STP6NB25

STP6NB25 STMICROELECTRONICS | Alldatasheet

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Technical content

N-CHANNEL 250V - 0.9Ω - 6A TO-220/TO-220FP PowerMesh  MOSFET n TYPICAL R DS (on) = 0.9Ω n EXTREMELY HIGH dv/dt CAPABILITY n 100% AVALANCHE TESTED n VERY LOW INTRINSIC CAPACITANCES n GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termi- nation structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics.

APPLICATIONS

n HIGH CURRENT, HIGH SPEED SWITCHING n UNINTERRUPTIBLE POWER SUPPLY (UPS) n DC-DC & DC-AC CONVERTERS FOR TELECOM , INDUSTRIAL AND CONSUMER ENVIRONMENT ABSOLUTE MAXIMUM RATINGS (•)Pulse width limited by safe operating area TYPE V DSS R DS(on) ID STP6NB25 250 V < 1.1 Ω 6A STP6NB25FP 250 V < 1.1 Ω 3.7 A Symbol Parameter Value Unit STP6NB25 STP6NB25FP VDS Drain-source Voltage (VGS =0 ) 250 V VDGR Drain-gate Voltage (RGS =2 0kΩ ) 250 V VGS Gate- source Voltage ±30 V ID Drain Current (continuos) at TC =2 5°C 6 3.7 A ID Drain Current (continuos) at TC = 100°C 3.8 2.3 A IDM (l ) Drain Current (pulsed) 24 24 A PTOT Total Dissipation at TC =2 5°C 75 30 W Derating Factor 0.6 0.24 W/ °C dv/dt (1) Peak Diode Recovery voltage slope 5.5 V/ns VISO Insulation Withstand Voltage (DC) - 2000 Tstg Storage Temperature –60 to 150 °C Tj Max. Operating Junction Temperature 150 °C (1)ISD ≤6A, di/dt≤100A/µs, VDD ≤ V(BR)DSS ,Tj≤ TJMAX. INTERNAL SCHEMATIC DIAGRAM TO-220 TO-220FP

ELECTRICAL CHARACTERISTICS (TCASE = 25°C UNLESS OTHERWISE SPECIFIED) OFF ON (1) DYNAMIC TO-220 TO-220FP Rthj-case Thermal Resistance Junction-case Max 1.66 4.17 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Rthc-sink Thermal Resistance Case-sink Typ 0.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tjmax) 6A EAS Single Pulse Avalanche Energy (starting Tj=2 5°C, ID =IAR ,V DD =5 0V ) 200 mJ Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250µA, VGS =0 600 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125°C 50 µA IGSS Gate-body Leakage Current (VDS =0 ) VGS = ±30V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS =V GS ,ID = 250µA 234V R DS(on) Static Drain-source On Resistance VGS = 10V, ID =3 A 0.9 1.1 Ω ID(on) On State Drain Current VDS >ID(on)xR DS(on)max, VGS =1 0 V 6A Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs(1) Forward Transconductance VDS >ID(on)xR DS(on)max, ID =3 A 3S C iss Input Capacitance VDS = 25V, f = 1 MHz, VGS =0 260 pF C oss Output Capacitance 68 pF C rss Reverse Transfer Capacitance 9p F

ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time Rise Time VDD = 125 V, ID =3A R G = 4.7Ω VGS =1 0V (see test circuit, Figure 3) 9n s tr 9n s Q g Total Gate Charge VDD = 200V, ID =6A , VGS = 10V 12 17 nC Q gs Gate-Source Charge 7.5 nC Q gd Gate-Drain Charge 3 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) Off-voltage Rise Time VDD = 200V, ID =6A , R G =4 . 7Ω, VGS = 10V (see test circuit, Figure 5) 8n s tf Fall Time 7 ns tc Cross-over Time 15 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 6 A ISDM (2) Source-drain Current (pulsed) 24 A VSD (1) Forward On Voltage ISD = 6 A, VGS =0 1.6 V trr Reverse Recovery Time ISD = 6 A, di/dt = 100A/µs, VDD = 100V, Tj= 150°C (see test circuit, Figure 5) 160 ns Q rr Reverse Recovery Charge 720 µC IRRM Reverse Recovery Current 9 A Safe Operating Area for TO-220 Safe Operating Area for TO-220FP

Thermal Impedence for TO-220 Output Characteristics Transconductance Transfer Characteristics Static Drain-source On Resistance Thermal Impedence for TO-220FP

Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Gate Threshold Voltage vs Temp. Gate Charge vs Gate-source Voltage

Fig. 5:Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4:Gate Charge test Circuit Fig. 2:Unclamped Inductive WaveformFig. 1:Unclamped Inductive Load Test Circuit Fig. 3:Switching Times Test Circuit For Resistive Load

DIM. mm inch A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 A C D E F G Dia. TO-220 MECHANICAL DATA P011C

DIM. mm inch A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 A B D E H G F 123 TO-220FP MECHANICAL DATA

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