Datasheet - STB80N20M5, STP80N20M5 - N-channel 200 V, 15 mΩ, 65 A, MDmesh™ M5 Power MOSFETs in D2PAK and TO‑220 packages
Document overview
- Manufacturer or author: STMICROELECTRONICS
- PDF pages: 17
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 D²PAK (TO-263) type A2 package information
- 4.2 D²PAK packing information
- 4.3 TO-220 type A package information
Features
Order codes VDS RDS(on) max. ID STB80N20M5
200 V 20 mΩ 65 A
- Extremely low R DS(on)
- Low gate charge and input capacitance
- Excellent switching performance
- 100% avalanche tested
Applications
- Switching applications
Description
These devices are N-channel Power MOSFETs based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency. Product status links STB80N20M5 STP80N20M5 Product summary Order code: STB80N20M5 Marking 80N20M5 Package D2PAK Packing Tape and reel Order code: STP80N20M5 Marking 80N20M5 Package TO-220 Packing Tube N-channel 200 V, 15 mΩ, 65 A, MDmesh™ M5 Power MOSFETs in D2PAK and TO‑220 packages STB80N20M5, STP80N20M5 Datasheet DS6286 - Rev 3 - January 2019 For further information contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Pulse width limited by safe operating area
Table 2. Thermal data
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified) Table 3. On/off states
- Defined by design, not subject to production test.
Table 4. Dynamic
- C o(tr) is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to
- C o(er) is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to
Table 5. Switching times Figure 18. Switching time
Electrical characteristics
Table 6. Source drain diode
- Pulse width limited by safe operating area.
- Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Gate charge vs gate-source voltage Figure 6. Static drain-source on-resistance
3 Test circuits
Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior Figure 15. Test circuit for inductive load switching and Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. STB80N20M5, STP80N20M5
Package information
4.1 D²PAK (TO-263) type A2 package information
Figure 19. D²PAK (TO-263) type A2 package outline
Table 7. D²PAK (TO-263) type A2 package mechanical data Figure 20. D²PAK (TO-263) recommended footprint (dimensions are in mm)
4.2 D²PAK packing information
Figure 21. D²PAK tape outline
Figure 22. D²PAK reel outline Table 8. D²PAK tape and reel mechanical data
4.3 TO-220 type A package information
Figure 23. TO-220 type A package outline
Table 9. TO-220 type A package mechanical data
Revision history
Table 10. Document revision history Updated title, features and internal schematic diagram on cover page. Section 4.1 D²PAK (TO-263) type A2 package information.