STP60NE10 STMICROELECTRONICS | Alldatasheet

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Technical content

N - CHANNEL 100V - 0.016Ω - 60A TO-220/TO-220FP STripFET POWER MOSFET n TYPICAL RDS(on) = 0.016Ω n EXCEPTIONAL dv/dt CAPABILITY n 100% AVALANCHE TESTED n APPLICATION ORIENTED CHARACTERIZATION

DESCRIPTION

This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size ” strip-based process. The resulting transi- stor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a re- markable manufacturing reproducibility.

APPLICATIONS

n SOLENOID AND RELAY DRIVERS n MOTOR CONTROL, AUDIO AMPLIFIERS n DC-DC CONVERTERS n AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP60NE10 STP60NE10FP V DS Drain-source Voltage (VGS = 0) 100 V V DGR Drain- gate Voltage (RGS =2 0k Ω ) 100 V V GS Gate-source Voltage ± 20 V ID Drain Current (continuous) at Tc =2 5 oC6 0 3 0 A ID Drain Current (continuous) at Tc =1 0 0oC4 2 2 1 A IDM (•) Drain Current (pulsed) 240 120 A P tot Total Dissipation at Tc =2 5 oC 160 50 W Derating Factor 1.06 0.37 W/ o C V ISO Insulation Withstand Voltage (DC)  2000 V dv/dt Peak Diode Recovery voltage slope 7 V/ns Tstg Storage Temperature -65 to 175 o C Tj Max. Operating Junction Temperature 175 o C (•) Pulse width limited by safe operating area ( 1)ISD ≤ 60 A, di/dt≤ 300 A/µs, VDD ≤ V(BR)DSS ,Tj≤ TJMA X TYPE V DSS R DS(on) ID STP60NE10 STP60NE10FP 100 V 100 V <0 . 0 2 2Ω <0 . 0 2 2Ω 60 A 30 A May 1999 TO-220 TO-220FP 1 2

R thj-case Thermal Resistance Junction-case Max 0.94 2.7 oC/W R thj-amb R thc-sink T l Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 62.5 0.5 300 oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 60 A E AS Single Pulse Avalanche Energy (starting Tj =2 5 oC, ID =I AR ,V DD =3 5 V ) 100 mJ ELECTRICAL CHARACTERISTICS (Tcase =2 5oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage ID =2 5 0µ AV GS = 0 100 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) V DS =M a xR a t i n g V DS =M a xR a t i n g T c = 125 oC µ A µ A IGSS Gate-body Leakage Current (VDS =0 ) V GS = ± 20 V ± 100 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(th) Gate Threshold Voltage VDS =V GS ID = 250 µ A 234V R DS(on) Static Drain-source On Resistance V GS =1 0 V ID = 30 A 0.016 0.022 Ω ID(on) On State Drain Current VDS >I D(on) xR DS(on )max V GS =1 0V 60 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗)F o r w a r d Transconductance V DS >I D(on) xR DS(on )max ID =18 A 30 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =2 5V f=1M H z V GS = 0 5300 640 215 pF pF pF STP60NE10/FP

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time V DD =5 0V I D =3 0A R G =4 . 7 Ω V GS =1 0V (Resistive Load, see fig. 3) 100 ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD =8 0V I D =6 0A V GS = 10 V 142 185 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time V DD =5 0V I D =3 0A R G =4 . 7 Ω V GS =1 0V (Resistive Load, see fig. 3) 160 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time V clamp =8 0V I D =6 0A R G = 4.7 Ω V GS =1 0V (Inductive Load, see fig. 5) ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 240 A A V SD (∗)F o r w a r d O n V o l t a g e ISD =6 0A V GS =0 1 . 5 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 60 A di/dt = 100 A/ µ s V DD =5 0V T j =1 5 0oC (see test circuit, fig. 5) 170 1.02 ns µ C A (∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area for TO-220 Safe Operating Area for TO-220FP STP60NE10/FP

Thermal Impedance for TO-220 Output Characteristics Transconductance Thermal Impedance forTO-220FP Transfer Characteristics Static Drain-source On Resistance STP60NE10/FP

Gate Charge vs Gate-sourceVoltage Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Capacitance Variations Normalized On Resistance vs Temperature STP60NE10/FP

Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times STP60NE10/FP

DIM. mm inch A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 A C D E F G Dia. TO-220 MECHANICAL DATA P011C STP60NE10/FP

DIM. mm inch A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 A B D E H G F 123 TO-220FP MECHANICAL DATA STP60NE10/FP

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