STP6N120K3 STMICROELECTRONICS | Alldatasheet
Document overview
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- PDF pages: 17
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package mechanical data
- 5 Revision history
Features
■ 100% avalanche tested ■ Extremely large avalanche performance ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Zener-protected
Applications
■ Switching applications
Description
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. Figure 1. Internal schematic diagram Table 1. Device summary
1 Electrical ratings
Table 2. Absolute maximum ratings
- Pulse width limited by safe operating area
Table 3. Thermal data
2 Electrical characteristics
Table 4. On / off states Table 5. Dynamic
- C oss eq. time related is defined as a constant equival ent capacitance giving the same charging time as
Coss when VDS increases from 0 to 80% VDSS.
- C oss eq. energy related is defined as a constant equi valent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS.
integrity. These integrated Zener diodes thus avoid the usage of external components. Table 6. Switching times on/off Table 7. Source drain diode
- Pulse width limited by safe operating area.
- Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 8. Gate-source Zener diode
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-3PF Figure 3. Thermal impedance for TO-3PF Figure 4. Safe operating area for TO-220 Figure 5. Thermal impedance for TO-220 Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247
Figure 8. Output characteristics Figure 9. Transfer characteristics Figure 10. Normalized BV DSS vs temperature Figure 11. Static drain-source on-resistance Figure 12. Output capacitance stored energy Figure 13. Capacitance variations
2.6 VGS=10V
Figure 14. Gate charge vs gate-source voltage Figure 15. Normalized on-resistance vs Figure 16. Normalized gate threshold voltage Figure 17. Maximum avalanche energy vs Figure 18. Source-drain diode forward
2.5 VGS=10V
3 Test circuits
Figure 19. Switching times test circuit for Figure 20. Gate charge test circuit Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform
4 Package mechanical data
Table 9. TO-3PF mechanical data
Figure 25. TO-3PF drawing
Table 10. TO-220 type A mechanical data
Figure 26. TO-220 type A drawing
Table 11. TO-247 mechanical data
Figure 27. TO-247 drawing
5 Revision history
Table 12. Document revision history 15-Apr-2009 1 First release. 02-Aug-2010 2 Document status promoted from preliminary data to datasheet. Inserted Section 2.1: Electrical characteristics (curves). gate-source voltage have been corrected.