STP5N90 STMICROELECTRONICS | Alldatasheet

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Flot-B Sl POWER MOS TRANSISTOR STP5N90 900 V <2.4Q 5A STPSN9OFI 900 V <24Q 2.8A » TYPICAL Ros(on) = 1.9 2 Cg : « AVALANCHE RUGGED TECHNOLOGY « 100% AVALANCHE TESTED N N « REPETITIVE AVALANCHE DATA AT 100°C. IN LOW INPUT CAPACITANCE 2° 2° » LOW GATE CHARGE 1 1 » APPLICATION ORIENTED CHARACTERIZATION 10-220 ISOWATT220

APPLICATIONS

» HIGH CURRENT, HIGH SPEED SWITCHING « SWITCH MODE POWER SUPPLIES (SMPS) » CONSUMER AND INDUSTRIAL LIGHTING » DC-AC INVERTERS FOR WELDING INTERNAL SCHEMATIC DIAGRAM EQUIPMENT AND UNINTERRUPTIBLE a) POWER SUPPLY (UPS) ¢ . s (3) ABSOLUTE MAXIMUM RATINGS [vos [Brain'source Vonage Wess) SSCS [Pitccn “Jorein- gate Votage Ros =20K0) | [Wee [Gate-souree Votage Te [oto [Orain Curent (continvousyat eae" | ST [ie oman Curent (continuous) atTe= 100° | 8] CA Tower [Drain Curent (pulses) TST [Pus [Tota DissipatonatTe=a5* Tes | Tw [TJoerating Factor SSCS ee | [Vso insulation Winsiand Votage(O0) STL 2000 [Teg [Storage Temperaue—SSSSC~iCSSS HOG [t, lMax Operating Junction Temperaure | 18D (*) Pulse width limited by safe operating area April 1993 V7 j 861 k oo -

STP5N90/Fl 3 : THERMAL DATA i mas | Riy.case [Thermal Resistance Junction-case Max - 312 eed Rinj-amp {Thermal Resistance Junction-ambient Max $2.5 ‘ow = Rthe-sink |Thermal Resistance Case-sink Typ ' 0.5 : ony & Ti Maximum Lead Temperature For Soldering Purpose ~ 300 1 8% ee: AVALANCHE CHARACTERISTICS =a [_symbol | Parameter Max Value 4 Uedt = Avalanche Current, Repetitive or Not-Repetitive 5 ay eS (pulse width limited by T; max, 5 < 1%) ! a Single Pulse Avalanche Energy 270 : my ae (starting Tj = 25 °C, Ip = lan, Von = 50 V) x a a Repetitive Avalanche Energy 13 fa) ¥ (pulse width limited by Tj max, 5 < 1%) _ | z= Avalanche Current, Repetitive or Not-Repetitive 3 ‘a 4 (Tc = 100 °C, pulse width limited by T; max, 8 < 1%) cok . ss ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise sc=>“1ed) OFF E Viaryoss_ |Drain-source Ip=250pnA Ves=0 S00 | i Vv Breakdown Voltage ——— | — Zero Gate Voltage Vos = Max Rating ‘ 250 i pA Drain Current (Vgs = 0) | Vos = Max Ratingx 0.8 To= 125° 1000 ; | less Gate-body Leakage Ves =+20V +1001) na + j Current (Vos = 0) _| _j ON (*) 3 | Vesum [Gate Threshold Voltage|Vos= Vas lo = 250 nA Zz | 3 4[yv i Rosion) |Static Drain-source On |Vas=10V Ip=2.5A 1.9 24 | $ | Resistance Ves=10V Ip=2.5A Te = 100°C i 48 | —4 ; if Ip(on) On State Drain Current |Vps > Ip(on) X Ros(on)max Sy 1 4 i Ves= 10V ! . DYNAMIC. = Qts (*) [Forward Vos > Ip(on) X Rosion)max lp = 2.5 & 2 4 ! 7 Transconductance 3 i go | 1450 PF " Ciss Input Capacitance Vos=25V f=1MHz Ves=0 1 00 oF < Coss |Output Capacitance 165 ns pF Crss_ | Reverse Transfer 70 4 Capacitance _—e : on j 862 ‘Y/ Micros crromcs asi

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ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON [ [Sumber [Parameter [eet Gonaons [win [ typ. [ max. [ Uni] E ta(on) | Turn-on Time Voo=400V Ip=2.5A t tr Rise Time Re =502 Ves = 10V i (see test circuit, figure 3) (di/dt)on |Turn-on Current Slope |Vop= 640V Ip=5.5A 200 A/us Re = 502 Ves = 10 V (see test circuit, figure 5) = Q, Total Gate Charge Vop =500V Ip=6A Voes=10V 75 nc Qgs Gate-Source Charge 9 nc Qga Gate-Drain Charge 33 nc : SWITCHING OFF i i tyvort) jOff-voltage Rise Time |Vop=640V_ Ip=5.5A 120 150 ns t tr Fall Time Re=50Q2 Ves =10V 30 40 ns + te Cross-over Time ~ (see test circuit, figure 5) 160 200 ns fa : SOURCE DRAIN DIODE i Iso |Source-drain Current A Ispm(e) |Source-drain Current A (pulsed) i tre Reverse Recovery Iso=5A — di/dt = 100 A/us 700 ns : Time Vpop = 80V Tj= 150°C i Qn Reverse Recovery (see test circuit, figure 5) 7.7 uC i Charge H lraM Reverse Recovery 22 A : Current = (*) Pulsed: Pulse duration = 300 ps, duty cycle 1.5 % i (*) Pulse width limited by safe operating area | Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220 t GC34780 6C34790. »/ OAS ed _ =a : (ee / =e T oe eee a | a | t 2 a 2 0 i 7a TRANS TT Le SN i 10's Se oe Hil 10 5 ApS Sy = PERE SEH 1 Ous HHH =| Seite eet eee t “ ACNE 1 00us Hil ol a NSIS tT Toone tif { 7 AEN SS cy 2-1 ASAE TS Ci) oe Rl 1 TNT msl ‘Frio, opeaTion ga |O7 Hid JAP oc. OPERATION ESE 10m : Og 1 00m Tr 2A ooms Ht oS LMT Na

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Thermal Impedeance For TO-220 Thermal Impedance For ISOWATT220 Semaaiii eemesi manila = Fae | i Za ie ant lez LM Cte Coa IN vo Cer | I wo ZA TMI parece pes ee aise oy cmmnti Ae Pho.01 TTI Za = & Rinse [o.o2 BRA Cri 2m = Rnwe | sincte purse | |lll] @= 7 i erase Tit TT 6 = t2/+ 107 eee i Eevee iM Eee | LL FR eT Sti Sti sti a vo UTI ee Derating Curve For TO-220 Derating Curve For ISOWATT220 Prot WM) TTT TLL Prot) CET ee soot en TTT TTT “PERCE LN COCNEC EEE reer COON Tree PTT TNT rr rrr EOC SENSE EEE Li TTT TN Try COCO ON Ce

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: STP5N90/FI NE Transconductance Static Drain-source On Resistance SCT TTT Tr 1) SCL LLLILILL | Sis! ( Qo ) eb a PEP SCA ee 7 fi 1 —— 2.0 = AP pp eT POAT wl LEE YAEL Tr =iso°e | de | P~eTTT TTT Try) COTE ow ET TT 1.0 LT ves =28v fT TT EERE ARERR os- Lt tit tt tt | 0 2 4 6 8 10 1,(A) “o 2 4 6 B Ip(A) Gate Charge vs Gate-source Voltage Capacitance Variations orgs cor ecsanuo vs“ TTT TTT TT ZT 1] ae) 10 | teste Af aaca FEET TT we pA TO ee eH Soccceeeee TTT TTT yy iy yt a OOOO a COCOA ole [Tem Ly | wagett ee TT ri TT PrLeeelt i Ty Posea tT POP reeeee eee] aes soft tS 2 rss O33 Pri PTT ety te et SSS ; () 20 40 60 80 Qq(nC) 0 20 40 60 80 vdv) » Normalized Gate Threshold Voltage vs Normalized On Resistance vs Temperature T omperaue eam seen sae * (on) (eFC ei EEE HEE 20FF{ =2.88 HEE ATH . 1 EEE EEE Ceo COSC COCO EOP BRREEEEEEE ESEEEEE EE

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400 VET Te Voo =640V 40 rT TT yyy Vop =640V

PEE “EEE | | : 0 20 40 60 80 Ro(9) 0 20 40 60 80 Ro(1) : Cross-over Time Switching Safe Operating Area 669) Tae a ri rPPerereeye ott tT ttt tr ty 400 ‘ PCCELLL eee SERRE Foo oi LLE EPC soot | | I | | | POPP erry LT Tet tt ere a rool | | | | | LAT | PEP Pr re rr yy tT | et Vop =640V 10 aan Ren LE Pera POE reer FEET 100 aT lpeS.5A sti | s TT yt PPC EEE to) 20 40 60 80 Re(0) 0 200 400 600 800 1000 Vps(V) : Accidental Overload Area Source-drain Diode Forward Characteristics 6022000 a C9) A dA) a af tit t ti tt tt tt ——— prey eee yee yy a a a HHH = se OS sEECEEEEEC EE nap 4aB 0408 ol frie PTT ae PT py te-zous TTT en A Heeerceer | = HAVA EEE EERE EE EEE ALA 0 200 400 600 800 1000 Vps(V) 0.5 1 15 2 2.5 Ve(¥) “SS STA SGS"THOMSON ss ne peace ——

Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms Vosryoss ‘ Vp — ‘e 2200 3.34 BF MF Yoo low 1 TA ° lo. 7 “ \\ — Voo Y “ iN Yoo w f D.U.T. 1 “ \\ LI / eee eee Pw $C05980 scose70 Fig. 3: Switching Times Test Circuits For Fig. 4: Gate Charge Test Circuit Resistive Load oY 00 12V (] 47K (| 1Ka 1O00nF RL 2200 3.3 BP as Yoo Toe Yo V;=20V=Veuax '@CONST 1009 pwu.t. _ Ro 0.U.T. T °~ T2200 e. — LI se | ° = T oA 47K0 seosase SL gop H yt OKA as a xeon i . : Fig. 5: Test Circuit For Inductive Load Switching : And Diode Reverse Recovery Time j A A OA ! D Mos ‘ DIODE a FAST. L=1002H g 8 3.3 | 1000 250 . 5 . we Lee Yoo ‘ id D.U.T. + Re Ss 4 aso . scosaro ££ Scs-THosON LL ‘Tf iaicnocecrnonics 867 & oe