STP80N70F4 STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 12
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package mechanical data
- 5 Revision history
Features
■ N-channel enhancement mode ■ 100% avalanched rated ■ Low gate charge ■ Very low on-resistance Application Switching applications
Description
This device is an N-channel Power MOSFET developed using ST’s STripFET™ DeepGATE™ technology. The device has a new gate structure and is specially designed to minimize on-state resistance to provide superior switching performance. Figure 1. Internal schematic diagram Table 1. Device summary
1 Electrical ratings
Table 2. Absolute maximum ratings
- Pulse width limited by safe operating area
Table 3. Thermal data
2 Electrical characteristics
Table 4. On/off states Table 5. Dynamic Table 6. Switching times
Table 7. Source drain diode
- Pulse width limited by safe operating area.
- Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Normalized B VDSS vs temperature Figure 7. Static drain-source on-resistance
4 VGS(V)8
3 Test circuits
Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
4 Package mechanical data
Table 8. TO-220 type A mechanical data
Figure 19. TO-220 type A drawing
5 Revision history
Table 9. Document revision history 12-Jan-2011 1 First release. 17-Dec-2012 2 Document status promoted from preliminary data to production data. Section 2.1: Electrical characteristics (curves) has been added.