STP55NF06L STMICROELECTRONICS | Alldatasheet

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Technical content

N-CHANNEL 60V - 0.014Ω - 55A TO-220/FP/D2PAK/I2PAK STripFET™II POWER MOSFET (1) Starting Tj=25°C, ID =27.5A, VDD =30V (2) ISD ≤ 55 A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS , Tj ≤ TJMAX. ■ TYPICAL R DS (on) = 0.014Ω ■ EXCEPTIONAL dv/dt CAPABILITY ■ APPLICATION ORIENTED CHARACTERIZATION

DESCRIPTION

This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting tran- sistor shows extremely high packing density for low on-resistance, rugged avalance characteris- tics and less critical alignment steps therefore a re- markable manufacturing reproducibility.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ DC-DC & DC-AC CONVERTERS ■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) ABSOLUTE MAXIMUM RATINGS (● ) Pulse width limited by safe operating area TYPE V DSS R DS(on) ID STP55NF06L STP55NF06LFP STB55NF06L STB55NF06L-1 60 V 60 V 60 V 60 V <0.018 Ω <0.018 Ω <0.018 Ω <0.018 Ω 55 A 55 A 55 A 55 A Symbol Parameter Value Unit STP55NF06L STB55NF06L/-1 STP55NF06LFP VDS Drain-source Voltage (VGS = 0) 60 V VDGR Drain-gate Voltage (RGS = 20 kΩ ) 60 V VGS Gate- source Voltage ± 16 V ID Drain Current (continuous) at TC = 25°C 55 30 A ID Drain Current (continuous) at TC = 100°C 39 21 A IDM (/c108 ) Drain Current (pulsed) 220 120 A PTOT Total Dissipation at TC = 25°C 95 30 W Derating Factor 0.63 0.2 W/°C dv/dt (2) Peak Diode Recovery voltage slope 20 V/ns EAS (1) Single Pulse Avalanche Energy 300 mJ VISO Insulation Withstand Voltage (DC) - 2500 V Tstg Storage Temperature – 55 to 175 °C Tj Max. Operating Junction Temperature TO-220 TO-220FP 1 2 3 I2PAKD 2PAK INTERNAL SCHEMATIC DIAGRAM

STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1 THERMAL DATA ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF ON (1) DYNAMIC TO-220 D 2PAK I2PAK TO-220FP Rthj-case Thermal Resistance Junction-case Max 1.58 5.0 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 60 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1µ A VDS = Max Rating, TC = 125 °C 10 µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 16 V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS , ID = 250 µA 1 1.7 V R DS(on) Static Drain-source On Resistance VGS = 5 V, ID = 27.5 A 0.016 0.020 Ω VGS = 10V, ID = 27.5 A 0.014 0.018 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS = 15V , ID = 27.5 A 30 S C iss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 1700 pF C oss Output Capacitance 300 pF C rss Reverse Transfer Capacitance 105 pF

STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1.Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 30 V, ID = 27.5A R G = 4.7Ω VGS = 10V (see test circuit, Figure 3) 20 ns tr Rise Time 100 ns Q g Q gs Q gs Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 48 V, ID = 55 A, VGS = 4.5V 37 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit t d(off) tf Turn-off-Delay Time Fall Time VDD = 30 V, ID = 27.5 A, R G =4 . 7Ω, VGS = 4.5V (see test circuit, Figure 5) ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 55 A ISDM (2) Source-drain Current (pulsed) 220 A VSD (1) Forward On Voltage ISD = 55 A, VGS = 0 1.3 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 55A, di/dt = 100A/µs, VDD = 30 V, Tj = 150°C (see test circuit, Figure 5) 200 ns nC A Thermal Impedance for TO-220/D2PAK/I2PAKSafe Operating Area For TO-220/D2PAK/I2PAK

STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1 Safe Operating Area For TO-220FP Static Drain-source On Resistance Output Characteristics Thermal Impedance For TO-220FP Transfer Characteristics Transconductance

STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1 Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature Capacitance VariationsGate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temp.

STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1 Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4: Gate Charge test Circuit Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load

STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1 DIM. mm inch A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 A C D E F G Dia. TO-220 MECHANICAL DATA P011C

STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1 A B D E H G ¯ F 123F2 L4L5 DIM. mm. inch A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 TO-220FP MECHANICAL DATA

STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1 DIM. mm. inch A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 8 0.315 E 10 10.4 0.393 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0.015 V2 0 º4 º D 2PAK MECHANICAL DATA

STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1 DIM. mm inch A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 E 10 10.4 0.393 0.409 L 13.1 13.6 0.515 0.531 L1 3.48 3.78 0.137 0.149 L2 1.27 1.4 0.050 0.055 L B D E A CA1 e P011P5/E TO-262 (I2PAK) MECHANICAL DATA

STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1 TAPE AND REEL SHIPMENT (suffix ”T4”)* TUBE SHIPMENT (no suffix)* D 2PAK FOOTPRINT * on sales type DIM. mm inch MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY 1000 1000 REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 TAPE MECHANICAL DATA

STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com