STP52N25M5 STMICROELECTRONICS | Alldatasheet

Document overview

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  • PDF pages: 12

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package mechanical data
  • 5 Revision history

Features

■ Amongst the best RDS(on)* area ■ High dv/dt capability ■ Excellent switching performance ■ Easy to drive ■ 100% avalanche tested Application ■ Switching applications

Description

This devices is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Figure 1. Internal schematic diagram Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. Pulse width limited by safe operating area.

Table 3. Thermal data

2 Electrical characteristics

(Tcase =25°C unless otherwise specified). Table 4. On /off states Table 5. Dynamic

  1. C o(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0
  2. C o(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0

Table 6. Switching times Table 7. Source drain diode

  1. Pulse width limited by safe operating area.
  2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

2.1 Electrical characterist ics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on resistance

3 Test circuits

Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test Figure 17. Unclamped inductive wavefo rm Figure 18. Switching time waveform

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

TO-220 type A mechanical data Dim mm Min Typ Max A 4.40 4.60 b 0.61 0. 88 b1 1.14 1.70 c0 . 4 8 0.70 D 15.25 15.75 D1 1.27 E1 0 1 0 . 4 0 e 2.40 2.70 e1 4. 95 5.15 F1 . 2 3 1.32 H1 6.20 6.60 J1 2.40 2.72 L1 3 14 L1 3.50 3.93 L20 16.40 L302 8.90 ∅P 3.75 3.85 Q 2.65 2. 95 0015988_Rev_S

5 Revision history

Table 8. Document revision history