N-channel 650 V, 0.98 typ., 5 A MDmesh™ M2 Power MOSFETs in TO-220 and IPAK packages

Document overview

  • Manufacturer or author: STMICROELECTRONICS
  • PDF pages: 18

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package information
  • 4.1 TO-220 type A package information
  • 4.2 IPAK(TO-251) type A package information
  • 4.3 IPAK (TO-251) type C package information
  • 5 Revision history

Features

Order code VDS RDS(on) max ID STP7N65M2 650 V 1.15 Ω 5 A STU7N65M2 650 V 1.15 Ω 5 A  Extremely low gate charge  Excellent output capacitance (Coss) profile  100% avalanche tested  Zener-protected

Applications

 Switching applications

Description

These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to the strip layout associated with an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packaging STP7N65M2 7N65M2 TO-220 Tube STU7N65M2 7N65M2 IPAK Tube 321 TAB IPAK 1 2 3 TAB TO-220 D(2, TAB) G(1) S(3) AM01476v1_tab

1 Electrical ratings

Table 2: Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 5 A ID Drain current (continuous) at TC = 100 °C 3.2 A IDM (1) Drain current (pulsed) 20 A PTOT Total dissipation at TC = 25 °C 60 W dv/dt (2) Peak diode recovery voltage slope 15 V/ns dv/dt (3) MOSFET dv/dt ruggedness 50 Tstg Storage temperature - 55 to 150 °C Tj Operating junction temperature Notes: (1)Pulse width limited by safe operating area (2)ISD ≤ 5 A, di/dt ≤ 400 A/µs; VDSpeak < V(BR)DSS, VDD=400 V (3)VDS ≤ 520 V Table 3: Thermal data Symbol Parameter Value Unit TO-220 IPAK Rthj-case Thermal resistance junction-case max 2.08 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 100 °C/W Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax ) 1 A EAS Single pulse avalanche energy (starting Tj=25°C, ID= IAR; VDD=50 V) 103 mJ

2 Electrical characteristics

(TC = 25 °C unless otherwise specified) Table 5: On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0, ID = 1 mA 650 V IDSS Zero gate voltage drain current VGS = 0, VDS = 650 V 1 µA VGS = 0, VDS = 650 V, TC=125 °C 100 µA IGSS Gate-body leakage current VDS = 0, VGS = ± 25 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 2.5 A 0.98 1.15 Ω Table 6: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 100 V, f = 1 MHz, VGS = 0 - 270 - pF Coss Output capacitance - 14.5 - Crss Reverse transfer capacitance - 0.8 - C oss eq. (1) Equivalent output capacitance VDS = 0 to 520 V, VGS = 0 - 108 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 7 - Ω Qg Total gate charge VDD = 520 V, ID = 5 A, VGS = 10 V (see Figure 17: "Gate charge test circuit") - 9 - nC Qgs Gate-source charge - 2.3 - nC Qgd Gate-drain charge - 4.3 - nC Notes: (1)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 7: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 325 V, ID = 2.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 16: "Switching times test circuit for resistive load"and Figure 21: "Switching time waveform" ) - 8 - ns tr Rise time - 20 - ns td(off) Turn-off delay time - 30 - ns tf Fall time - 20 - ns

Table 8: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current 5 A ISDM (1) Source-drain current (pulsed) 20 A VSD (2) Forward on voltage ISD = 5 A, VGS = 0 - 1.6 V trr Reverse recovery time ISD = 5 A, di/dt = 100 A/µs VDD = 60 V (see Figure 21: "Switching time waveform") - 275 ns Qrr Reverse recovery charge - 1.62 µC IRRM Reverse recovery current - 11.8 A trr Reverse recovery time ISD = 5 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 21: "Switching time waveform") - 430 ns Qrr Reverse recovery charge - 2.54 µC IRRM Reverse recovery current - 11.9 A Notes: (1)Pulse width limited by safe operating area. (2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%

2.1 Electrical characteristics (curves)

Figure 2: Safe operating area for TO-220 Figure 3: Thermal impedance for TO-220 Figure 4: Safe operating area for IPAK Figure 5: Thermal impedance for IPAK Figure 6: Output characteristics Figure 7: Transfer characteristics K CG34360 c -1 tp (s)10

STP7N65M2, STU7N65M2 Test circuits

3 Test circuits

Figure 16: Switching times test circuit for resistive load Figure 17: Gate charge test circuit Figure 18: Test circuit for inductive load switching and diode recovery times Figure 19: Unclamped inductive load test circuit Figure 20: Unclamped inductive waveform Figure 21: Switching time waveform

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

4.1 TO-220 type A package information

Figure 22: TO-220 type A package outline

Table 9: TO-220 type A mechanical data Dim. mm Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95

4.2 IPAK(TO-251) type A package information

Figure 23: IPAK (TO-251) type A package outline

Table 10: IPAK (TO-251) type A package mechanical data Dim. mm Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 0.95 b4 5.20 5.40 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e 2.28 e1 4.40 4.60 H 16.10 L 9.00 9.40 L1 0.80 1.20 0.80 1.00 10°

4.3 IPAK (TO-251) type C package information

Figure 24: IPAK (TO-251) type C package outline 0068771_IK_typeC_rev13

Table 11: IPAK (TO-251) type C package mechanical data Dim. mm Min. Typ. Max. A 2.20 2.30 2.35 A1 0.90 1.00 1.10 b 0.66 0.79 0.90 b4 5.23 5.33 5.43 c 0.46 0.59 c2 0.46 0.59 D 6.00 6.10 6.20 D1 5.20 5.37 5.55 E 6.50 6.60 6.70 E1 4.60 4.78 4.95 e 2.20 2.25 2.30 e1 4.40 4.50 4.60 H 16.18 16.48 16.78 L 9.00 9.30 9.60 L1 0.90 1.00 1.20 L2 0.90 1.08 1.25 ϑ1 3° 5° 7° ϑ2 1° 3° 5°

5 Revision history

Table 12: Document revision history Date Revision Changes 07-Aug-2014 1 First release. 09-Oct-2014 2 Added and . Updated not found. Minor text changes. 28-May-2015 3 Document status promoted form preliminary to production data. Updated package information.