STP80N03L-06 STMICROELECTRONICS | Alldatasheet

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N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR TENTATIVE DATA ■ TYPICAL RDS(on) = 0.005 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100 oC ■ HIGH CURRENT CAPABILITY ■ 175oC OPERATING TEMPERATURE ■ HIGH dV/dt RUGGEDNESS ■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING ■ POWER MOTOR CONTROL ■ DC-DC & DC-AC CONVERTERS ■ SYNCRONOUS RECTIFICATION INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (VGS = 0) 30 V VDGR Drain- gate Voltage (RGS = 20 kΩ )3 0 V V GS Gate-source Voltage ± 15 V ID Drain Current (continuous) at Tc = 25 oC8 0 A ID Drain Current (continuous) at Tc = 100 oC6 0 A IDM (•) Drain Current (pulsed) 320 A P tot Total Dissipation at Tc = 25 oC 150 W Derating Factor 1 W/ oC dV/dt(1) Peak Diode Recovery voltage slope 5 V/ns Tstg Storage Temperature -65 to 175 oC Tj Max. Operating Junction Temperature 175 oC (•) Pulse width limited by safe operating area TYPE V DSS R DS(on) ID STP80N03L-06 30 V < 0.006 Ω 80 A (*) March 1996 TO-220

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 62.5 0.5 300 oC/W oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) 60 A E AS Single Pulse Avalanche Energy (starting Tj = 25 oC, ID = IAR , VDD = 25 V) 600 mJ EAR Repetitive Avalanche Energy (pulse width limited by Tj max, δ < 1%) 150 mJ IAR Avalanche Current, Repetitive or Not-Repetitive (Tc = 100 oC, pulse width limited by Tj max, δ < 1%) 60 A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage ID = 250 µA VGS = 0 30 V IDSS Zero Gate Voltage Drain Current (VGS = 0) V DS = Max Rating V DS = Max Rating x 0.8 Tc = 125 oC 250 1000 µ A µ A IGSS Gate-body Leakage Current (VDS = 0) V GS = ± 15 V ± 100 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(th) Gate Threshold Voltage VDS = VGS ID = 250 µ A 1 2.5 V R DS(on) Static Drain-source On Resistance V GS = 10V ID = 40 A V GS = 10V ID = 40 A Tc = 100oC V GS = 5V ID = 40 A V GS = 5V ID = 40 A Tc = 100oC 0.005 0.006 0.006 0.012 0.009 0.018 Ω Ω Ω Ω I D(on) On State Drain Current VDS > ID(on) x RDS(on)max V GS = 10 V 80 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗) Forward Transconductance V DS > ID(on) x RDS(on)max ID = 10 A 35 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz VGS = 0 6000 1000 250 pF pF pF STP80N03L-06

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time V DD = V ID = A R G = Ω VGS = V (see test circuit, figure 3) ns ns (di/dt)on Turn-on Current Slope V DD = V ID = A R G = Ω VGS = V (see test circuit, figure 5) A/µ s Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = V ID = A VGS = V nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time V DD = V ID = A R G = Ω VGS = V (see test circuit, figure 5) ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 320 A A V SD (∗) Forward On Voltage I SD = A VGS = 0 1.5 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = A di/dt = A/µ s V DD = V Tj = oC (see test circuit, figure 5) ns µ C A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area (1) ISD ≤ 60 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS , Tj ≤ TJMAX STP80N03L-06

DIM. mm inch A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 A C D E F G Dia. TO-220 MECHANICAL DATA P011C STP80N03L-06

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . . . STP80N03L-06