STP4NA90 STMICROELECTRONICS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

G35-024% /63 y GT SGS-THOMSON <gSTPANAg0 ~ MICROELECTRONICS ( STP4NA90FI = N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR [Tre [Voss | Rouen [to | STP4NA90 900 V <4Q 35A STP4NASOFI 900 V <4Q 22A = TYPICAL Roscen) = 3.1.Q © « +30V GATE TO SOURCE VOLTAGE RATING =» 100% AVALANCHE TESTED WN = REPETITIVE AVALANCHE DATA AT 100°C. « LOWINTRINSIC CAPACITANCES 5 « GATE CHARGE MINIMIZED. ‘ 2 Y 2 a REDUCED THRESHOLD VOLTAGE SPREAD TO-220 ISOWATT220

APPLICATIONS

a HIGH CURRENT, HIGH SPEED SWITCHING » SWITCH MODE POWER SUPPLIES (SMPS) ‘ « DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE INTERNAL SCHEMATIC DIAGRAM ‘s(3) ABSOLUTE MAXIMUM RATINGS [Vos [orainsource VotageVes= Sid SCC [to [Drain Current (continuousyatTe=25% —*| a8 «i aa «| A [to [Drain Current (continuous)atTe=100°° —~+| 2a | 14 + A _| [Tou) [Oren Current pulses) | | A [Pia [Total Dissipation atTe=25% SSSCSC=~sSC“‘izN CYC CW [__[Derating Factor SSSSCSC~Ci SYS *d | | Viso [Insulation Withstand Votage (OG) _———~+|__— | 2000+ v | [71 —|Max. Operating uncon Temperature SEO (*) Pulse width limited by safe operating area November 1995

: STP4NASQO/FI THERMAL DATA Rtnj-amb |Thermal Resistance Junction-ambient Max 62.5 “cw Rthe-sink |Thermal Resistance Case-sink Typ 0.5 °Cw Tr Maximum Lead Temperature For Soldering Purpose 300 °C AVALANCHE CHARACTERISTICS [Symbor [Parameter ‘| Max Value | Unit | laR Avalanche Current, Repetitive or Not-Repetitive 3.5 A (pulse width limited by Tj max, 5 < 1%) Single Pulse Avalanche Energy 65 mJ (starting Tj = 25 °C, lo = lar, Von = 50 V) Repetitive Avalanche Energy 25 md : (pulse width limited by T; max, 5 < 1%) Avalanche Current, Repetitive or Not-Repetitive A (Te = 100 °C, pulse width limited by Tj max, 5< 1%) ELECTRICAL CHARACTERISTICS (Tease = 25 °C unless otherwise specified) OFF Symbol [Parameter | Test Conditions| Win. | Typ | Wax | Uni | Vier)oss_|Drain-source Ip= 250 HA Vos=0 Vv Breakdown Voltage loss Zero Gate Voltage Vos = Max Rating 25 pA Drain Current (Ves = 0) |Vps = Max Rating x 0.8 T.= 100°C 250 pA Gate-body Leakage Ves =+30V +100 nA Current (Vos = 0) ON (+) Gate Threshold Voltage |Vos = Ves lo = 250 pA Static Drain-source On |Vcs=10V In=2A Q Resistance Q On State Drain Current |Vos > Iron) x Ros(on)max A Ves = 10 V DYNAMIC Forward Vos > lnxon) X RDS(on)max Ip = 2A 4.5 Ss Transconductance Ciss Input Capacitance Vos=25V f=1MHz Ves=0 1100 pF Coss Output Capacitance 110 pF Crss Reverse Transfer 26 pF Capacitance “Y/ imcroascraowcs

: STP4NASO/FI NN ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON [Symbol [Parameter [___TestGongitions | in. | Typ. | max. | unit | tajon) | Turn-on Time Vop=450V Ip=2A 20 28 tr Rise Time Re=4.70 Ves = 10 V 27 37 (see test circuit, figure 3) (di/dt)on |Turn-on Current Slope |Vpp=720V Ip=4A 125 Al/us Re = 479 Ves = 10V (see test circuit, figure 5) Qg Total Gate Charge Vop =720V Ip=4A Ves=10V 51 70 nc Qos Gate-Source Charge 8 nc Qoa Gate-Drain Charge 21 nc SWITCHING OFF [Symbol [Parameter | Test Condition | Min. | Typ. | Max. | Unit | tyvorn |Off-voltage Rise Time |Vpp=720V Ip=4A 12 17 ns tr Fall Time Re=4.7Q Ves=10V 14 20 ns te Cross-over Time (see test circuit, figure 5) 22 30 ns SOURCE DRAIN DIODE Iso Source-drain Current 3.5 A Isom(e) |Source-drain Current 14 A (pulsed) Forward OnVatage|imo=35A Ves=0+| | | 16 | v_| ter Reverse Recovery Iso=4A_ di/dt = 100 Aus 900 ns Time Voo=100V 1, = 150°C Qe Reverse Recovery (see test circuit, figure 5) 15 yc Charge InRM |Reverse Recovery 33.5 A Current () Pulsed: Pulse duration = 300 ps, duty cycle 15% (9) Pulse width limited by safe operating area Safe Operating Area for TO-220 Safe Operating Area for TO-220 Pe es-romson — SYM iacromacraomcs

. STPANASOIFI hh TO-220 MECHANICAL DATA [om [we | tte | CT Sto Tome Pos [rz | ams [CT Sto Toe Te fo =| eT Cd Toe Pts fou | to S| SCidEC twos] Sts S| st Loa | az [| ST Stes Totem Tots “ (HU o Cr] o [| > . SE) S ae Cs "+ 15 | & a Lo U6 | u PO11C MICROELECTRONICS

. STP4NAQO/FI ISOWATT220 MECHANICAL DATA | Feo Se ee 2 Be a a DD TY YS ST CE a a T DT a YY ee aE YE | a Y |e [sete os es] a a 2 uw <x a a a a Lé = iz 7 rt 123 Le M4 PO11G SS FHOMSO 58 MICROMECTROMICS