STP65N045M9 STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: STMICROELECTRONICS
- PDF pages: 12
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 TO-220 type A package information
Features
Order code VDS RDS(on) max. ID STP65N045M9 650 V 45 mΩ 55 A
- Worldwide best FOM R DS(on)*Qg among silicon-based devices
- Higher V DSS rating
- Higher dv/dt capability
- Excellent switching performance
- Easy to drive
- 100% avalanche tested
Applications
- High efficiency switching applications
Description
This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency. Product status link STP65N045M9 Product summary Order code STP65N045M9 Marking 65N045M9 Package TO-220 Packing Tube N-channel 650 V, 39 mΩ typ., 55 A MDmesh M9 Power MOSFET in a TO-220 package STP65N045M9 Datasheet DS13506 - Rev 4 - May 2022 For further information contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Referred to TO-247 package.
- Pulse width is limited by safe operating area.
Table 2. Thermal data Table 3. Avalanche characteristics
2 Electrical characteristics
TC = 25 °C unless otherwise specified. Table 4. On-/off-states
- Specified by design, not tested in production.
Table 5. Dynamic
- C oss eq. is a constant equivalent capacitance that provides the same charging time as Coss while VDS is rising from 0 V to
Table 6. Switching times
Electrical characteristics
Table 7. Source-drain diode
- Limited by maximum junction temperature.
- Pulse width is limited by safe operating area.
- Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Maximum transient thermal impedance Figure 3. Typical output characteristics Figure 4. Typical transfer characteristics Figure 5. Typical gate charge characteristics Figure 6. Typical drain-source on-resistance
3 Test circuits
Figure 13. Unclamped inductive load test circuit Figure 14. Unclamped inductive waveform Figure 15. Test circuit for gate charge behavior Figure 16. Test circuit for inductive load switching and Figure 17. Turn-off switching time waveform Figure 18. Turn-on switching time waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
4.1 TO-220 type A package information
Figure 19. TO-220 type A package outline
Package information
Table 8. TO-220 type A package mechanical data
Revision history
Table 9. Document revision history 24-Feb-2021 1 First release. Updated title, Features and Description on cover page. Updated Section 1 Electrical ratings. Updated Section 2 Electrical characteristics. Added Section 2.1 Electrical characteristics (curves). Updated Section 3 Test circuits. Updated Table 1. Absolute maximum ratings. 25-May-2022 4 Updated Features on cover page.
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