STP4N150 STMICROELECTRONICS | Alldatasheet

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Table 3: Absolute Maximum ratings (/circle6 ) Pulse width limited by safe operating area (*) Limited only by maximum temperature allowed Table 4: Thermal Data Table 5: Avalanche Characteristics ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 6: On /Off Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 1500 V VDGR Drain-gate Voltage (RGS = 20 kΩ ) 1500 V VGS Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 4A ID Drain Current (continuous) at TC = 100°C 2.5 A IDM (/circle6 ) Drain Current (pulsed) 12 A PTOT Total Dissipation at TC = 25°C 160 W Derating Factor 1 W/ °C Tj Tstg Operating Junction Temperature Storage Temperature -55 to 150 °C TO-220 TO-247 Rthj-case Thermal Resistance Junction-case Max 0.78 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 50 °C/W Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR , VDD = 50 V) 350 mJ Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 1 mA, VGS = 0 1500 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating,TC = 125°C 500 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 30 V ± 100 nA VGS(th) Gate Threshold VoltageVDS = VGS , ID = 250 µA 3 4 5V R DS(on) Static Drain-source On Resistance VGS = 10 V, ID = 2 A 5 7 Ω

ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic Table 8: Source Drain Diode (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance V DS = 30 V , ID = 2 A 3.5 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, f = 1 MHz, VGS = 0 1300 120 pF pF pF td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off-Delay Time Fall Time V DD = 750 V, ID = 2 A, R G = 4.7 Ω, VGS = 10 V (see Figure 19) ns ns ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 600 V, ID = 4 A, VGS = 10 V (see Figure 22) 50 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit I SD ISDM (2) Source-drain Current Source-drain Current (pulsed) A A VSD (1) Forward On Voltage ISD = 4 A, VGS = 0 2V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 4 A, di/dt = 100 A/µs VDD = 45V (see Figure 20) 510 ns µC A trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 4 A, di/dt = 100 A/µs VDD = 45V, Tj = 150°C (see Figure 20) 650 12.6 ns µC A

DIM. mm. inch A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 TO-220 MECHANICAL DATA

DIM. mm. inch A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 0.620 e5 . 4 5 0 . 2 1 4 L 14.20 14.80 0.560 0.582 L1 3.70 4.30 0.14 0.17 L2 18.50 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S5 . 5 0 0 . 2 1 6 TO-247 MECHANICAL DATA

Table 9: Revision History Date Revision Description of Changes 11-Mar-2005 1 First release. 27-Apr-2005 2 Removed TO-220FP 07-Jul-2005 3 Complete version

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