STP7NE10L STMICROELECTRONICS | Alldatasheet

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Technical content

N - CHANNEL 100V - 0.3 Ω - 7A - TO-220 STripFET POWER MOSFET PRELIMINARY DATA ■ TYPICAL RDS(on) = 0.3 Ω ■ EXCEPTIONAL dv/dt CAPABILITY ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 % AVALANCHE TESTED ■ APPLICATION ORIENTED CHARACTERIZATION

DESCRIPTION

This Power MOSFET is the latest development of STMicroelectronics unique " Single Feature Size " strip-based process. The resulting tran- sistor shows extremely high packing density for low on-resistance, rugged avalanche charac- teristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

APPLICATIONS

■ DC MOTOR CONTROL (DISK DRIVES,etc.) ■ DC-DC & DC-AC CONVERTERS ■ SYNCHRONOUS RECTIFICATION INTERNAL SCHEMATIC DIAGRAM TYPE V DSS R DS(on) ID STP7NE10L 100 V < 0.4 Ω 7 A ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (VGS = 0) 100 V V DGR Drain- gate Voltage (RGS = 20 kΩ ) 100 V VGS Gate-source Voltage ± 20 V ID Drain Current (continuous) at Tc = 25 oC7 A ID Drain Current (continuous) at Tc = 100 oC4 . 9 A IDM (•) Drain Current (pulsed) 28 A P tot Total Dissipation at Tc = 25 oC4 5 W Derating Factor 0.3 W/ oC dv/dt(1) Peak Diode Recovery voltage slope 6 V/ns Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 175 oC (•) Pulse width limited by safe operating area (1) ISD ≤7 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS , Tj ≤ TJMAX TO-220 October 1999 1/5

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 3.33 100 1.5 275 oC/W oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) E AS Single Pulse Avalanche Energy (starting Tj = 25 oC, ID = IAR , VDD = 30 V) 40 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage ID = 250 µ A VGS = 0 100 V IDSS Zero Gate Voltage Drain Current (VGS = 0) V DS = Max Rating V DS = Max Rating Tc = 100 oC µ A µ A IGSS Gate-body Leakage Current (VDS = 0) V GS = ± 20 V ± 100 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(th) Gate Threshold VoltageV DS = VGS ID = 250 µ A 1 1.7 2.5 V R DS(on) Static Drain-source On Resistance V GS = 10 V ID = 3.5 A V GS = 5 V ID = 3.5 A 0.3 0.35 0.4 0.45 Ω Ω ID(on) On State Drain Current VDS > ID(on) x RDS(on)max V GS = 10 V DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗) Forward Transconductance V DS > ID(on) x RDS(on)max ID =2.5 A 2 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz VGS = 0 345 450 pF pF pF STP7NE10L

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time V DD = 50 V ID = 2.5 A R G = 4.7 Ω VGS = 5 V ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 80 V ID = 5 A VGS = 5 V 10 14 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD=80V ID =5 A R G = 4.7 Ω VGS = 10 V ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) A A V SD (∗) Forward On Voltage I SD = 8 A VGS = 0 1.5 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5 A di/dt = 100 A/µ s V DD = 30 V Tj = 150 oC 190 ns µ C A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area STP7NE10L

DIM. mm inch A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 A C D E F G Dia. TO-220 MECHANICAL DATA P011C STP7NE10L

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com STP7NE10L