Datasheet - STP80N240K6 - N-channel 800 V, 197 mΩ typ., 16 A MDmesh K6 Power MOSFET in a TO-220 package
Document overview
- Manufacturer or author: STMICROELECTRONICS
- PDF pages: 13
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 TO-220 type A package information
Features
Order code VDS RDS(on) max. ID STP80N240K6 800 V 220 mΩ 16 A
- Worldwide best RDS(on) x area
- Worldwide best FOM (figure of merit)
- Ultra low gate charge
- 100% avalanche tested
- Zener-protected
Applications
- Flyback converter
- Adapters for tablets, notebook and AIO
- LED lighting
Description
This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency. 1 2 3 TO-220 TAB D(2, TAB) G(1) S(3) AM01476v1_tab Product status link STP80N240K6 Product summary Order code STP80N240K6 Marking 80N240K6 Package TO-220 Packing Tube N-channel 800 V, 197 mΩ typ., 16 A MDmesh K6 Power MOSFET in a TO-220 package STP80N240K6 Datasheet DS13772 - Rev 4 - February 2024 For further information contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Pulse width limited by safe operating area.
Table 2. Thermal data Table 3. Avalanche characteristics
2 Electrical characteristics
TC = 25 °C unless otherwise specified. Table 4. On/off-state
- Specified by design, not tested in production.
Table 5. Dynamic
- Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 V to the stated
- Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 V to the stated
Table 6. Switching times Figure 17. Switching time waveform)
Electrical characteristics
Table 7. Source-drain diode
- Pulse width limited by safe operating area.
- Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Maximum transient thermal impedance Figure 3. Typical output characteristics Figure 4. Typical transfer characteristics Figure 5. Typical drain-source on-resistance Figure 6. Normalized on-resistance vs temperature
3 Test circuits
Figure 16. Test circuit for resistive load switching times Figure 17. Switching time waveform Figure 18. Test circuit for gate charge behavior Figure 19. Test circuit for inductive load switching and Figure 20. Unclamped inductive load test circuit Figure 21. Unclamped inductive waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
4.1 TO-220 type A package information
Figure 22. TO-220 type A package outline
Package information
Table 8. TO-220 type A package mechanical data DS13772 - Rev 4 page 10/13
Revision history
Table 9. Document revision history 30-Jun-2021 1 Initial release. Updated Applications on cover page. Updated Figure 15. Typical inductive load switching energy vs ID. Updated Figure 16. Typical inductive load switching energy vs RG. Removed "Figure 8. Typical output capacitance stored energy". 19-Feb-2024 4 Replaced Figure 1. Safe operating area.
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