STP6NC80Z

STP6NC80Z STMICROELECTRONICS | Alldatasheet

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Technical content

N-CHANNEL 800V - 1.5Ω - 5.4A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET ■ TYPICAL R DS (on) = 1.5Ω ■ EXTREMELY HIGH dv/dt AND CAPABILITY GATE-TO- SOURCE ZENER DIODES ■ 100% AVALANCHE TESTED ■ VERY LOW GATE INPUT RESISTANCE ■ GATE CHARGE MINIMIZED

DESCRIPTION

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to- back Zener diodes between gate and source. Such ar- rangement gives extra ESD capability with higher rug- gedness performance as requested by a large variety of single-switch applications.

APPLICATIONS

■ SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION ■ WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS (•)Pulse width limited by safe operating area TYPE V DSS R DS(on) ID STP6NC80Z/FP 800V < 1.8 Ω 5.4 A STB6NC80Z/-1 800V < 1.8 Ω 5.4 A Symbol Parameter Value Unit STP(B)6NC80Z(-1) STP6NC80ZFP VDS Drain-source Voltage (VGS =0 ) 800 V VDGR Drain-gate Voltage (RGS =2 0kΩ ) 800 V VGS Gate- source Voltage ± 25 V ID Drain Current (continuous) at TC = 25°C 5.4 5.4(*) A ID Drain Current (continuous) at TC = 100°C 3.4 3.4(*) A IDM (1) Drain Current (pulsed) 21 21(*) A PTOT Total Dissipation at TC = 25°C 125 40 W Derating Factor 1 0.32 W/°C IGS Gate-source Current (● )± 5 0 m A VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ) 3K V dv/dt Peak Diode Recovery voltage slope 3 V/ns VISO Insulation Winthstand Voltage (DC) -- 2000 V Tstg Storage Temperature –65 to 150 °C Tj Max. Operating Junction Temperature 150 °C (1)ISD ≤5.4A, di/dt≤100A/µs, VDD ≤ V(BR)DSS ,Tj≤ TJMAX .(*)Pulse width Limited by maximum temperature allowed TO-220 TO-220FP 1 2 3 I²PAK (Tabless TO-220) D²PAK

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF ON (1) DYNAMIC TO-220 / D²PAK / I²PAK TO-220FP Rthj-case Thermal Resistance Junction-case Max 1 3.13 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tjmax) 5.4 A EAS Single Pulse Avalanche Energy (starting Tj= 25 °C, ID =IAR ,VDD =5 0V ) 237 mJ Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS =0 800 V ΔBV DSS /ΔTJ Breakdown Voltage Temp. Coefficient ID =1m A ,VGS =0 0.9 V/°C IDSS Zero Gate Voltage Drain Current (VGS =0 ) VDS = Max Rating 1µ A VDS = Max Rating, TC = 125 °C 50 µA IGSS Gate-body Leakage Current (VDS =0 ) VGS = ±20V ±10 µA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS =V GS ,ID = 250µA 345V R DS(on) Static Drain-source On Resistance VGS =1 0 V ,ID =3A 1.5 1.8 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs(1) Forward Transconductance V DS >ID(on)xR DS(on)max, ID =3 A C iss Input Capacitance VDS =2 5 V ,f=1M H z ,VGS =0 1600 pF C oss Output Capacitance 125 pF C rss Reverse Transfer Capacitance 12 pF

ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE GATE-SOURCE ZENER DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. ΔVBV = α T( 2 5 ° - T )B VGSO (25°) PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD =4 0 0V ,ID =3A R G = 4.7Ω VGS =1 0 V (see test circuit, Figure 3) 26 ns tr Rise Time 10 ns Q g Total Gate Charge VDD =6 4 0 V ,ID = 6A, VGS =1 0 V 45 nC Q gs Gate-Source Charge 12 nC Q gd Gate-Drain Charge 18 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) Off-voltage Rise Time VDD = 640V, ID =6A , R G =4 . 7Ω, VGS = 10V (see test circuit, Figure 5) 11 ns tf Fall Time 13 ns tc Cross-over Time 19 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 5.4 A ISDM (2) Source-drain Current (pulsed) 21 A VSD (1) Forward On Voltage ISD = 5.4 A, VGS =0 1.6 V trr Reverse Recovery Time ISD = 6 A, di/dt = 100A/µs, VDD =5 0 V ,Tj= 150°C (see test circuit, Figure 5) 850 ns Q rr Reverse Recovery Charge 8.1 µC IRRM Reverse Recovery Current 19 A Symbol Parameter Test Conditions Min. Typ. Max. Unit BV GSO Gate-Source Breakdown Voltage Igs=± 1mA (Open Drain) 25 V α T Voltage Thermal Coefficient T=25°C Note(3) 1.3 10-4/°C Rz Dynamic Resistance ID =5 0m A ,VGS =0 90 Ω

Safe Operating Area For TO-220FPSafe Operating Area For TO-220 /D²PAK/I²PAK Thermal Impedance For TO-220 /D²PAK/I²PAK Output Characteristics Thermal Impedance For TO-220FP Transfer Characteristics

Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs Temp. Gate Charge vs Gate-source Voltage Static Drain-source On ResistanceTransconductance

Source-drain Diode Forward Characteristics

Fig. 5:Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4:Gate Charge test Circuit Fig. 2:Unclamped Inductive WaveformFig. 1:Unclamped Inductive Load Test Circuit Fig. 3:Switching Times Test Circuits For Resistive Load

DIM. mm inch A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 A C D E F G Dia. TO-220 MECHANICAL DATA P011C

DIM. mm inch A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 A B D E H G ¯ F 123F2 TO-220FP MECHANICAL DATA

DIM. mm inch A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 E 10 10.4 0.393 0.409 L 13.1 13.6 0.515 0.531 L1 3.48 3.78 0.137 0.149 L2 1.27 1.4 0.050 0.055 L B D E A CA1 e P011P5/E TO-262 (I2PAK) MECHANICAL DATA

DIM. mm inch A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.21 1.36 0.047 0.053 D 8.95 9.35 0.352 0.368 E 10 10.4 0.393 0.409 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 L2 L3L B2 B GE A D C DETAIL "A" DETAIL "A" P011P6/E TO-263 (D2PAK) MECHANICAL DATA

TAPE AND REEL SHIPMENT (suffix ”T4”)* TUBE SHIPMENT (no suffix)* D 2PAK FOOTPRINT * on sales type DIM. mm inch MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY 1000 1000 REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 TAPE MECHANICAL DATA

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