STP60N06FI

STP60N06 STMICROELECTRONICS | Alldatasheet

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ff MICROELECTRONICS STP60NO6FI N - CHANNEL ENHANCEMENT MODE STP6ON06 60 V < 0.02 2 60A STP6ONO6FI 60V | <0.022) 32A ay = TYPICAL Ros(on) = 0.017 2 Cx > Ye 2 » AVALANCHE RUGGED TECHNOLOGY - = 100% AVALANCHE TESTED X » REPETITIVE AVALANCHE DATA AT 100°C NX » LOW GATE CHARGE 2° » > » HIGH CURRENT CAPABILITY 1 1 = 175°C OPERATING TEMPERATURE = VERY LOW Rosoon) - = APPLICATION ORIENTED 70-220 'SOWATT220 CHARACTERIZATION APPLICATIONS 7 » HIGH CURRENT, HIGH SPEED SWITCHING » SOLENOID AND RELAY DRIVERS INTERNAL SCHEMATIC DIAGRAM » REGULATORS > (2) » DC-DC & DC-AC CONVERTERS » MOTOR CONTROL, AUDIO AMPLIFIERS » AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) om 5 (3) ABSOLUTE MAXIMUM RATINGS [Vos _Drain-souree Voltage Vas- | CdS Cd [Woon Drain: gate Votage (Ros 20K) «dT SSCS SC~C‘C~drSC‘VC~=*' [to Drain Current (continuous) atTa= 25° | 0 —*i| 2 | A _| [Vico Insulation withstand Vottage (0G) «| | _2000__~| _v _| (+) Pulse width limited by safe operating area May 1993 1/10

Rthj-case | Thermal Resistance Junction-case Max Rthj-amb | Thermal Resistance Junction-ambient Max 62.5 °c/w Riho-sink |Thermal Resistance Case-sink Typ 0.5 °C/W Ti Maximum Lead Temperature For Soldering Purpose 300 °c AVALANCHE CHARACTERISTICS lan Avalanche Current, Repetitive or Not-Repetitive A (pulse width limited by T; max, 6 < 1%) Eas Single Pulse Avalanche Energy mJ (starting Tj = 25 °C, Ip = Ian, Von = 25 V) Ear Repetitive Avalanche Energy 150 mJ (pulse width limited by T; max, 6 < 1%) lan Avalanche Current, Repetitive or Not-Repetitive 42 A (Tc = 100 °C, pulse width limited by Tj max, 8 < 1%) ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions | min. | Typ. | Max. | unit | VUsryoss |Drain-source Ip= 250A Vos=0 Vv Breakdown Voltage loss Zero Gate Voltage Vos = Max Rating 250 pA Drain Current (Vas = 0) Vos = Max Rating x 0.8 To= 125°C 1000 HA lass Gate-body Leakage Ves =+20V +100 nA Current (Vos = 0) ON (*) Symbol Parameter Test Conditions | min. | Typ. | Max. | Unit | Vasith) Gate Threshold Voltage Vos = Vas Ip = 250 pA | 2 [209] 4i]v | Ros(on) Static Drain-source On Vas=10V In=30A 0.017 | 0.02 Q Resistance Vaes=10V Ip=30A Te = 100°C 0.04 Q Ip(on) |On State Drain Current Vos > Ip(on) X Ros(on)max A Vas=10V DYNAMIC Symbol Parameter Test Conditions | min. | Typ. | Max. | unit | Qts (*) | Forward Vos > Ip(on) X Ros(on)max Ipb=30A 16 29 Transconductance Ciss | Input Capacitance Vos=25V f=1MHz Ves=0 2200 | 2900 | pF Coss Output Capacitance 950 1300 pF Criss Reverse Transfer 250 | 350 pF Capacitance a ff 868-THOMSON T wacroeuzcrronics

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions | min. | Typ. | Max. | unit | tajon) Turn-on Time Voo=40V Ip=60A 65 90 t Rise Time Re = 502 Vas = 10 V 500 700 (see test circuit, figure 3) (di/dt)on | Turn-on Current Slope Voo=40V Ip=60A 185 A/us Re = 502 Ves = 10 V (see test circuit, figure 5) Qq Total Gate Charge Von =40V Ip=60A Vos=10V 68 nc Qgs Gate-Source Charge 15 nc Qga | Gate-Drain Charge 27 nc SWITCHING OFF Symbol Parameter Test Conditions | min. | Typ. | Max. | unit | trivotly) | Off-voltage Rise Time Voo=40V Ip=60A 160 | 220 tr Fall Time Re= 502 Ves =10V 190 | 270 te Cross-over Time (see test circuit, figure 5) 370 520 SOURCE DRAIN DIODE Symbol Parameter Test Conditions | min. | Typ. | Max. | unit | Iso | Source-drain Current 60 A Isom(®) | Source-drain Current 240 A (pulsed) Vso (#) [Forward On Voltage [Iso = 60A Vas = 0 ee ee ter Reverse Recovery Isp = 60 A di/dt = 100 A/us 120 ns Time Voo=25V T= 150°C Qn Reverse Recovery (see test circuit, figure 5) 0.27 uc Charge Inam | Reverse Recovery 45 A Current (#) Pulsed: Pulse duration = 300 us, duty cycle 1.5% (+) Pulse width limited by safe operating area Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220 py ere rE rere TE SSe7e79 (0) Sao AE ae ae EEE aa a SSS 1 Ces OE Tt 10% be SE Nios ( 1042 $C S| = 1 00us FA Dl ART NST a fi NNT ili il ate COHS ETT 2 ims TATOOS ns vo A TIN Toms Ll vo AUT ENN S7FH0.. oPckarion PSMA oo, ZA ip toms iy ‘ Si ms NOME 1 coms Ht cot ono A se iN wo CTE TE ieee Sl Se VV ASCO ooo CET TUTE TE TT oe) |

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Thermal Impedance For TO-220 Thermal Impedance For ISOWATT220 Savi milieu | Festa tl RB ia Palisa coos ln ==> i Vf A TT Fe ieee oo pall ass | eae PATI Soon) fon. Bore [o.oz I tH Ze = K Rime 2 (| since purse ||| 85 tp/r See TOU TT 8 = t2/r 10° Ease TL. patel Siti ail

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r| [L-| I EE 10"? vo LT MT Derating Curve For TO-220 Derating Curve For ISOWATT220 Pt TTT TTT TTT TTT Pros WY | ot fot no fe fe] in eno GT eS N EH “EEONCECEEEEEE Pry TON TTT ye ey ey Ree NGS i SOF EE] of NLT eon soL Pt TEN EET 20 HT N N THEREIN © TEESE PELE i SEEEEEEEEEERIEA SORE pType ey NTT HOSEL LITT TTT ity tt Pin tT | COO 0 50 100 150Teaae (°C) o 50 100 150 Toose( °C) Output Characteristics Transfer Characteristics ) Coe | vo ee veoh LCCC T 4S PTT yy tt Avy yt al SRR ett TTT tT yt TT Ty Foe PTT TT Tie ty ty a ae soit} tt i7Ty tT ET ov ERR see olf | TT TTT TTT ott ttl” | tT | [Ree Pett tyr ty ; ml ev] sRReeeeeeeee Pty TAT Ty yy Pr EEE ARE EEe Q 5 10 18 20 25 Vps(V) ° 2 4 6 B 10 Vog(V) 4/10 OMSON oS

Transconductance Static Drain-source On Resistance

9027720 Roster) 6627730

“Test ETA L | [A rd Vog=10V . ep a, fe} | Py » 2) Pan Bee Votre} ERE Pee EEE 9 20 40 60 Ip(A) "3 20 40 60 80 Ip(A) Gate Charge vs Gate-source Voltage Capacitance Variations vs (TTTITTI1II# | TT TTT TITTLI I a s000 PEA eee A Sennen 4a A es=0 LEH ATH wo EH l (oe soot LEE CYL Te a ACE sooo) (SS ft [sea t ] IKE ET VET ttt ttt] SEE EEE Cm 0 16 32 48 64 80 Q,(nc) Oo 10 20 30 40 50 Vos (v) Normalized Gate Threshold Voltage vs Normalized On Resistance vs Temperature Temperature Vesti) iam Rosie, COTO] mmr) TPT) | eH att fies HAHDEIEIAAE ERLE Po | “EERE oh PSK ETE HEEL EHH TNE 7) HEEEUEEEEUUES7CO0EE Se NGI Gllie HS sebseueee ceenaazaey IN 1.0 Fee vee 0.6 ics=10V PEPER EEE Hee iesson os_LEL TT TT TT os LELEE EEE EE yy 868, THOMSON SO

Turn-on Current Slope Turn-off Drain-source Voltage Slope ai /at cc27920 dv/at ox74s0 C7) wey fT [TT ty tt Ty sol LLL Sem aaov vol Frac AC veto Nee ERNE PAT Ty yt tt wot | | NET Ty oN PtP ING ERNE [~™ sett i | ttt | LTE TTT TT iT | 0 40 BO 86120160 Rg (2) () 40 80 120 160 Rg(M) Cross-over Time Switching Safe Operating Area , oz7reu0 crest te (ns) RRR w@ETTTTT TTT TTT TTT Ty oso Lee 7 7 2 600 || | | aol TTT TT TT tty yt ty Yt [| | FT SERRE 500 41 yeoot TT TT TT Tr 400 1201} rgeson LEE f\\ = “wanes i ala T aed ot _t | | [tT | EEE EEE EEE 0 20 40 60 8 100 120 Rg(n) 0 10 20 30 40 SQ 60 Vps(V) Accidental Overload Area Source-drain Diode Forward Characteristics oo Vel) a Ip (A) * 50 PEE yyy MrT TT TTT Ey] SSeS ee ee wo ttt pt er “TL eae LT TT yee ttt yyy ey | aol FETE a | tT we EEE Ve=aaeoaee wolLly cisore CECE oleae Le | a res8e% | Jes amass | | | wf fr 4p anneene LETT TT 0.6 4 ae eee ATi ti tt Gee eee we LTT TTT | 0 10 20 30 40 50 60 Vps(V¥) 0 20 40 60 BO Isp (A)

Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms Vigryoss ‘ Vp — Yo 2200 | 3,3 BF uF Yoo tow ' A . Ip” _ Yoo “ A Yoo y k — \\ LI ¢ Lae Po scosses se00870 Fig. 3: Switching Times Test Circuits For Fig. 4: Gate Charge Test Circuit Resistive Load oY o> 12v, ll 47K | 1Ka 100nF RL 2200 33 BF we Yoo — Vo V)=20V=Veus, '@ CONST 1002 wa, Vea IT. % T - 47K0 = IL en 7 | 1Ke wt L seein Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time A A Ok 2 wos eM ROO BAT L=100 Soy 5 hia eis 20 D ” . Yoo 6 out. + Re 3 = eso ‘7 jaicroeucrromics

i ChChC TO-220 MECHANICAL DATA ee ee ee eee a 2 a OS Poo eo reo oto Poon ter oso Poe Tot toro ot oe Poe ost ose one Ye 7 pore te 0 ota 007 pos | aos tts Toto Pt a YY AY ST Poe too PT t0.40 Ee ee Poe tee ets pos | to to ost Ps poss ts tog ots poe tes Pt ooo Tz pour se Tw zee zc pos Pts toot tg Low | ars Tze stam ts w of CTE E a c eo : = + || us Le uz Le PO11C i ‘7 jaicroeucrromics

Eieeiiiiiier vesiaei ieiaaiaei ‘ISOWATT220 MECHANICAL DATA eee ee ee Poa ee is ota tet poe | as Ter os tcs poo fs Tks ops otce a a Poor ors tos 0 es a De OD Pos | aes Tse Totes toe RS 2 es poe ft wo es Poe To to ses oa a Poo Fos fT se Tote ote w rr 2 a Ls Le lz 2 | | 123 | 2 LA PO11G ‘7 jaicroeucrromics

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied SGS-THOMSON Microelectronics products are not authorizedior use as critical components in life supportdevices or systems without express written approval of SGS- THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES ‘Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden- Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ‘7 jaicroeucrromics