STP7NB40 STMICROELECTRONICS | Alldatasheet

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Technical content

N - CHANNEL ENHANCEMENT MODE PowerMESH  MOSFET PRELIMINARY DATA ■ TYPICAL RDS(on) = 0.75 Ω ■ EXTREMELY HIGH dV/dt CAPABILITY ■ 100% AVALANCHE TESTED ■ VERY LOW INTRINSIC CAPACITANCES ■ GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP7NB40 STP7NB40FP V DS Drain-source Voltage (VGS = 0) 400 V V DGR Drain- gate Voltage (RGS = 20 kΩ ) 400 V V GS Gate-source Voltage ± 30 V ID Drain Current (continuous) at Tc = 25 oC 7 4.4 A ID Drain Current (continuous) at Tc = 100 oC 4.4 2.8 A IDM (•) Drain Current (pulsed) 28 28 A P tot Total Dissipation at Tc = 25 oC1 0 0 3 5 W Derating Factor 0.8 0.28 W/ oC dv/dt(1) Peak Diode Recovery voltage slope 4.5 4.5 V/ns V ISO Insulation Withstand Voltage (DC)  2000 V Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC (•) Pulse width limited by safe operating area (1) ISD ≤ 7A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. January 1998 TO-220 TO-220FP TYPE V DSS R DS(on) ID STP7NB40 STP7NB40FP 400 V 400 V < 0.9 Ω < 0.9 Ω 7.0 A 4.4 A

R thj-case Thermal Resistance Junction-case Max 1.25 3.57 oC/W R thj-amb R thc-sink Tl Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 62.5 0.5 300 oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) E AS Single Pulse Avalanche Energy (starting Tj = 25 oC, ID = IAR , VDD = 50 V) 300 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage ID = 250 µA VGS = 0 400 V IDSS Zero Gate Voltage Drain Current (VGS = 0) V DS = Max Rating V DS = Max Rating Tc = 125 oC µ A µ A IGSS Gate-body Leakage Current (VDS = 0) V GS = ± 30 V ± 100 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(th) Gate Threshold Voltage V DS = VGS ID = 250 µ A 345V R DS(on) Static Drain-source On Resistance V GS = 10V ID = 3.5 A 0.75 0.9 Ω ID(on) On State Drain Current VDS > ID(on) x RDS(on)max V GS = 10 V DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗) Forward Transconductance V DS > ID(on) x RDS(on)max ID = 3.5 A 2.5 4.2 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz VGS = 0 705 132 720 175 pF pF pF STP7NB40/FP

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time V DD = 200 V ID = 3.5 A R G = 4.7 Ω VGS = 10 V (see test circuit, figure 3) 11.5 7.5 ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 320 V ID = 7 A VGS = 10 V 21 7.3 8.5 30 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time V DD = 320 V ID = 7 A R G = 4.7 Ω VGS = 10 V (see test circuit, figure 5) 9.5 16.5 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) A A V SD (∗) Forward On Voltage I SD = 7 A VGS = 0 1.6 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 7 A di/dt = 100 A/µs V DD = 100 V Tj = 150 oC (see test circuit, figure 5) 300 13.7 ns µ C A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area STP7NB40/FP

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelec tronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microe lectonics. © 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelec tronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . . . STP7NB40/FP