STP70NF3LL

STP70NF3LL STMICROELECTRONICS | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 10

Technical content

NEW DATASHEET ACCORDING TO PCN DSG/CT/2C13 MARKING: P70NF3LL@ B70NF3LL@ STB70NF3LL STP70NF3LL N-CHANNEL 30V - 0.0075 Ω - 70A D²PAK/TO-220 LOW GATE CHARGE STripFET™ II POWER MOSFET ■ TYPICAL R DS (on) = 0.0075 Ω @ 10 V ■ OPTIMAL R DS(on) x Qg TRADE-OFF @ 4.5 V ■ CONDUCTION LOSSES REDUCED ■ SWITCHING LOSSES REDUCED

DESCRIPTION

This application specific Power MOSFET is the third genaration of STMicroelectronis unique "Sin- gle Feature Size™" strip-based process. The re- sulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high effi- ciency are of paramount importance.

APPLICATIONS

■ SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS ■ SWITCHING APPLICATIONS

Ordering Information

TYPE VDSS R DS(on) ID STB70NF3LL STP70NF3LL 30 V 30 V < 0.0095 Ω < 0.0095 Ω 70 A 70 A SALES TYPE MARKING PACKAGE PACKAGING STB70NF3LLT4 B70NF3LL@ D 2PAK TAPE & REEL STP70NF3LL P70NF3LL@ TO-220 TUBE TO-220 D 2PAK TO-263 (Suffix “T4”) ABSOLUTE MAXIMUM RATINGS (•) Current limited by the package (••) Pulse width limited by safe operating area. (1) ISD ≤70A, di/dt ≤350A/µs, VDD ≤ V(BR)DSS , Tj ≤ TJMAX (2) Starting Tj = 25 oC, ID = 35A, VDD = 25V Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 30 V VDGR Drain-gate Voltage (RGS = 20 kΩ ) 30 V VGS Gate- source Voltage ± 16 V ID (•) Drain Current (continuous) at TC = 25°C 70 A ID Drain Current (continuous) at TC = 100°C 50 A IDM (••) Drain Current (pulsed) 280 A Ptot Total Dissipation at TC = 25°C 100 W Derating Factor 0.67 W/°C dv/dt (1) Peak Diode Recovery voltage slope 5.5 V/ns EAS (2) Single Pulse Avalanche Energy 500 mJ Tstg Storage Temperature -55 to 175 °CTj Operating Junction Temperature INTERNAL SCHEMATIC DIAGRAM

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF ON (*) DYNAMIC Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 1.5 62.5 300 °C/W °C/W Symbol Parameter Test Conditions Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 30 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 16 V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS I D = 250 µA 1V R DS(on) Static Drain-source On Resistance VGS = 10 V I D = 35 A VGS = 4.5 V I D = 18 A 0.0075 0.010 0.0095 0.012 Ω Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (*) Forward Transconductance VDS = 15 V I D = 35 A 25 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25V f = 1 MHz VGS = 0 1650 540 130 pF pF pF

(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 15 V I D = 35 A R G = 4.7 Ω V GS = 4.5 V (Resistive Load, Figure 3) 156 ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 15V ID = 70A VGS = 4.5V 24 8.5 33 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 15 V I D = 35 A R G = 4.7Ω, V GS = 4.5 V (Resistive Load, Figure 3) ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 280 A A VSD (*) Forward On Voltage ISD = 70 A VGS = 0 1.3 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 70 A di/dt = 100A/µs VDD = 25 V T j = 150°C (see test circuit, Figure 5) 2.5 ns nC A ELECTRICAL CHARACTERISTICS (continued) Safe Operating Area Thermal Impedance

Output Characteristics Transfer Characteristics Source-drain Diode Forward Characteristics Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations

. . Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Normalized Breakdown Voltage vs Temperature. . .

Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times

DIM. mm. inch. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.028 0.037 B2 1.14 1.7 0.045 0.067 C 0.45 0.6 0.018 0.024 C2 1.21 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 D1 8 0.315 E 10 10.4 0.394 0.409 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.591 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.069 M 2.4 3.2 0.094 0.126 R 0.4 0.015 V2 0° 8° 0° 8° D 2PAK MECHANICAL DATA

DIM. mm inch A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 A C D E F G Dia. TO-220 MECHANICAL DATA P011C

DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0075 0.082 R5 0 1 . 5 7 4 W 23.7 24.3 0.933 0.956 DIM. mm inch MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0.795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY 1000 1000 REEL MECHANICAL DATA * on sales type TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* D 2PAK FOOTPRINT TAPE MECHANICAL DATA

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics All other names are the property of their respective owners.  2003 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.