STB60NF06L STMICROELECTRONICS | Alldatasheet

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Technical content

N-CHANNEL 60V - 0.012 Ω - 60A TO-220/TO-220FP/D2PAK STripFET™ II POWER MOSFET ■ TYPICAL R DS (on) = 0.012Ω ■ EXCEPTIONAL dv/dt CAPABILITY ■ 100% AVALANCHE TESTED ■ APPLICATION ORIENTED CHARACTERIZATION ■ 175 oC OPERATING RANGE ■ LOW THRESHOLD DRIVE ■ SURFACE-MOUNTING D 2PAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4”)

DESCRIPTION

This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high- efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.

APPLICATIONS

■ HIGH-EFFICIENCY DC-DC CONVERTERS ■ AUTOMOTIVE TYPE VDSS R DS(on) ID STB60NF06L STP60NF06L STP60NF06LFP 60 V 60 V 60 V <0.014 Ω <0.014 Ω <0.014 Ω 60 A 60 A

60 A(*)

(Suffix “T4”) ABSOLUTE MAXIMUM RATINGS (•) Pulse width limited by safe operating area. (*) Refer to SOA for the max allowable current values on FP-type due to Rth value (1) ISD ≤ 60A, di/dt ≤ 600A/µs, VDD ≤ 48V, Tj ≤ TJMAX. (2) Starting Tj = 25 oC, ID = 30A, VDD = 30V Symbol Parameter Value Unit STB60NF06L STP60NF06L STP60NF06LFP VDS Drain-source Voltage (VGS = 0) 60 V VDGR Drain-gate Voltage (RGS = 20 kΩ ) 60 V VGS Gate- source Voltage ± 15 V ID Drain Current (continuous) at TC = 25°C 60 60(*) A ID Drain Current (continuous) at TC = 100°C 42 42(*) A IDM (•) Drain Current (pulsed) 240 240(*) A Ptot Total Dissipation at TC = 25°C 110 30 W Derating Factor 0.73 0.2 W/°C dv/dt (1) Peak Diode Recovery voltage slope 20 V/ns EAS (2) Single Pulse Avalanche Energy 320 mJ Tstg Storage Temperature -55 to 175 °CTj Operating Junction Temperature INTERNAL SCHEMATIC DIAGRAM

(#)Only for SMD, When Mounted on 1 inch2 FR-4 board, 2 oz of Cu. ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF ON (1) DYNAMIC D 2PAK TO-220 TO-220FP Rthj-case Thermal Resistance Junction-case Max 1.36 5.0 °C/W Rthj-amb Rthj-pcb Tl Thermal Resistance Junction-ambient Thermal Resistance Junction-pcb(#) Maximum Lead Temperature For Soldering Purpose Max Max 62.5 300 °C/W °C/W Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 60 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 15V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS I D = 250 µA 1V R DS(on) Static Drain-source On Resistance VGS = 5 V I D = 30 A VGS = 10 V I D = 30 A 0.014 0.012 0.016 0.014 Ω Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (*) Forward Transconductance VDS = 15 V I D =3 0 A 20 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25V, f = 1 MHz, VGS = 0 2000 360 125 pF pF pF

(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 30 V I D = 30 A R G = 4.7 Ω V GS = 4.5 V (Resistive Load, Figure 3) 220 ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 48 V ID = 60 A VGS = 4.5V 35 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit t d(off) tf Turn-off Delay Time Fall Time VDD = 30V I D = 30 A R G = 4.7Ω, V GS = 4.5 V (Resistive Load, Figure 3) ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 240 A A VSD (*) Forward On Voltage ISD = 60A V GS = 0 1.3 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 60 A di/dt = 100A/µs VDD = 30 V T j = 150°C (see test circuit, Figure 5) 110 250 4.5 ns nC A ELECTRICAL CHARACTERISTICS (continued) Safe Operating Area Safe Operating Area for TO-220FP

Thermal Impedance Thermal Impedance for TO-220FP Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage Temperature

Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times

DIM. mm. inch. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.028 0.037 B2 1.14 1.7 0.045 0.067 C 0.45 0.6 0.018 0.024 C2 1.21 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 D1 8 0.315 E 10 10.4 0.394 0.409 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.591 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.069 M 2.4 3.2 0.094 0.126 R 0.4 0.015 V2 0° 8° 0° 8° D 2PAK MECHANICAL DATA

DIM. mm inch A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 A B D E H G ¯ F 123F2 TO-220FP MECHANICAL DATA

DIM. mm. inch. A 4.4 4.6 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.40 2.70 0.094 0.106 H2 10 10.40 0.393 0.409 L2 16.40 0.645 L3 28.90 1.137 L4 13 14 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.260 L9 3.50 3.93 0.137 0.154 DIA 3.75 3.85 0.147 0.151 TO-220 MECHANICAL DATA

DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0075 0.082 R5 0 1 . 5 7 4 W 23.7 24.3 0.933 0.956 DIM. mm inch MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0.795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY 1000 1000 REEL MECHANICAL DATA * on sales type TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* D 2PAK FOOTPRINT TAPE MECHANICAL DATA

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