STP5NC70Z

STP5NC70Z STMICROELECTRONICS | Alldatasheet

Document overview

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Technical content

N-CHANNEL 700V - 1.8Ω - 4.6A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET ■ TYPICAL R DS (on) = 1.8Ω ■ EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES ■ 100% AVALANCHE TESTED ■ VERY LOW GATE INPUT RESISTANCE ■ GATE CHARGE MINIMIZED

DESCRIPTION

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to- back Zener diodes between gate and source. Such ar- rangement gives extra ESD capability with higher rug- gedness performance as requested by a large variety of single-switch applications.

APPLICATIONS

■ SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION ■ WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS (1)Pulse width limited by safe operating area TYPE V DSS R DS(on) ID STP5NC70Z/FP 700V < 2 Ω 4.6 A STB5NC70Z/-1 700V < 2 Ω 4.6 A Symbol Parameter Value Unit STP(B)5NC70Z(-1) STP5NC70ZFP VDS Drain-source Voltage (VGS =0 ) 700 V VDGR Drain-gate Voltage (RGS =2 0kΩ ) 700 V VGS Gate- source Voltage ± 25 V ID Drain Current (continuous) at TC = 25°C 4.6 4.6(*) A ID Drain Current (continuous) at TC = 100°C 2.9 2.9(*) A IDM (1) Drain Current (pulsed) 18.4 18.4 A PTOT Total Dissipation at TC = 25°C 100 35 W Derating Factor 0.8 0.32 W/°C IGS Gate-source Current ± 50 mA VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ) 3K V dv/dt Peak Diode Recovery voltage slope 3 V/ns VISO Insulation Winthstand Voltage (DC) -- 2000 V Tstg Storage Temperature –65 to 150 °C Tj Max. Operating Junction Temperature 150 °C (● )ISD ≤4.5A, di/dt≤100A/µs, VDD ≤ V(BR)DSS ,Tj≤ TJMAX (*).Limited only by maximum temperature allowed TO-220 TO-220FP 1 2 3 I²PAK (Tabless TO-220) D²PAK INTERNAL SCHEMATIC DIAGRAM

STP5NC70Z - STP5NC70ZFP - STB5NC70Z - STB5NC70Z-1 THERMAL DATA AVALANCHE CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF ON (1) DYNAMIC TO-220 / D²PAK I²PAK TO-220FP Rthj-case Thermal Resistance Junction-case Max 1.25 3.57 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tjmax) 4.6 A EAS Single Pulse Avalanche Energy (starting Tj= 25 °C, ID =IAR ,VDD =5 0V ) 200 mJ Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 700 V ΔBV DSS /ΔTJ Breakdown Voltage Temp. Coefficient ID =1m A ,VGS = 0 0.8 V/°C IDSS Zero Gate Voltage Drain Current (VGS =0 ) VDS = Max Rating 1µ A VDS = Max Rating, TC = 125 °C 50 µA IGSS Gate-body Leakage Current (VDS =0 ) VGS = ± 20V ±10 µA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS =V GS ,ID = 250µA 345V R DS(on) Static Drain-source On Resistance VGS =1 0 V ,ID = 2.4 A 1.8 2.0 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs(1) Forward Transconductance V DS >ID(on)xR DS(on)max, ID = 2.4A C iss Input Capacitance VDS =2 5 V ,f=1M H z ,VGS =0 1200 pF C oss Output Capacitance 98 pF C rss Reverse Transfer Capacitance 9p F

STP5NC70Z - STP5NC70ZFP - STB5NC70Z - STB5NC70Z-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE GATE-SOURCE ZENER DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. ΔVBV = α T( 2 5 ° - T )B VGSO (25°) PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD =3 5 0V ,ID = 2.5 A R G = 4.7Ω VGS =1 0 V (see test circuit, Figure 3) ns ns Q g Total Gate Charge VDD =5 6 0 V ,ID = 5A, VGS =1 0 V 27 36.4 nC Q gs Gate-Source Charge 8 nC Q gd Gate-Drain Charge 10 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) Off-voltage Rise Time VDD = 560V, ID =5A , R G =4 . 7Ω, VGS = 10V (see test circuit, Figure 5) 13 ns tf Fall Time 14 ns tc Cross-over Time 22 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 4.6 A ISDM (2) Source-drain Current (pulsed) 18.4 A VSD (1) Forward On Voltage ISD = 4.6 A, VGS =0 1.6 V trr Reverse Recovery Time ISD = 5 A, di/dt = 100A/µs, VDD = 100V, Tj= 150°C (see test circuit, Figure 5) 570 ns Q rr Reverse Recovery Charge 4.4 µC IRRM Reverse Recovery Current 15.5 A Symbol Parameter Test Conditions Min. Typ. Max. Unit BV GSO Gate-Source Breakdown Voltage Igs=± 1mA (Open Drain) 25 V α T Voltage Thermal Coefficient T=25°C Note(3) 1.3 10-4/°C Rz Dynamic Resistance ID =5 0m A ,VGS =0 90 Ω

STP5NC70Z - STP5NC70ZFP - STB5NC70Z - STB5NC70Z-1 Output Characteristics Safe Operating Area For TO-220FPSafe Operating Area For TO-220/D²PAK/I²PAK Thermal Impedance For TO-220/D²PAK/I²PAK Thermal Impedance For TO-220FP Transfer Characteristics

STP5NC70Z - STP5NC70ZFP - STB5NC70Z - STB5NC70Z-1 Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature Gate Charge vs Gate-source Voltage Capacitance Variations Static Drain-source On ResistanceTransconductance

STP5NC70Z - STP5NC70ZFP - STB5NC70Z - STB5NC70Z-1 Source-drain Diode Forward Characteristics

STP5NC70Z - STP5NC70ZFP - STB5NC70Z - STB5NC70Z-1 Fig. 5:Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4:Gate Charge test Circuit Fig. 2:Unclamped Inductive WaveformFig. 1:Unclamped Inductive Load Test Circuit Fig. 3:Switching Times Test Circuits For Resistive Load

STP5NC70Z - STP5NC70ZFP - STB5NC70Z - STB5NC70Z-1 DIM. mm inch A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 A C D E F G Dia. TO-220 MECHANICAL DATA P011C

STP5NC70Z - STP5NC70ZFP - STB5NC70Z - STB5NC70Z-1 DIM. mm inch A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 A B D E H G ¯ F 123F2 TO-220FP MECHANICAL DATA

STP5NC70Z - STP5NC70ZFP - STB5NC70Z - STB5NC70Z-1 DIM. mm inch A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 E 10 10.4 0.393 0.409 L 13.1 13.6 0.515 0.531 L1 3.48 3.78 0.137 0.149 L2 1.27 1.4 0.050 0.055 L B D E A CA1 e P011P5/E TO-262 (I2PAK) MECHANICAL DATA

STP5NC70Z - STP5NC70ZFP - STB5NC70Z - STB5NC70Z-1 DIM. mm inch A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.21 1.36 0.047 0.053 D 8.95 9.35 0.352 0.368 E 10 10.4 0.393 0.409 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 L2 L3L B2 B GE A D C DETAIL "A" DETAIL "A" P011P6/E TO-263 (D2PAK) MECHANICAL DATA

STP5NC70Z - STP5NC70ZFP - STB5NC70Z - STB5NC70Z-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com