STP80NE06-10 STMICROELECTRONICS | Alldatasheet

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Technical content

N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET n TYPICAL RDS(on) = 0.0085Ω n EXCEPTIONAL dv/dt CAPABILITY n 100% AVALANCHE TESTED n APPLICATION ORIENTED CHARACTERIZATION

DESCRIPTION

This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

APPLICATIONS

n SOLENOID AND RELAY DRIVERS n MOTOR CONTROL, AUDIO AMPLIFIERS n DC-DC CONVERTERS n AUTOMOTIVE ENVIRONMENT INTERNAL SCHEMATIC DIAGRAM February 1998 TO-220 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (VGS =0 ) 6 0 V V DGR Drain- gate Voltage (RGS =2 0k Ω ) 60 V V GS Gate-source Voltage ± 20 V ID Drain Current (continuous) at Tc =2 5 o C8 0 A ID Drain Current (continuous) at Tc =1 0 0oC5 7 A IDM (•) Drain Current (pulsed) 320 A P tot Total Dissipation at Tc =2 5 oC1 5 0 W Derating Factor 1 W/ oC dv/dt Peak Diode Recovery voltage slope 7 V/ns Tstg Storage Temperature -65 to 175 oC Tj Max. Operating Junction Temperature 175 oC (•) Pulse width limited by safe operating area ( 1)ISD ≤ 80 A,di/dt≤ 300 A/µs, VDD ≤ V(BR)DSS ,Tj≤ TJMAX TYPE V DSS R DS(on) ID STP80NE06-10 60 V <0.01 Ω 80 A

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 62.5 0.5 300 oC/W oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ <1 % ) 80 A E AS Single Pulse Avalanche Energy (starting Tj =2 5 oC, ID =I AR ,V DD =3 0V ) 250 mJ ELECTRICAL CHARACTERISTICS (Tcase =2 5oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage ID =2 5 0µ AV GS =0 60 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) V DS =M a xR a t i n g V DS =M a xR a t i n g T c =1 2 5 oC µ A µ A IGSS Gate-body Leakage Current (VDS =0 ) V GS = ± 20 V ± 100 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(th) Gate Threshold Voltage V DS =V GS ID =2 5 0µ A 234V R DS(on) Static Drain-source On Resistance V GS =1 0 V ID =4 0A 8 . 5 1 0 m Ω ID(on) On State Drain Current VDS >I D(on) xR DS(on)max V GS =1 0V 80 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗)F o r w a r d Transconductance V DS >I D(on) xR DS(on)max ID =40 A 19 38 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =2 5V f=1M H z V GS = 0 7600 890 150 10000 1100 200 pF pF pF STP80NE06-10

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time V DD =3 0V I D =4 0A R G =4.7 Ω V GS =1 0V (see test circuit, figure 3) 150 200 ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD =4 8V I D =8 0A V GS = 10 V 140 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time V DD =4 8V I D =4 0A R G =4.7 Ω VGS =1 0V (see test circuit, figure 5) 130 100 170 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 320 A A V SD (∗) Forward On Voltage I SD =8 0A V GS =0 1 . 5 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 80 A di/dt = 100 A/ µ s V DD =3 0V T j =1 5 0oC (see test circuit, figure 5) 100 0.4 ns µ C A (∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area for Thermal Impedance STP80NE06-10

Gate Charge vs Gate-source Voltage Transfer Characteristics Static Drain-source On Resistance Capacitance Variations STP80NE06-10

Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature STP80NE06-10

Fig. 1:Unclamped Inductive Load Test Circuit Fig. 3:Switching Times Test Circuits For Resistive Load Fig. 2:Unclamped Inductive Waveform Fig. 4:Gate Charge test Circuit Fig. 5:Test Circuit For Inductive Load Switching And Diode Recovery Times STP80NE06-10

DIM. mm inch A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 A C D E F G Dia. TO-220 MECHANICAL DATA P011C STP80NE06-10

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics.  1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... STP80NE06-10