STP75N75F4 VBSEMI | Alldatasheet

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Technical content

N-Channel 80 V (D-S) MOSFET

FEATURES

  • TrenchFET® Power MOSFET
  • 100 % Rg and UIS Teste d

APPLICATIONS

  • Primary Side Switching
  • Synchronous Rectification
  • DC/AC Inverters
  • LED Backlighting Notes a. Pac k age limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. PRODUCT SUMMARY VDS (V) R DS(on) () Max. I D (A) Q g (Typ.) 0.0065at VGS = 10 V 17.1 nC0.0070at VGS = 6.0 V 75 0.0085at VGS = 4.5 V 65 N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless ot herwise noted) Parameter Symbol L imit Unit Drain-Source Voltage VDS 80 VGate-Source V oltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID A TC = 70 °C 65 TA = 25 °C 28.6b, c TA = 70 °C 24.9b, c Pulsed Drain Current (t = 100 μs) IDM 350 Continuous Source-Drain Diode Current TC = 25 °C IS TA = 25 °C 4.5b, c Single Puls e Avalanche Current L = 0.1 mH IAS 30 Single Pulse A valanche Energy EAS 45 mJ Maximum Power Dissipation TC = 25 °C PD 180 WTC = 70 °C 120 TA = 25 °C 5b, c TA = 70 °C 3.2b, c Operating Junction and St orage Temperature Range TJ, Tstg - 55 to 150 °CSoldering Recommendations (Peak Temperature) 260 T O-220AB Top View GD S a THERMAL RESISTANCE RATINGS Parameter Symbol T ypical Maximum Unit Maximum Junction-to-Ambienta t  10 sec RthJA 15 18 °C/WSteady State 40 50 Maximum Junction-to-Case RthJC 0.85 1.1 a a a STP75N75F4 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.ocm

a. Pulse te st; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those li sted under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless ot herwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Sourc e Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 80 V VDS Temperatur e Coefficient VDS/TJ ID = 250 μA 37 mV/°CVGS(th) Temperature Co efficient VGS(th)/TJ - 6.1 Gate-Source Thre shold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 3.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate V oltage Drain Current IDSS VDS = 80 V, VGS = 0 V 1 μAVDS = 80 V, VGS = 0 V, TJ = 55 °C 10 On-State Dr ain Currenta ID(on) VDS  5 V, VGS = 10 V 85 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 20 A 0.0065 VGS = 6 V, ID = 15 A 0.0070 VGS = 4.5 V, ID = 10 A 0.0085 Forwar d Transconductancea gfs VDS = 10 V, ID = 20 A 60 S Dynamicb Input Capacitance Ciss VDS = 40 V, VGS = 0 V, f = 1 MHz 3855 pFOutput Capacitance Coss 1120 Revers e Transfer Capacitance Crss 376 Total Gate Charge Qg VDS = 40 V,VGS = 10 V, ID = 10 A 35.5 nC VDS = 40 V, VGS = 6 V, ID = 10 A 22 VDS = 40 V,VGS = 4.5 V, ID = 10 A Gate-Sourc e Charge Qgs 5.3 Gate-Drain Charge Qgd 7.3 Output Charge Qoss VDS = 40 V, VGS = 0 V 57 86 Gate Resista nce Rg f = 1 MHz 0.5 1.3 2  Turn-On Delay Time td(on) VDD = 40 V, RL = 4  ID  10 A, VGEN = 10 V, Rg = 1  12 24 ns Rise Time tr 81 6 Turn-Off De layTime td(off) 32 64 Fall T ime tf 71 4 Turn-On Delay T ime td(on) VDD = 40 V, RL = 4  ID  10 A, VGEN = 6.0 V, Rg = 1  14 28 Rise Time tr 11 22 Turn-Off D elayTime td(off) 30 60 Fall T ime tf 81 6 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S TC = 25 °C 75 APulse Diode F orward Current (t = 100 μs) I SM 150 Body Diod e Voltage VSD IS = 5 A 0.76 1.1 V Body Diode Reverse Recovery Time trr IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C 38 75 ns Bo dy Diode Reverse Recovery Charge Q rr 36 70 nC Reverse Recovery Fall Time ta 19 nsReverse Recove ry Rise Time tb 19 STP75N75F4 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.ocm

ACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain C urrent Gate Charge Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 100 ID - Drain Current (A) VDS - Drain-t o-Source Voltage (V) VGS = 4 V VGS = 3 V VGS = 10 V thru 7V VGS = 6 V 0.0050 0.0070 0.0090 0.0110 0.0130 0.0150 0 20 40 60 80 100 RDS(on) - On-Resis tance (Ω) ID - Drain Current (A) VGS = 4.5 V VGS = 6.0 V VGS = 10 V 0 8 16 24 32 40 VGS - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VDS = 40 V VDS = 60 V VDS = 20 V ID = 10 A 100 120 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = 125 °C TC = - 55 °C 1000 2000 3000 4000 5000 0 12 24 36 48 60 C - Capacitance (pF) VDS - Drain-t o-Source Voltage (V) Ciss Coss Crss 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 RDS(on) - On-Resis tance (Normalized) TJ - Junction Temperature (°C) ID = 20 A VGS = 10 V VGS = 6V STP75N75F4 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.ocm

ACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Safe Operating Area, Junction-to-Ambient 0.001 0.01 0.1 100 1.2 IS - Source Current (A) VSD - Source- to-Drain Voltage (V) TJ = 150 °C TJ = 25 °C - 1.0 - 0.7 - 0.4 - 0.1 0.2 0.5 - 50 - 25 0 25 50 75 100 125 150 VGS(th) Variance (V) TJ - Temperature (°C) ID = 250 μA ID = 5 mA 0.000 0.010 0.020 0.030 0.040 0.050 0 2 4 6 8 10 RDS(on) - On-Resis tance (Ω) VGS - Gate-to-Source Voltage (V) TJ = 125 °C TJ = 25 °C ID = 20 A 100 200 300 400 500 0.001 0.01 0.1 1 10 Power (W Time (s) 0.01 0.1 100 1000 0.01 0.1 1 10 100 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 ms Limited by RDS(on)* 1 ms IDM Limited TA = 25 °C Single Pulse BVDSS Limited 10 ms 10 s 1 s DC ID Limited 100 μs STP75N75F4 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.ocm

ACTERISTICS (25 °C, unless otherwise noted) Current Derating* Power, Juncti on-to-Case Power, Junction-to-Ambient * The power dissipat ion PD is based on TJ(max.) = 150 °C, using junction-t o-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 0 25 50 75 100 125 150 ID - Drain Current (A) TC - Case Temperature (°C) Package Limited 0 25 50 75 100 125 150 Power (W TC - Case Temperature (°C) 0.0 0.5 1.0 1.5 2.0 2.5 0 25 50 75 100 125 150 Power (W TA - Ambient Temp erature (°C) STP75N75F4 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.ocm

ACTERISTICS (25 °C, unless otherwise noted) Normalized T hermal Transient Impedance, Junction-to-Ambient Normalized Thermal Transient Impedance, Junction-to-Case 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Normalized Effective Transient Thermal I mpedance Square Wave Pulse Duration (s) Duty Cycle = 0. 0.2 0.1 0.05 0.02 Single Pulse Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base=R thJA = 70 °C/W 3. TJM -T A =P DMZthJA(t) 4. Surface Mounted 0.01 0.1 0.0001 0.001 0.01 0.1 1 Normalized Effective Transient Thermal I mpedance Square Wave Pulse Duration (s) Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse STP75N75F4 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.ocm

  • M = 1.32 mm to 1.62 mm (dim ension including protrusion) Heatsink hole for HVM 321 L L(1) D H(1) Q Ø P A F J(1) b(1) e(1) e E b C MILLIMETERS INCHES DIM. MIN . MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 Ø P 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471 STP75N75F4 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.ocm

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. STP75N75F4 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.ocm