STP5NK50Z

STB5NK50Z STMICROELECTRONICS | Alldatasheet

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Technical content

STP5NK50Z - STD5NK50Z - STD5NK50Z-1 N-CHANNEL500V-1.22 Ω -4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH™Power MOSFET ■ TYPICAL R DS (on) = 1.22Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100% AVALANCHE TESTED ■ GATE CHARGE MINIMIZED ■ VERY LOW INTRINSIC CAPACITANCES ■ VERY GOOD MANUFACTURING REPEATIBILITY

DESCRIPTION

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip- based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. Such series comple- ments ST full range of high voltage MOSFETs in- cluding revolutionary MDmesh™ products.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING ■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC ■ LIGHTING

ORDERING INFORMATION

TYPE V DSS R DS(on) ID Pw STP5NK50Z STP5NK50ZFP STD5NK50Z STD5NK50Z-1 STB5BK50Z-1 500 V 500 V 500 V 500 V 500 V < 1.5Ω < 1.5Ω < 1.5Ω < 1.5Ω < 1.5Ω 4.4 A 4.4 A 4.4 A 4.4 A 4.4 A 70 W 25 W 70 W 70 W 70 W SALES TYPE MARKING PACKAGE PACKAGING STP5NK50Z P5NK50Z TO-220 TUBE STP5NK50ZFP P5NK50ZFP TO-220FP TUBE STD5NK50ZT4 D5NK50Z DPAK TAPE & REEL STD5NK50Z-1 D5NK50Z IPAK TUBE STB5NK50Z-1 B5NK50Z I 2PAK TUBE TO-220 TO-220FP DPAK IPAK 1 2 3 I2PAK INTERNAL SCHEMATIC DIAGRAM

STP5NK50Z - STP5NK50ZFP - STD5NK50Z - STD5NK50Z-1 - STB5NK50Z-1 ABSOLUTE MAXIMUM RATINGS (/circle6 ) Pulse width limited by safe operating area (1) ISD ≤4.4A, di/dt≤200A/µs, VDD ≤ V(BR)DSS ,Tj≤ TJMAX. (*) Limited only by maximum temperature allowed THERMAL DATA AVALANCHE CHARACTERISTICS GATE-SOURCE ZENER DIODE PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost- effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Symbol Parameter Value Unit STP5NK50Z STB5NK50Z-1 STP5NK50ZFP STD5NK50Z STD5NK50Z-1 VDS Drain-source Voltage (VGS =0 ) 500 V VDGR Drain-gate Voltage (RGS =2 0kΩ ) 500 V VGS Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 4.4 4.4 (*) 4.4 A ID Drain Current (continuous) at TC = 100°C 2.7 2.7 (*) 2.7 A IDM (/circle6 ) Drain Current (pulsed) 17.6 17.6 (*) 17.6 A PTOT Total Dissipation at TC = 25°C 70 25 70 W Derating Factor 0.56 0.2 0.56 W/°C VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ) 3000 V dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns VISO Insulation Withstand Voltage (DC) - 2500 - V Tj Tstg Operating Junction Temperature Storage Temperature - 5 5t o1 5 0 - 5 5t o1 5 0 TO-220 I2PAK TO-220FP DPAK Rthj-case Thermal Resistance Junction-case Max 1.78 5 1.78 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tjmax) 4.4 A EAS Single Pulse Avalanche Energy (starting Tj= 25 °C, ID =IAR ,VDD =5 0V ) 130 mJ Symbol Parameter Test Conditions Min. Typ. Max. Unit BV GSO Gate-Source Breakdown Voltage Igs=± 1mA (Open Drain) 30 V

STP5NK50Z - STP5NK50ZFP - STD5NK50Z - STD5NK50Z-1 - STB5NK50Z-1 ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF DYNAMIC SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. C oss eq.is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS . Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID =1 mA, VGS = 0 500 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) VDS = Max Rating VDS = Max Rating, TC = 125 °C µA µA IGSS Gate-body Leakage Current (VDS =0 ) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS =V GS ,ID = 50µA 3 3.75 4.5 V R DS(on) Static Drain-source On Resistance VGS =1 0 V ,ID = 2.2 A 1.22 1.5 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs(1) Forward Transconductance V DS =15 V,ID = 2.2 A 3.1 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =2 5 V ,f=1M H z ,VGS = 0 535 pF pF pF C oss eq.(3) Equivalent Output Capacitance VGS =0 V ,VDS = 0V to 400V 45 pF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD =2 5 0V ,ID = 2.2 A R G = 4.7Ω VGS =1 0V (Resistive Load see, Figure 3) ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD =4 0 0 V ,ID = 4.4 A, VGS =1 0 V 28 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 250 V, ID = 2.2A R G =4 . 7Ω VGS =1 0V (Resistive Load see, Figure 3) ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time V DD = 400V, ID = 4.4A, R G =4 . 7Ω, VGS = 10V (Inductive Load see, Figure 5) ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) 4.4 17.6 A A VSD (1) Forward On Voltage ISD = 4.4 A, VGS =0 1.6 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD =4.4 A, di/dt = 100A/µs VDD =3 0 V ,Tj= 150°C (see test circuit, Figure 5) 310 1425 9.2 ns nC A

STP5NK50Z - STP5NK50ZFP - STD5NK50Z - STD5NK50Z-1 - STB5NK50Z-1 Safe Operating Area For TO-220/DPAK/IPAK/I2PAK Output Characteristics Thermal Impedance For TO-220/DPAK/IPAK/I2PAK Safe Operating Area For TO-220FP Thermal Impedance For TO-220FP Transfer Characteristics

STP5NK50Z - STP5NK50ZFP - STD5NK50Z - STD5NK50Z-1 - STB5NK50Z-1 Transconductance Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature Gate Charge vs Gate-source Voltage Capacitance Variations Static Drain-source On Resistance

STP5NK50Z - STP5NK50ZFP - STD5NK50Z - STD5NK50Z-1 - STB5NK50Z-1 Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature Maximum Avalanche Energy vs Temperature

STP5NK50Z - STP5NK50ZFP - STD5NK50Z - STD5NK50Z-1 - STB5NK50Z-1 Fig. 5:Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4:Gate Charge test Circuit Fig. 2:Unclamped Inductive WaveformFig. 1:Unclamped Inductive Load Test Circuit Fig. 3:Switching Times Test Circuit For Resistive Load

STP5NK50Z - STP5NK50ZFP - STD5NK50Z - STD5NK50Z-1 - STB5NK50Z-1 DIM. mm. inch A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 TO-220 MECHANICAL DATA

STP5NK50Z - STP5NK50ZFP - STD5NK50Z - STD5NK50Z-1 - STB5NK50Z-1 A B D E H G ¯ F 123F2 L4L5 DIM. mm. inch A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.5 0.045 0.067 F2 1.15 1.5 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 TO-220FP MECHANICAL DATA

STP5NK50Z - STP5NK50ZFP - STD5NK50Z - STD5NK50Z-1 - STB5NK50Z-1 DIM. mm inch A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0 o 8o 0o 0o P032P_B TO-252 (DPAK) MECHANICAL DATA

STP5NK50Z - STP5NK50ZFP - STD5NK50Z - STD5NK50Z-1 - STB5NK50Z-1 DIM. mm inch A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 0.033 B5 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A C H D LL2 1 3 = = B E G = = = = TO-251 (IPAK) MECHANICAL DATA 0068771-E

STP5NK50Z - STP5NK50ZFP - STD5NK50Z - STD5NK50Z-1 - STB5NK50Z-1 DIM. mm inch A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 E 10 10.4 0.393 0.409 L 13.1 13.6 0.515 0.531 L1 3.48 3.78 0.137 0.149 L2 1.27 1.4 0.050 0.055 L B D E A CA1 e P011P5/E TO-262 (I2PAK) MECHANICAL DATA

STP5NK50Z - STP5NK50ZFP - STD5NK50Z - STD5NK50Z-1 - STB5NK50Z-1 TAPE AND REEL SHIPMENT (suffix ”T4”)* TUBE SHIPMENT (no suffix)* DPAK FOOTPRINT * on sales type DIM. mm inch MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0.795 G 16.4 18.4 0.645 0.724 N 50 1.968 T 22.4 0.881 BASE QTY BULK QTY 2500 2500 REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 0.476 D 1.5 1.6 0.059 0.063 D1 1.5 0.059 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 1.574 W 15.7 16.3 0.618 0.641 TAPE MECHANICAL DATA All dimensions a r ei nm i l l i m e t e r sAll dimensions are in millimeters

STP5NK50Z - STP5NK50ZFP - STD5NK50Z - STD5NK50Z-1 - STB5NK50Z-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com