STD5N52K3 STMICROELECTRONICS | Alldatasheet

Document overview

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Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package mechanical data
  • 5 Package mechanical data
  • 6 Revision history

Features

■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Improved diode reverse recovery characteristics ■ Zener-protected Application Switching applications

Description

These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications. Figure 1. Internal schematic diagram Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. Limited only by maximu m temperature allowed
  2. Pulse width limited by safe operating area

Table 3. Thermal data

2 Electrical characteristics

Table 4. On /off states Table 5. Dynamic

  1. C oss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

integrity. These integrated Zener diodes thus avoid the usage of external components. Table 6. Switching times Table 7. Source drain diode

  1. Pulse width limited by safe operating area
  2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Table 8. Gate-source Zener diode

2.1 Electrical characterist ics (curves)

Figure 2. Safe operating area TO-220, D²PAK Figure 3. Thermal impedance TO-220, D²PAK Figure 4. Safe operating area TO-220FP Figure 5. Thermal impedance TO-220FP Figure 6. Safe operating area DPAK, IPAK Figure 7. Thermal impedance DPAK, IPAK

3 Test circuits

Figure 18. Switching times test circuit for Figure 19. Gate charge test circuit Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test Figure 22. Unclamped inductive wavefo rm Figure 23. Switching time waveform

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

Figure 24. TO-220FP drawing Table 9. TO-220FP mechanical data

Table 10. DPAK (TO-252) mechanical data

Figure 25. DPAK (TO-252) drawing

Table 11. TO-220 type A mechanical data

Figure 26. TO-220 type A drawing

Table 12. D²PAK (TO-263) mechanical data

Figure 27. D²PAK (TO-263) drawing Table 13. IPAK (TO-251) mechanical data

Figure 28. IPAK (TO-251) drawing

5 Package mechanical data

Figure 29. D²PAK footprint (a) Table 14. D²PAK (TO-263) tape and reel mechanical data

Figure 30. DPAK footprint (b) Table 15. DPAK (TO-252) tape and reel mechanical data

6 Revision history

Table 16. Document revision history 05-Jan-2010 1 First release. 14-Dec-2010 2 Document status promoted from preliminary data to datasheet.