STP5NC50

STP5NC50 STMICROELECTRONICS | Alldatasheet

Document overview

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Technical content

N-CHANNEL 500V - 1.3Ω - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh™II MOSFET ■ TYPICAL R DS (on) = 1.3Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100% AVALANCHE TESTED ■ NEW HIGH VOLTAGE BENCHMARK ■ GATE CHARGE MINIMIZED

DESCRIPTION

The PowerMESH ™ II is the evolution of the first generation of MESH OVERLAY™. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate charge and ruggedness.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES ABSOLUTE MAXIMUM RATINGS (•)Pulse width limited by safe operating area (1)ISD ≤5.5A, di/dt≤100A/µs, VDD ≤ V(BR)DSS ,Tj≤ TJMAX. TYPE V DSS R DS(on) ID STP5NC50 STP5NC50FP STB5NC50 STB5NC50-1 500 V 500 V 500 V 500 V <1 . 5Ω <1 . 5Ω <1 . 5Ω <1 . 5Ω 5.5A 5.5A 5.5A 5.5A Symbol Parameter Value Unit STP5NC50 STB5NC50/-1 STP5NC50FP V DS Drain-source Voltage (VGS =0 ) 500 V VDGR Drain-gate Voltage (RGS =2 0kΩ ) 500 V VGS Gate- source Voltage ±30 V ID Drain Current (continuos) at TC = 25°C 5.5 5.5(*) A ID Drain Current (continuos) at TC = 100°C 3.5 3.5(*) A IDM (/circle6 ) Drain Current (pulsed) 22 22 A PTOT Total Dissipation at TC = 25°C 100 35 W Derating Factor 0.8 0.28 W/°C dv/dt(1) Peak Diode Recovery voltage slope 3.5 V/ns VISO Insulation Withstand Voltage (DC) - 2500 V Tj Tstg Operating Junction Temperature Storage Temperature -55 to 175 -65 to 175 (*)Limited only by maximum temperature allowed INTERNAL SCHEMATIC DIAGRAM TO-220 TO-220FP D 2PAK 1 2 3 I2PAK

STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1 THERMAL DATA AVALANCHE CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF ON (1) DYNAMIC TO-220 D 2PAK I2PAK TO-220FP Rthj-case Thermal Resistance Junction-case Max 1.25 3.57 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tjmax) 5.5 A EAS Single Pulse Avalanche Energy (starting Tj= 25 °C, ID =IAR ,VDD =5 0V ) 280 mJ Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250µA, VGS = 0 500 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) VDS = Max Rating 1µ A VDS = Max Rating, TC = 125 °C 50 µA IGSS Gate-body Leakage Current (VDS =0 ) VGS = ±30V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS =V GS ,ID = 250µA 234V R DS(on) Static Drain-source On Resistance VGS =1 0 V ,ID =2A 1.3 1.5 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs(1) Forward Transconductance V DS >ID(on)xR DS(on)max, ID = 2.5A C iss Input Capacitance VDS =2 5 V ,f=1M H z ,VGS =0 480 pF C oss Output Capacitance 80 pF C rss Reverse Transfer Capacitance 11.5 pF

STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1 Safe Operating Area for TO-220FPSafe Operating Area for TO-220/D2PAK/I2PAK

ELECTRICAL CHARACTERISTICS

(CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE N o t e : 1 . P u l s e d :P u l s ed u r a t i o n=3 0 0µ s ,d u t yc y c l e1 . 5% . 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time Rise Time VDD =2 5 0 V ,ID = 2.5A R G = 4.7Ω VGS =1 0 V (see test circuit, Figure 3) 14 ns tr 15 ns Q g Total Gate Charge VDD =4 0 0 V ,ID = 5.5A, VGS =1 0 V 17.5 24.5 nC Q gs Gate-Source Charge 3 nC Q gd Gate-Drain Charge 9 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) Off-voltage Rise Time VDD = 400V, ID = 5.5A, R G =4 . 7Ω, VGS = 10V (see test circuit, Figure 5) 12 ns tf Fall Time 14 ns tc Cross-over Time 20 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 5.5 A ISDM (2) Source-drain Current (pulsed) 22 A VSD (1) Forward On Voltage ISD = 5.5A, VGS =0 1.6 V trr Reverse Recovery Time ISD = 5.5A, di/dt = 100A/µs, VDD =1 0 0 V ,Tj=1 5 0 ° C (see test circuit, Figure 5) 360 ns Q rr Reverse Recovery Charge 1.6 µC IRRM Reverse Recovery Current 9 A

STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1 Thermal Impedence for TO-220/D2PAK/I2PAK Output Characteristics Thermal Impedence for TO-220FP Transfer Characteristics Transconductance Static Drain-source On Resistance

STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1 Source-drain Diode Forward Characteristics Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs Temp. Gate Charge vs Gate-source Voltage Capacitance Variations

STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1 Fig. 5:Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4:Gate Charge test Circuit Fig. 2:Unclamped Inductive WaveformFig. 1:Unclamped Inductive Load Test Circuit Fig. 3:Switching Times Test Circuit For Resistive Load

STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1 DIM. mm inch A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 A C D E F G Dia. TO-220 MECHANICAL DATA P011C

STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1 A B D E H G ¯ F 123F2 L4L5 DIM. mm. inch A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.5 0.045 0.067 F2 1.15 1.5 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 TO-220FP MECHANICAL DATA

STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1 DIM. mm. inch A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 8 0.315 E 10 10.4 0.393 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0.015 V2 0º 8º D 2PAK MECHANICAL DATA

STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1 DIM. mm inch A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 E 10 10.4 0.393 0.409 L 13.1 13.6 0.515 0.531 L1 3.48 3.78 0.137 0.149 L2 1.27 1.4 0.050 0.055 L B D E A CA1 e P011P5/E TO-262 (I2PAK) MECHANICAL DATA

STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1 TAPE AND REEL SHIPMENT (suffix ”T4”)* TUBE SHIPMENT (no suffix)* D 2PAK FOOTPRINT * on sales type DIM. mm inch MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY 1000 1000 REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 TAPE MECHANICAL DATA

STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com