Datasheet - STP60N043DM9 - N-channel 600 V, 38 mΩ typ., 55 A MDmesh DM9 Power MOSFET in a TO-220 package
Document overview
- Manufacturer or author: STMICROELECTRONICS
- PDF pages: 12
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 TO-220 type A package information
Features
Order code VDS RDS(on) max. ID STP60N043DM9 600 V 43 mΩ 55 A
- Fast-recovery body diode
- Worldwide best RDS(on) per area among silicon-based fast recovery devices
- Low gate charge, input capacitance and resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
Applications
- Power supplies and converters
- LLC resonant converter
Description
This N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode. The silicon-based DM9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The fast-recovery diode featuring very low recovery charge (Qrr), time (trr) and RDS(on) makes this fast-switching super-junction Power MOSFET tailored for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. 1 2 3 TO-220 TAB AM01475v1_noZen D(2, TAB) G(1) S(3) Product status link STP60N043DM9 Product summary Order code STP60N043DM9 Marking 60N043DM9 Package TO-220 Packing Tube N-channel 600 V, 38 mΩ typ., 55 A MDmesh DM9 Power MOSFET in a TO-220 package STP60N043DM9 Datasheet DS13931 - Rev 5 - March 2024 For further information contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Referred to TO-247 long leads package.
- Pulse width limited by safe operating area.
Table 2. Thermal data Table 3. Avalanche characteristics
2 Electrical characteristics
TC = 25 °C unless otherwise specified. Table 4. On/off-states
- Specified by design, not tested in production.
Table 5. Dynamic characteristics
- Coss eq is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
Table 6. Switching times Figure 18. Switching time waveform)
Electrical characteristics
Table 7. Source-drain diode
- Referred to TO-247 long leads package.
- Pulse width is limited by safe operating area.
- Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Maximum transient thermal impedance Figure 3. Typical output characteristics Figure 4. Typical transfer characteristics Figure 5. Typical gate charge characteristics Figure 6. Typical drain-source on-resistance
3 Test circuits
Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior Figure 15. Test circuit for inductive load switching and Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
4.1 TO-220 type A package information
Figure 19. TO-220 type A package outline
Package information
Table 8. TO-220 type A package mechanical data
Revision history
Table 9. Document revision history 16-Feb-2022 1 First release. 06-Sep-2022 2 Updated Features on cover page. 16-Mar-2023 3 Updated Table 7. Source-drain diode. Updated title and Features on cover page. Updated Table 1. Absolute maximum ratings. Updated Table 6. Switching times. Updated Section 3 Test circuits. 21-Mar-2024 5 Updated Table 3. Avalanche characteristics.
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