TO-263 I2PAK TO-262 INTERNAL SCHEMATIC DIAGRAM

Ordering Information

(•) Pulse width limited by safe operating area. () Current Limited by Package (1) ISD ≤80A, di/dt ≤240A/µs, VDD ≤ 24V, Tj ≤ TJMAX (2) Starting Tj = 25 oC, ID = 40A, VDD = 20V SALES TYPE MARKING PACKAGE PACKAGING STB80NF03L-04 80NF03L-04 @ D 2PAK TUBE STB80NF03L-04T4 80NF03L-04 @ D 2PAK TAPE & REEL STP80NF03L-04 80NF03L-04 @ TO-220 TUBE STB80NF03L-04-1 80NF03L-04 @ I2PAK TUBE Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 30 V VDGR Drain-gate Voltage (RGS = 20 kΩ ) 30 V VGS Gate- source Voltage ± 20 V ID () Drain Current (continuous) at TC = 25°C 80 A ID (**) Drain Current (continuous) at TC = 100°C 80 A IDM (•) Drain Current (pulsed) 320 A Ptot Total Dissipation at TC = 25°C 300 W Derating Factor 2 W/°C dv/dt (1) Peak Diode Recovery voltage slope 2 V/ns EAS (2) Single Pulse Avalanche Energy 2.3 J Tstg Storage Temperature -60 to 175 °C Tj Max. Operating Junction Temperature 175 °C

STB80NF03L-04/-1/STP80NF03L-04 THERMAL DATA ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF ON (*) DYNAMIC Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max Typ 0.5 62.5 300 °C/W °C/W Symbol Parameter Test Conditions Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage ID = 250 µA V GS = 0 30 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20 V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS I D = 250 µA 1V R DS(on) Static Drain-source On Resistance VGS = 10 V I D = 40 A VGS = 4.5 V I D = 40 A 0.0035 0.004 0.004 0.0055 Ω Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (*) Forward Transconductance VDS = 15 V I D = 15 A 50 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25V, f = 1 MHz, VGS = 0 5500 1670 290 pF pF pF

STB80NF03L-04/-1/STP80NF03L-04 SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 15 V I D = 40 A R G = 4.7 Ω V GS = 4.5 V (Resistive Load, Figure 3) 270 ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD =24V ID =80 A VGS =4.5V 85 110 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit t d(off) tf Turn-off Delay Time Fall Time VDD = 15 V I D = 40 A R G = 4.7Ω, V GS = 4.5 V (Resistive Load, Figure 3) 110 ns ns tr(Voff) tf tc Off-Voltage Rise Time Fall Time Cross-over Time V clamp = 24 V I D = 80 A R G = 4.7Ω V GS = 4.5 V (Inductive Load, Figure 5) 125 125 ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit I SD ISDM (•) Source-drain Current Source-drain Current (pulsed) 320 A A VSD (*) Forward On Voltage ISD = 80 A V GS = 0 1.5 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 80 A di/dt = 100A/µs VDD = 20 V T j = 150°C (see test circuit, Figure 5) 0.15 ns µC A ELECTRICAL CHARACTERISTICS (continued) Safe Operating Area Thermal Impedance

STB80NF03L-04/-1/STP80NF03L-04 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations

STB80NF03L-04/-1/STP80NF03L-04 . . Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature. . .

STB80NF03L-04/-1/STP80NF03L-04 Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times

STB80NF03L-04/-1/STP80NF03L-04 DIM. mm. inch. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.028 0.037 B2 1.14 1.7 0.045 0.067 C 0.45 0.6 0.018 0.024 C2 1.21 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 D1 8 0.315 E 10 10.4 0.394 0.409 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.591 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.069 M 2.4 3.2 0.094 0.126 R 0.4 0.015 V2 0° 8° 0° 8° D 2PAK MECHANICAL DATA

STB80NF03L-04/-1/STP80NF03L-04 DIM. mm inch A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 E 10 10.4 0.393 0.409 L 13.1 13.6 0.515 0.531 L1 3.48 3.78 0.137 0.149 L2 1.27 1.4 0.050 0.055 L B D E A CA1 e P011P5/E TO-262 (I2PAK) MECHANICAL DATA

STB80NF03L-04/-1/STP80NF03L-04 DIM. mm inch A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 A C D E F G Dia. TO-220 MECHANICAL DATA P011C

STB80NF03L-04/-1/STP80NF03L-04 DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0075 0.082 R5 0 1 . 5 7 4 W 23.7 24.3 0.933 0.956 DIM. mm inch MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0.795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY 1000 1000 REEL MECHANICAL DATA * on sales type TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* D 2PAK FOOTPRINT TAPE MECHANICAL DATA

STB80NF03L-04/-1/STP80NF03L-04 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics  2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com