STP5NK100Z_09 STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 15
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuit
- 4 Package mechanical data
- 5 Revision history
Features
■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatibility
Applications
■ Switching application
Description
The new SuperMESH™ series of Power MOSFETS is the result of further design improvements on ST's well-established strip- based PowerMESH™ layout. In addition to significantly lower on-resistance, the device offers superior dv/dt capability to ensure optimal performance even in the most demanding applications. The SuperMESH™ devices further complement an already broad range of innovative high voltage MOSFETs, which includes the revolutionary MDmesh™ products. Figure 1. Internal schematic diagram Table 1. Device summary
1 Electrical ratings
Table 2. Absolute maximum ratings
- Limited only by maximu m temperature allowed
- Pulse width limited by safe operating area
Table 3. Thermal data Table 4. Avalanche characteristics
2 Electrical characteristics
Table 5. On/off states Table 6. Dynamic
- Pulsed: pulse duration=300 µs, duty cycle 1.5%
- C oss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
integrity. These integrated Zener diodes thus avoid the usage of external components. Table 7. Source drain diode
- Pulse width limited by safe operating area
- Pulsed: pulse duration=300 µs, duty cycle 1.5%
Table 8. Gate-source Zener diode
2.1 Electrical characterist ics (curves)
Figure 2. Safe operating area for TO-220FP Figure 3. Thermal impedance for TO-220FP Figure 4. Safe operating area for TO-220 Figure 5. Thermal impedance for TO-220 Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247
3 Test circuits
Figure 19. Unclamped inductive load test Figure 20. Unclamped inductive waveform Figure 21. Switching times test circuit for Figure 22. Gate charge test circuit Figure 23. Test circuit for inductive load
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
Dim. mm .xaM.pyT.niM 6.44.4A 7.25.2B 57.25.2D 7.054.0E 157.0F 07.151.11F 5.151.12F 2.559.4G 7.24.21G 4.0101H 612L 6.036.823L 6.018.94L 6.39.25L 4.619.516L 3.997L 2.33aiD 7012510_Rev_J A B H Dia D E L6 L5 F1 F2 F G TO-220FP mechanical data
A 4.40 4.60 0.17 3 0.181 b 0.61 0. 88 0.024 0.0 34 b1 1.14 1.70 0.044 0.066 c0 . 4 8 0.70 0.01 9 0.027 D 15.25 15.75 0.6 0.62 D1 1.27 0.050 E 10 10.40 0. 393 0.409 e 2.40 2.70 0.0 94 0.106 e1 4. 95 5.15 0.1 94 0.202 F1 . 2 3 1.32 0.04 8 0.051 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.0 94 0.107 L1 3 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L302 8.90 1.1 37 ∅P 3.75 3.85 0.147 0.151 Q2 . 6 5 2 . 95 0.104 0.116
Dim. mm. Min. Typ Max. A4 . 855 . 1 5 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c0 . 4 0 0 . 80 D1 9.85 20.15 E 15.45 15.75 e5 . 4 5 L 14.20 14. 80 L1 3.70 4. 30 L2 1 8.50 øP 3.55 3.65 øR 4.50 5.50 S 5.50 TO-247 Mechanical data
5 Revision history
Table 9. Document revision history