STD6NK50ZT4 STMICROELECTRONICS | Alldatasheet
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Technical content
N-CHANNEL 500V - 0.93Ω - 5.6A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH™ MOSFET I TYPICAL R DS (on) = 0.93Ω I EXTREMELY HIGH dv/dt CAPABILITY I 100% AVALANCHE TESTED I GATE CHARGE MINIMIZED I VERY LOW INTRINSIC CAPACITANCES I VERY GOOD MANUFACTURING REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip- based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. Such series comple- ments ST full range of high voltage MOSFETs in- cluding revolutionary MDmesh™ products.
APPLICATIONS
I HIGH CURRENT, HIGH SPEED SWITCHING I IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC I LIGHTING ORDER CODES TYPE V DSS R DS(on) ID Pw STP6NK50Z STF6NK50Z STD6NK50Z 500 V 500 V 500 V <1 . 2Ω <1 . 2Ω <1 . 2Ω 5.6 A 5.6 A 5.6 A 90 W 25 W 90 W PART NUMBER MARKING PACKAGE PACKAGING STP6NK50Z P6NK50Z TO-220 TUBE STF6NK50Z F6NK50Z TO-220FP TUBE STD6NK50ZT4 D6NK50Z DPAK TAPE & REEL TO-220 TO-220FP DPAK INTERNAL SCHEMATIC DIAGRAM
STP6NK50Z - STF6NK50Z - STD6NK50Z ABSOLUTE MAXIMUM RATINGS (/circle6 ) Pulse width limited by safe operating area (1) ISD ≤ 5.6A, di/dt≤ 200 A/µs, VDD ≤ V(BR)DSS ,Tj≤ TJMAX. (*) Limited only by maximum temperature allowed THERMAL DATA AVALANCHE CHARACTERISTICS GATE-SOURCE ZENER DIODE PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Symbol Parameter Value Unit STP6NK50Z STD6NK50Z STF6NK50Z VDS Drain-source Voltage (VGS =0 ) 500 V VDGR Drain-gate Voltage (RGS =2 0kΩ ) 500 V VGS Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC =2 5°C 5.6 5.6 (*) A ID Drain Current (continuous) at TC = 100°C 3.5 3.5 (*) A IDM (/circle6 ) Drain Current (pulsed) 22.4 22.4 (*) A PTOT Total Dissipation at TC =2 5°C 90 25 W Derating Factor 0.72 0.2 W/ °C VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ) 3000 V dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns VISO Insulation Withstand Voltage (DC) - 2500 V Tj Tstg Operating Junction Temperature Storage Temperature - 5 5t o1 5 0 °C TO-220 DPAK TO-220FP Rthj-case Thermal Resistance Junction-case Max 1.38 5 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tjmax) 5.6 A EAS Single Pulse Avalanche Energy (starting Tj=2 5°C, ID =IAR ,VDD =5 0V ) 180 mJ Symbol Parameter Test Conditions Min. Typ. Max. Unit BV GSO Gate-Source Breakdown Voltage Igs=± 1mA (Open Drain) 30 V
STP6NK50Z - STF6NK50Z - STD6NK50Z ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF DYNAMIC SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq.is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS . Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID =1m A ,VGS = 0 500 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) VDS =M a xR a t i n g VDS =M a xR a t i n g ,TC = 125°C µA µA IGSS Gate-body Leakage Current (VDS =0 ) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS =V GS ,ID = 50µA 3 3.75 4.5 V R DS(on) Static Drain-source On Resistance VGS =1 0 V ,ID = 2.8 A 0.93 1.2 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs(1) Forward Transconductance V DS =8V ,ID =2 . 8A 4 . 3 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =2 5 V ,f=1M H z ,VGS = 0 690 100 pF pF pF C oss eq.(3) Equivalent Output Capacitance VGS =0 V ,VDS = 0V to 400V 52 pF td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time V DD =2 5 0V ,ID =2 . 8A R G =4 . 7Ω VGS =1 0V (Resistive Load see, Figure 3) 23.5 ns ns ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =4 0 0 V ,ID =5 . 6A , VGS =1 0 V 24.6 4.9 13.3 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit I SD ISDM (2) Source-drain Current Source-drain Current (pulsed) 5.6 22.4 A A VSD (1) F o r w a r dO nV o l t a g eISD =5 . 6A ,VGS =0 1.6 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5.6 A, di/dt = 100 A/µs VDD =4 8 V ,Tj=2 5°C (see test circuit, Figure 5) 254 1.2 ns µC A trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5.6 A, di/dt = 100 A/µs VDD =4 8 V ,Tj= 150°C (see test circuit, Figure 5) 360 1.9 ns µC A
STP6NK50Z - STF6NK50Z - STD6NK50Z Thermal Impedance for DPAKSafe Operating Area for DPAK Thermal Impedance for TO-220FPSafe Operating Area for TO-220FP Thermal Impedance for TO-220Safe Operating Area for TO-220
STP6NK50Z - STF6NK50Z - STD6NK50Z Transconductance Transfer CharacteristicsOutput Characteristics Capacitance VariationsGate Charge vs Gate-source Voltage Static Drain-source On Resistance
STP6NK50Z - STF6NK50Z - STD6NK50Z Maximum Avalanche Energy vs Temperature Normalized BVDSS vs TemperatureSource-drain Diode Forward Characteristics Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.
STP6NK50Z - STF6NK50Z - STD6NK50Z Fig. 5:Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4:Gate Charge test Circuit Fig. 2:Unclamped Inductive WaveformFig. 1:Unclamped Inductive Load Test Circuit Fig. 3:Switching Times Test Circuit For Resistive Load
STP6NK50Z - STF6NK50Z - STD6NK50Z DIM. mm. inch A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 TO-220 MECHANICAL DATA
STP6NK50Z - STF6NK50Z - STD6NK50Z A B D E H G F 123F2 L4L5 DIM. mm. inch A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.5 0.045 0.067 F2 1.15 1.5 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 TO-220FP MECHANICAL DATA
STP6NK50Z - STF6NK50Z - STD6NK50Z DIM. mm inch A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0 o 8o 0o 0o P032P_B TO-252 (DPAK) MECHANICAL DATA
STP6NK50Z - STF6NK50Z - STD6NK50Z TAPE AND REEL SHIPMENT (suffix ”T4”)* TUBE SHIPMENT (no suffix)* DPAK FOOTPRINT * on sales type DIM. mm inch MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0.795 G 16.4 18.4 0.645 0.724 N 50 1.968 T 22.4 0.881 BASE QTY BULK QTY 2500 2500 REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 0.476 D 1.5 1.6 0.059 0.063 D1 1.5 0.059 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 1.574 W 15.7 16.3 0.618 0.641 TAPE MECHANICAL DATA All dimensions are in millimetersAll dimensions are in millimeters
STP6NK50Z - STF6NK50Z - STD6NK50Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com