STP4NB80 STMICROELECTRONICS | Alldatasheet

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Technical content

N - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FP PowerMESH  MOSFET ■ TYPICAL RDS(on) = 3 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100% AVALANCHE TESTED ■ VERY LOW INTRINSIC CAPACITANCES ■ GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE INTERNAL SCHEMATIC DIAGRAM September 2001 TO-220 TO-220FP ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP4NB80 STP4NB80FP V DS Drain-source Voltage (VGS = 0) 800 V V DGR Drain- gate Voltage (RGS = 20 kΩ ) 800 V V GS Gate-source Voltage ± 30 V ID Drain Current (continuous) at Tc = 25 oC 4 4(*) A ID Drain Current (continuous) at Tc = 100 oC 2.4 2.4(*) A IDM (•) Drain Current (pulsed) 16 16 A P tot Total Dissipation at Tc = 25 oC 100 35 W Derating Factor 0.8 0.28 W/ oC dv/dt(1) Peak Diode Recovery voltage slope 4.5 4.5 V/ns V ISO Insulation Withstand Voltage (DC)  2500 V Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC (•) Pulse width limited by safe operating area (1) ISD ≤4 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (*) Limited only by maximum temperature allowed TYPE V DSS R DS(on) ID STP4NB80 STP4NB80FP 800 V 800 V 3.3 Ω 3.3 Ω 4 A 4 A

R thj-case Thermal Resistance Junction-case Max 1.25 3.6 oC/W R thj-amb R thc-sink Tl Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 62.5 0.5 300 oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) E AS Single Pulse Avalanche Energy (starting Tj = 25 oC, ID = IAR , VDD = 50 V) 230 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage ID = 250 µA VGS = 0 800 V IDSS Zero Gate Voltage Drain Current (VGS = 0) V DS = Max Rating V DS = Max Rating Tc = 125 oC µ A µ A IGSS Gate-body Leakage Current (VDS = 0) V GS = ± 30 V ± 100 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(th) Gate Threshold VoltageV DS = VGS ID = 250 µ A 345V R DS(on) Static Drain-source On Resistance V GS = 10V ID = 2 A 3 3.3 Ω ID(on) On State Drain Current VDS > ID(on) x RDS(on)max V GS = 10 V DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗) Forward Transconductance V DS > ID(on) x RDS(on)max ID = 2 A 1.5 2.9 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz VGS = 0 700 920 126 pF pF pF STP4NB80/FP

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on delay Time Rise Time V DD = 400 V ID = 2 A R G = 4.7 Ω VGS = 10 V ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 640 V ID = 4 A VGS = 10 V 21 29 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time V DD = 640V ID = 4 A R G = 4.7 Ω VGS = 10 V ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) A A V SD (∗) Forward On Voltage I SD =4 A VGS = 0 1.6 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 4 A di/dt = 100 A/µ s V DD = 100 V Tj = 150 oC 600 3.3 ns µ C A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area for TO-220 Safe Operating Area for TO-220FP STP4NB80/FP

Thermal Impedance for TO-220 Output Characteristics Transconductance Thermal Impedance forTO-220FP Transfer Characteristics Static Drain-source On Resistance STP4NB80/FP

Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Capacitance Variations Normalized On Resistance vs Temperature STP4NB80/FP

Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times STP4NB80/FP

DIM. mm inch A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.052 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 H2 10.00 10.40 0.394 0.409 L2 16.40 0.645 L4 13.00 14.00 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.260 L9 3.50 3.93 0.137 0.154 M 2.60 0.102 P011CI TO-220 MECHANICAL DATA STP4NB80/FP

DIM. mm inch A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 A B D E H G ¯ F 123F2 TO-220FP MECHANICAL DATA STP4NB80/FP

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2001 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com STP4NB80/FP