STP75N15

STP75N15 STMICROELECTRONICS | Alldatasheet

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STP75N15 - STB75N15 - STW75N15 Table 3: Absolute Maximum ratings (/circle6 ) Pulse width limited by safe operating area (1) ISD ≤ 75A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS , Tj ≤ TJMAX. Table 4: Thermal Data Table 5: Avalanche Characteristics Symbol Parameter Value Unit TO-220/D²PAK TO-247 VDS Drain-source Voltage (VGS = 0) 150 V VDGR Drain-gate Voltage (RGS = 20 kΩ )1 5 0 V VGS Gate- source Voltage ± 26 V ID Drain Current (continuous) at TC = 25°C7 5 A ID Drain Current (continuous) at TC = 100°C4 8 A IDM (/circle6 ) Drain Current (pulsed) 300 A PTOT Total Dissipation at TC = 25°C 300 350 W Derating Factor 2 2.38 W/ °C dv/dt (1) Peak Diode Recovery voltage slope TBD V/ns Tj Tstg Operating Junction Temperature Storage Temperature -55 to 150 °C TO-220/D²PAK TO-247 Unit Rthj-case Thermal Resistance Junction-case Max 0.5 0.42 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) TBD A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR , VDD = 50 V) TBD mJ

STP75N15 - STB75N15 - STW75N15 ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 6: On/Off Table 7: Dynamic Table 8: Source Drain Diode (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 150 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 26V ±100 nA VGS(th) Gate Threshold Voltage V DS = VGS , ID = 250 µA 2 3 4 V R DS(on) Static Drain-source On Resistance VGS = 10V, ID = 37.5 A 0.023 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS = 75 V, ID =37.5 A TBD S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 4500 TBD TBD pF pF pF td(on) tr td(off) tr Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time VDD = 75V, ID = 37.5 A, R G = 4.7 Ω VGS = 10 V ( see Figure 4) TBD TBD TBD TBD ns ns ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 126V, ID = 75 A, VGS = 10V (Figure 7) 110 TBD TBD TBD nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) 300 A A VSD (1) Forward On Voltage I SD = 75 A, VGS = 0 1.5 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 37.5 A, di/dt = 100A/µs VDD = 75 V, Tj = 25°C (see test circuit, Figure 5) TBD TBD TBD ns µC A trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 37.5 A, di/dt = 100A/µs VDD = 75 V, Tj = 150°C (see test circuit, Figure 5) TBD TBD TBD ns µC A

STP75N15 - STB75N15 - STW75N15 DIM. mm. inch A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 TO-220 MECHANICAL DATA

STP75N15 - STB75N15 - STW75N15 DIM. mm. inch A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 0.620 e5 . 4 5 0 . 2 1 4 L 14.20 14.80 0.560 0.582 L1 3.70 4.30 0.14 0.17 L2 18.50 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S5 . 5 0 0 . 2 1 6 TO-247 MECHANICAL DATA

STP75N15 - STB75N15 - STW75N15 TO-247 MECHANICAL DATA DIM. mm. inch A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 8 0.315 E 10 10.4 0.393 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R0 . 4 0 . 0 1 5 V2 0 º 4º D 2PAK MECHANICAL DATA

STP75N15 - STB75N15 - STW75N15 TAPE AND REEL SHIPMENT (suffix ”T4”)* TUBE SHIPMENT (no suffix)* D 2PAK FOOTPRINT * on sales type DIM. mm inch MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY 1000 1000 REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 TAPE MECHANICAL DATA

STP75N15 - STB75N15 - STW75N15 Table 9: Revision History Date Revision Description of Changes 08-Nov-2004 1 First Release.

STP75N15 - STB75N15 - STW75N15 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America