STP5N60

STP5N60FI STMICROELECTRONICS | Alldatasheet

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Technical content

7 SGS-THOMSON STP5N60

MICROELECTRONICS STP5N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR CIE NIV PRAWNS TU STP5N60 600 V <162 | 56A STPSN6OFI 600 V <162 3.2A «= TYPICAL Ros(on) = 1.33 2 = AVALANCHE RUGGED TECHNOLOGY = 100% AVALANCHE TESTED = REPETITIVE AVALANCHE DATA AT 100°C « APPLICATION ORIENTED 2° 63 CHARACTERIZATION - 1 1

APPLICATIONS

«HIGH CURRENT, HIGH SPEED SWITCHING 70-220 'SOWATT220 «= SWITCH MODE POWER SUPPLIES (SMPS) = CHOPPER REGULATORS, CONVERTERS, —_ _ - MOTOR CONTROL, LIGHTING FOR INDUSTRIAL AND CONSUMER oo ENVIRONMENT INTERNAL SCHEMATIC DIAGRAM oa) se) ABSOLUTE MAXIMUM RATINGS symbol Parameter - “Value Unit | 7 STP5N60__| _STPSNGOFI Vos _|Drain-source Voltage (Ves = 0) 600 Voor _|Drain- gate Voltage (Res = 20 kQ) 600 | Vv Ves |Gate-source Voltage __+ 20 Vv [tows [Drain curentipuses) 20] aa Viso__| Insulation Withstand Voltage (DC) ee ee ee 7__ [Max. Operating Junction Temperature [0 SSStSt~*SC (+) Pulse width limited by safe operating area July 1993 ww

70-220 | IsOwATT220| _| Rinjcase [Thermal Resistance Junction-case Max 1 3.12 Rinj-amp Thermal Resistance Junction-ambient Max 62.5 °ciw Rine-siak [Thermal Resistance Case-sink Typ | 05 °orw Tr Maximum Lead Temperature For Soldering Purpose 300 °C AVALANCHE CHARACTERISTICS | tan [Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, 8 < 1%) Single Pulse Avalanche Energy md (starting Tj = 25 °C, lo = lan, Voo = 50 V) | Earn |Repetitive Avalanche Energy md (pulse width limited by Tj max, 8 < 1%) 7 lan [Avalanche Current, Repetitive or Not-Repetitive (Te = 100 °C, pulse width limited by Tj max, 8 < 1%) ELECTRICAL CHARACTERISTICS (Tease = 25 °C unless otherwise specified) OFF [Symbot [Parameter | Test Conditions [ min. | Typ. | Max. | Unit | Vierjoss |Drain-source p= 250A Vas=0 600 v Breakdown Voltage Ipss__|Zero Gate Voltage [Vos = Max Rating 250 | WA Drain Current (Vas = 0) |Vos = Max Rating x 0.8 Te= 125°C 1000 | yA [lass [Gate-body Leakage [Vos = + 20V +100 Current (Vos = 0) ON (*) [ symbol | Parameter Test Conditions Min. | Typ. | Max. | Unit | Gate Threshold Voltage |Vos = Vas_lp = 250 A ,2{]|3i{4fv i Rosin) |Static Drain-source On |Vas=10V l= 25A 15 Resistance Vos=10V In=25A To = 100°C 3 Iojen) [On State Drain Current |Vos > lovon) X Rosion)max | __ Mes=10Vo00 DYNAMIC [symbol | __ Parameter Test Conditions [ Min. | Typ. | Max. | unit | ats (*) [Forward Vos > In(on) X Rostonymax lp = 2.5.A |Transconductance Cis [Input Capacitance Vos=25V f=1MHz Vos=0 720 | 1000 | pF Coss | Output Capacitance 120 | 170 | pF Crs _|Reverse Transter 50 | 70 | pF Capacitance

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON | Symbol Parameter Test Conditions [ min. | Typ. | Max. | unit | tao [Turn-on Time Voo=300V Ip=2.5A 55 | 75 t, [Rise Time Ro=502 Vos =10V 150 | 200 (see test circuit, figure 3) (di/dtjon [Turn-on Current Slope |Voo= 480V Ip=5A 115 Alus Re=50Q Ves = 10 _ _ (see test circuit, figure 5) _ Q, |TotalGate Charge [Vo = 480V. Ip=5A Vos=10V 46 | 65 | nc Qgs__|Gate-Source Charge 8 nc Qos |Gate-Drain Charge | 25 nc SWITCHING OFF [Sumber | Parameter [Test Gonaltions | Wn | Wor | Wax | Unit | tavern {Off-voltage Rise Time |Vpo=480V Ip=5A 80 105 ns ty |Fall Time Rig = 502 Vos = 10V 25 | 35 | ns te __|Cross-over Time (see test circuit, figure 5) 120 | 160 | ns SOURCE DRAIN DIODE ‘Symbol Parameter Test Conditions “Min. | Typ. | Max. | Unit | se |Source-drain Current A Isou(e) |Source-drain Current A (pulsed) Vso (*) [Forward On Voltage |Iso=5.9A Vas=0 a Reverse Recovery —|Iso= 6A di/dt = 100 Aius, ns Time Vop=100V T= 150°C Reverse Recovery _| (see test circuit, figure 5) uc Charge Reverse Recovery A Current (@) Pulsed: Puiso duration = 300 us, duly cle 115 % (6) Pulse width imited by safe operating area Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220 ‘ 34080 a coatoe DP TTR Sas Se a “ HE Sree ee eect acti tia 4 igen a Set ieee eT e 2A il 0 Sa i SNR PEN toons fe SE eS EH hoa Fi TH AIERS ES GO Zo us Fl

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Thermal Impedeance For TO-220 Thermal Impedance For ISOWATT220 ee O « Spo EEESSES = Saati meeaiii memati Semen o> = Stitt Eamon sa Zatiie ae | Hite co aa iiss aaa aa i re (lini io AT LT ie ee Peet ep itt ee aval 0.01 b= Ine escent pee Pfoncar use| ff ee LTS = tp/t 07 ee Pero Tn "eee TUL LY7sincce purse | |||] Saul mail mai seh na il fol] Coops wo LI I vos LLU Derating Curve For TO-220 Derating Curve For ISOWATT220. EERE eee HH} PoP mca cascesssestecieal “CECE ig Nesssiieseresers a Ty Peery soh FAN Coe SAA SR UeREeRTTTTa Note | oo Seer eeea CGTECEOEGE PEN Ty peau bs penSEScacesey ““CoEN EES EET ES N Pr rrr No HHP LELEITN [I CLIT rrr rir NTT ° 50 100 180 Teaao( °C) ° 40 80) 120 Teose (°C) Output Characteristics Transfer Characteristics ET a bol T TTT TT TTT] aoene CA [veer] {| TT EEE CE oy | Seeeee enn eeneey conan Coe yr ACCA A FEAT FR 6 I LA | TOO Jap 420 anne | Z| [yyy 2

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Static Drain-source On Resistance Transconductance . oc | ‘Seo I Peet ee pebecdsesecert “CORLL are HEE EEEEEECH Hoe Ee EH BE Hi | = | [iva aa HA SeSEE : (a i. ope 7 TT. sr 4 rt] Pr EHH poaau ia 10 He Poe ERE D/4n 4 oH FA VES) EEE EE [ft | HH ian ina bi 3 4 5 IpfA) 1 : Capacitance Variations Gate Charge vs Gate-source Voltage : SSE [TFT Ty Coo oO FAA HH 1500 seeeeegs gene “CO _ Po ea | Eeuesses’ Annee meceeeenae Sesrssiey (ftTss mes i iestrtazizs ‘ LAT I EEE Ho EeEHEHH 70 a ee ss He CH tH PTE ry | ‘ oe Inaae Hd Baeeeeeae Z| | A EE apsaeov- I Scena \\ SuuugeEe Oo] woes isan doit 10 20 30 40 SO Vos! oe 40 50 Og(nC) 0 _ tage vs Normalized On Resistance vs Temperature i hold Voltage a Normalized Gate Thres! " pone Ty wom LIT IF 1 cc) (orm) Eo ecco Misesseey . Pes AH LEH HEP SELOTH a EE HA L | Sanne anes poy PrN 24 “LOTT TEN CAL Eee oe Ae oa LEI 50. 100.7, (&) o

57 SSS-THOMSON TT

Turn-on Current Slope Turn-off Drain-source Voltage Slope di /dt sessaee dv/at —— 7) woof TTT | | wat | EL J voz | oT ee cI wool N_| aan ot AL LI - PAP TTT LINE TT ot J NS JESKLE TI Peet} ESET POP Cort ° 40 80 120 Re(a) oO 40 80 120 ®e(M) Cross-over Time ‘Switching Safe Operating Area tel) i: wot) SSeeeeEEEEeaae HESS sol} verstov Cee eee, TERE 200 ) Tt) cc LT er 2 Pree PZ T, =150°C)

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Zaneee (ET Lt Prt | KEES EEE eee 0 40 80 120 Ro( fh) 0 19 20 30 40 SO ps (V) Accidental Overload Area Source-drain Diode Forward Characteristics OATES ‘TTT TTT TTL | aE wT eet TT | | [it i | pee CoC ee cee esa Con CCee| Pei =s2e EEE EEE -AEH eoss-ann eeceseee TT wt TT TI Cotes HH art Ceoooe occ oe ise] | Tt Tt | wa TTP TTT TTT SSSSRSRSEEee Be Corer 4 ot _ LEE T TT TT ° 10 20 30 40 50 Vos (V) 0 4 8 12 16 Igo (A) Ny Ee R22.

Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped inductive Waveforms Voonyoss . Yo —~ Yo 2200 | 3.3 wr |r | Yoo low ° v\\ bn” | - Mo Yoo 4 Dut. 1” \\ me - seo Fig. 3: Switching Times Test Circuits For Fig. 4: Gate Charge Test Circuit Resistive Load Yoo cee so Ka | 100nF Rn — [2200 | 3.3 wr} eF | vay ian Yo viszov—Veue 2% sco. out, og ° — be < bus. Te00 jena] T y ae | fe Fy ro I os oxo some a a ee Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time n & 2 os eitRme ges, Etst0mH Fee ou ae ee za O na) oJ k our a g 2 #80 |