STP4NA80 STMICROELECTRONICS | Alldatasheet
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Technical content
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR n TYPICAL RDS(on) = 2.4Ω n ± 30V GATE TO SOURCE VOLTAGE RATING n 100% AVALANCHE TESTED n REPETITIVE AVALANCHE DATA AT 100 oC n LOW INTRINSIC CAPACITANCES n GATE GHARGE MINIMIZED n REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low R DS(on) and gate charge, unequalled ruggedness and superior switching performance.
APPLICATIONS
n HIGH CURRENT, HIGH SPEED SWITCHING n SWITCH MODE POWER SUPPLIES (SMPS) n DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE INTERNAL SCHEMATIC DIAGRAM TYPE V DSS R DS(on) ID STP4NA80 STP4NA80FI 800 V 800 V <3 Ω <3 Ω 2.5 A TO-220 ISOWATT220 February 1994 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP4NA80 STP4NA80FI V DS Drain-source Voltage (VGS =0 ) 8 0 0 V V DG R Drain-gate Voltage (RGS =2 0k Ω )8 0 0 V V GS Gate-source Voltage ± 30 V ID Drain Current (continuous) at Tc =2 5 oC4 2 . 5 A ID Drain Current (continuous) at Tc =1 0 0oC2 . 5 1 . 6 A IDM (•) Drain Current (pulsed) 16 16 A P tot Total Dissipation at Tc =2 5 oC 110 45 W Derating Factor 0.88 0.36 W/ oC V ISO Insulation Withstand Voltage (DC) 2000 V Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC (•) Pulse width limited by safe operating area
R thj-case Thermal Resistance Junction-case Max 1.13 2.77 oC/W R thj-amb R thc- sink Tl Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 62.5 0.5 300 oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ <1 % ) E AS Single Pulse Avalanche Energy (starting Tj =2 5 oC, ID =I AR ,V DD =5 0V ) 80 mJ E AR Repetitive Avalanche Energy (pulse width limited by Tj max, δ <1 % ) 3.1 mJ IAR Avalanche Current, Repetitive or Not-Repetitive (Tc = 100 oC, pulse width limited by Tj max, δ <1 % ) 2.5 A ELECTRICAL CHARACTERISTICS (Tcase =2 5oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID =2 5 0µAV GS = 0 800 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) V DS =M a xR a t i n g V DS = Max Rating x 0.8 Tc =1 2 5oC 250 1000 µA µA IGSS Gate-body Leakage Current (VDS =0 ) V GS = ± 30 V ± 100 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS (th) Gate Threshold Voltage VDS =V GS ID =2 5 0µ A 2.25 3 3.75 V R DS(on) Static Drain-source On Resistance V GS =1 0 V ID =2A V GS =1 0 V ID =2A T c =1 0 0oC 2.4 3 Ω Ω ID(on) On State Drain Current VDS >I D(on) xR DS(on)max V GS =1 0V DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗)F o r w a r d Transconductance V DS >I D(on) xR DS(on)max ID =2A 2 . 5 4 . 3 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =2 5V f=1M H z V GS =0 9 5 5 105 1350 150 pF pF pF STP4NA80/FI
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time V DD =4 0 0V I D =2A R G =4 7 Ω VGS =1 0V (see test circuit, figure 3) 100 ns ns (di/dt)on Turn-on Current Slope V DD =6 4 0V I D =4A R G =4 7 Ω VGS =1 0V (see test circuit, figure 5)
170 A/ µs
V DD = 640 V I D =4A V GS =1 0V 4 4 65 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time V DD =6 4 0V I D =4A R G =4 7 Ω VGS =1 0V (see test circuit, figure 5) 130 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) A A V SD (∗) Forward On Voltage I SD =4A V GS =0 1 . 6 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD =4A d i / d t=1 0 0A /µs V DD = 100 V T j =1 5 0oC (see test circuit, figure 5) 680 10.5 ns µC A (∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Areas for TO-220 Safe Operating Areas for ISOWATT220 STP4NA80/FI
Thermal Impedeance For TO-220 Derating Curve For TO-220 Output Characteristics Thermal Impedance For ISOWATT220 Derating Curve For ISOWATT220 Transfer Characteristics STP4NA80/FI
Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs Temperature STP4NA80/FI
Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics STP4NA80/FI
Fig. 2:Unclamped Inductive Waveforms Fig. 3:Switching Times Test Circuits For Resistive Load Fig. 4:Gate Charge Test Circuit Fig. 5:Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time Fig. 1:Unclamped Inductive Load Test Circuits STP4NA80/FI
DIM. mm inch A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 A C D E F G Dia. TO-220 MECHANICAL DATA P011C STP4NA80/FI
DIM. mm inch A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.4 0.7 0.015 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 A B D E H G Ø F 123 ISOWATT220 MECHANICAL DATA P011G STP4NA80/FI
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorizedfor use as critical components in life supportdevices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A STP4NA80/FI