STP45NF3LL STMICROELECTRONICS | Alldatasheet

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N-CHANNEL 30V - 0.014Ω - 45A TO-220 - TO220FP - D2PAK STripFET II™ POWER MOSFET (1) Starting Tj=2 5 ° C ,ID = 22.5A, VDD =2 4 V ■ TYPICAL R DS (on) = 0.014Ω @4.5V ■ OPTIMAL RDS(ON) x Qg TRADE-OFF @ 4.5V ■ CONDUCTION LOSSES REDUCED ■ SWITCHING LOSSES REDUCED ■ ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL

DESCRIPTION

This application specific Power MOSFET is the third genaration of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows the best trade-off be- tween on-resistance ang gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high effi- ciency are of paramount importance.

APPLICATIONS

■ SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTERS ABSOLUTE MAXIMUM RATINGS (● ) Pulse width limited by safe operating area TYPE V DSS R DS(on) ID STP45NF3LL STP45NF3LLFP STB45NF3LL 30 V 30 V 30 V <0.018Ω <0.018Ω <0.018Ω 45 A 45 A 27 A Symbol Parameter Value Unit TO-220/D 2PAK TO-220FP VDS Drain-source Voltage (VGS =0 ) 30 V VDGR Drain-gate Voltage (RGS =2 0kΩ ) 30 V VGS Gate- source Voltage ± 16 V ID Drain Current (continuous) at TC = 25°C 45 27 A ID Drain Current (continuous) at TC = 100°C 32 19 A IDM (/circle6 ) Drain Current (pulsed) 180 108 A PTOT Total Dissipation at TC = 25°C 70 25 W Derating Factor 0.46 0.167 W/°C EAS (1) Single Pulse Avalanche Energy 241 mJ Viso Insulation Withstand Voltage (DC) -- 2500 V Tstg Storage Temperature –5 5t o1 7 5 ° C Tj Max. Operating Junction Temperature D 2PAK TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF ON (1) DYNAMIC TO-220 D 2PAK TO-220FP Rthj-case Thermal Resistance Junction-case Max 2.14 6 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 30 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) VDS = Max Rating 1µ A VDS = Max Rating, TC = 125 °C 10 µA IGSS Gate-body Leakage Current (VDS =0 ) VGS = ± 16 V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS =V GS ,ID = 250µA 1V R DS(on) Static Drain-source On Resistance VGS =1 0V ,ID = 22.5 A 0.014 0.018 Ω V GS = 4.5V, ID = 22.5 A 0.016 0.020 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs(1) Forward Transconductance V DS =15 V ,ID =2 2 . 5A 20 S C iss Input Capacitance VDS =2 5 V ,f=1M H z ,VGS =0 800 pF C oss Output Capacitance 250 pF C rss Reverse Transfer Capacitance 60 pF

ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD =1 5V ,ID = 22.5A R G = 4.7Ω VGS =4 . 5 V (Resistive Load, see Fig. 3) 17 ns tr Rise Time 100 ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =2 4 V ,ID = 45A, V GS =5 V 12.5 4.6 5.2 17 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off-Delay Time Fall Time VDD = 15V, ID = 22.5A, R G =4 . 7Ω, VGS = 4.5V (Resistive Load, see Fig. 3) ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 45 A ISDM (2) Source-drain Current (pulsed) 180 A VSD (1) Forward On Voltage ISD = 45A, VGS =0 1.3 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 45A, di/dt = 100A/µs, VDD =1 5 V ,Tj= 150°C (see test circuit, Figure 5) 2.5 ns nC A Safe Operating Area for TO-220/D2PAK Thermal Impedance for TO-220/D2PAK

Thermal Impedance for TO-220FPSafe Operating Area for TO-220FP Transconductance Static Drain-source On Resistance Transfer CharacteristicsOutput Characteristics

Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Tj Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp. Gate Charge vs Gate-source Voltage Capacitance Variations

Fig. 5:Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4:Gate Charge test Circuit Fig. 2:Unclamped Inductive WaveformFig. 1:Unclamped Inductive Load Test Circuit Fig. 3:Switching Times Test Circuit For Resistive Load

DIM. mm inch A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 A C D E F G Dia. TO-220 MECHANICAL DATA P011C

DIM. mm inch A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 A B D E H G ¯ F 123F2 TO-220FP MECHANICAL DATA

DIM. mm. inch A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 8 0.315 E 10 10.4 0.393 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0.015 V2 0º 8º D 2PAK MECHANICAL DATA

TAPE AND REEL SHIPMENT (suffix ”T4”)* TUBE SHIPMENT (no suffix)* D 2PAK FOOTPRINT * on sales type DIM. mm inch MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY 1000 1000 REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 TAPE MECHANICAL DATA

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