STP60NE03L-12 STMICROELECTRONICS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

N - CHANNEL 30V - 0.009Ω - 60A - T0-220 STripFET POWER MOSFET n TYPICAL RDS(on) = 0.009Ω n AVALANCE RUGGED TECHNOLOGY n 100% AVALANCHE TESTED n REPETITIVE AVALANCHE DATA AT 100 oC n LOW GATE CHARGE n HIGH CURRENT CAPABILITY n 175 oC OPERATING TEMPERATURE n APPLICATION ORIENTED CHARACTERIZATION

DESCRIPTION

This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size ” strip-based process. The resulting transi- stor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a re- markable manufacturing reproducibility.

APPLICATIONS

n HIGH CURRENT, HIGH SPEED SWITCHING n SOLENOID AND RELAY DRIVERS n DC-DC & DC-AC CONVERTERS n AUTOMOTIVE ENVIRONMENT INTERNAL SCHEMATIC DIAGRAM February 1999 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (VGS =0 ) 3 0 V V DGR Drain- gate Voltage (RGS =2 0k Ω )3 0 V V GS Gate-source Voltage ± 20 V ID Drain Current (continuous) at Tc =2 5 oC6 0 A ID Drain Current (continuous) at Tc =1 0 0oC4 2 A IDM (•) Drain Current (pulsed) 240 A P tot Total Dissipation at Tc =2 5 oC 100 W Derating Factor 0.67 W/ o C dv/dt Peak Diode Recovery voltage slope 5.5 V/ns Tstg Storage Temperature -65 to 175 o C Tj Max. Operating Junction Temperature 175 o C (•) Pulse width limited by safe operating area ( 1)ISD ≤ 60 A, di/dt≤ 450 A/µs, VDD ≤ V(BR)DSS ,Tj≤ TJMA X TYPE V DSS R DS(on) ID STP60NE03L-12 30 V < 0.012 Ω 60 A TO-220

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 1.5 62.5 0.5 300 oC/W oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 60 A E AS Single Pulse Avalanche Energy (starting Tj =2 5 oC, ID =I AR ,V DD =1 5V ) 250 mJ ELECTRICAL CHARACTERISTICS (Tcase =2 5oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage ID =2 5 0µ AV GS =0 3 0 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) V DS =M a xR a t i n g V DS =M a xR a t i n g T c = 125 oC µ A µ A IGSS Gate-body Leakage Current (VDS =0 ) V GS = ± 20 V ± 100 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(th) Gate Threshold Voltage VDS =V GS ID = 250 µ A1 1 . 7 2 . 5 V R DS(on) Static Drain-source On Resistance V GS =1 0 V ID =3 0A V GS =5 V I D =3 0A 0.009 0.012 0.018 Ω ID(on) On State Drain Current VDS >I D(on) xR DS(on )max V GS =1 0V 60 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗)F o r w a r d Transconductance V DS >I D(on) xR DS(on )max ID =30 A 20 30 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =2 5V f=1M H z V GS = 0 2200 570 200 pF pF pF STP60NE03L-12

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time V DD =1 5V I D =3 0A R G =4 . 7 Ω V GS =5V (Resistive Load, see fig. 3) 260 ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD =2 4V I D =6 0A V GS =5V 3 5 45 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time V DD =1 5V I D =3 0A R G =4 . 7 Ω V GS =5V (Resistive Load, see fig. 3) ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time V DD =2 4V I D =6 0A R G =4 . 7 Ω V GS =1 5V (Inductive Load, see fig. 5) 120 175 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 240 A A V SD (∗)F o r w a r d O n V o l t a g e ISD =6 0A V GS =0 1 . 5 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 60 A di/dt = 100 A/ µ s V DD =1 5V T j =1 5 0oC (see test circuit, fig. 5) 0.1 3.5 ns µ C A (∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance STP60NE03L-12

Gate Charge vs Gate-sourceVoltage Transfer Characteristics Static Drain-source On Resistance Capacitance Variations STP60NE03L-12

Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature STP60NE03L-12

Fig. 1:Unclamped Inductive Load Test Circuit Fig. 3:Switching Times Test Circuits For Resistive Load Fig. 2:Unclamped Inductive Waveform Fig. 4:Gate Charge test Circuit Fig. 5:Test Circuit For Inductive Load Switching And Diode Recovery Times STP60NE03L-12

DIM. mm inch A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 A C D E F G Dia. TO-220 MECHANICAL DATA P011C STP60NE03L-12

Information furnished is believed to be accurate and reliable. However, STMicroelect ronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics  1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com STP60NE03L-12