STD4N80K5 STMICROELECTRONICS | Alldatasheet

Document overview

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  • PDF pages: 23

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package information
  • 4.1 DPAK(TO-252), package information
  • 4.2 TO-220FP , package information
  • 4.3 TO-220, package information
  • 4.4 IPAK(TO-251), package information
  • 5 Packaging mechanical data
  • 6 Revision history

Features

  • Industry’s lowest RDS(on) x area
  • Industry’s best figure of merit (FoM)
  • Ultra low gate charge
  • 100% avalanche tested
  • Zener-protected

Applications

  • Switching applications

Description

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. TO-220 TO-220FP DPAK TAB TAB TAB IPAK 7$% AM01476v1 Order code V DS RDS(on) max. I D PTOT STD4N80K5 800 V 2.5 Ω 3 A 60 W STF4N80K5 20 W STP4N80K5 60 W STU4N80K5 Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. Limited by maximum junction temperature
  2. Pulse width limited by safe operating area
  3. I SD < 3 A, di/dt < 100 A/µs, VDS(peak) ≤ V(BR)DSS

Table 3. Thermal data

  1. When mounted on 1inch² FR-4 board, 2 oz Cu

2 Electrical characteristics

Table 4. On /off states Table 5. Dynamic

  1. Time related is defined as a constant equivalent capacitance giving the same charging time as C oss when
  2. Energy related is defined as a constant equival ent capacitance giving the same stored energy as C oss

need for external components. Table 6. Switching times Table 7. Source drain diode

  1. Pulse width limited by safe operating area
  2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Table 8. Gate-source Zener diode

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for DPAK and Figure 3. Thermal impedance for DPAK and Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for TO-220 Figure 7. Thermal impedance for TO-220

Figure 8. Output characteristics Figure 9. Transfer characteristics Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance Figure 12. Capacitance variations Figure 13. Normalized gate threshold voltage vs

5 VDS=20V

Figure 14. Normalized on-resistance vs Figure 15. Source-drain diode forward Figure 16. Normalized VDS vs temperature Figure 17. Maximum avalanche energy vs.

1.1 ID = 1mA

3 Test circuits

Figure 18. Switching times test circuit for Figure 19. Gate charge test circuit Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test circuit Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

4.1 DPAK(TO-252), package information

Figure 24. DPAK (TO-252) type A outline

Figure 25. DPAK (TO-252) mechanical data

Figure 26. DPAK (TO-252) footprint (a)

4.2 TO-220FP , package information

Figure 27. TO-220FP outline

Table 9. TO-220FP mechanical data

4.3 TO-220, package information

Figure 28. TO-220 type A outline

Table 10. TO-220 type A mechanical data

4.4 IPAK(TO-251), package information

Figure 29. IPAK (TO-251) type A outline

Table 11. IPAK (TO-251) type A mechanical data

5 Packaging mechanical data

Table 12. DPAK (TO-252) tape and reel mechanical data

6 Revision history

Table 13. Document revision history – Updated title and description in cover page. and Table 7.: Source drain diode.