STP45NF06L STMICROELECTRONICS | Alldatasheet

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Technical content

N-CHANNEL 60V - 0.022Ω -3 8 AT O - 2 2 0/D2PAK STripFET™ II POWER MOSFET (1) ISD ≤38A, di/dt≤300A/µs, VDD ≤ V(BR)DSS ,Tj≤ TJMAX. ■ TYPICAL R DS (on) = 0.022Ω ■ EXCEPTIONAL dv/dt CAPABILITY ■ LOGIC LEVEL GATE DRIVE

DESCRIPTION

This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting tran- sistor shows extremely high packing density for low on-resistance, rugged avalance characteris- tics and less critical alignment steps therefore a re- markable manufacturing reproducibility.

APPLICATIONS

■ HIGH-EFFICIENCY DC-DC CONVERTERS ■ SOLENOID AND RELAY DRIVERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ DC-DC & DC-AC CONVERTERS ABSOLUTE MAXIMUM RATINGS (● ) Pulse width limited by safe operating area TYPE V DSS R DS(on) ID STP45NF06L STB45NF06L 60 V 60 V < 0.028Ω < 0.028Ω 38 A 38 A Symbol Parameter Value Unit VDS Drain-source Voltage (VGS =0 ) 60 V VDGR Drain-gate Voltage (RGS =2 0kΩ ) 60 V VGS Gate- source Voltage ±16 V ID Drain Current (continuos) at TC = 25°C 38 A ID Drain Current (continuos) at TC = 100°C 26 A IDM (/circle6 ) Drain Current (pulsed) 152 A PTOT Total Dissipation at TC = 25°C 80 W Derating Factor 0.53 W/°C dv/dt (1) Peak Diode Recovery voltage slope 7 V/ns Tstg Storage Temperature –55 to 175 °C Tj Max. Operating Junction Temperature D 2PAK TO-220 INTERNAL SCHEMATIC DIAGRAM

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF ON (1) DYNAMIC Rthj-case Thermal Resistance Junction-case Max 1.87 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tjmax) 38 A EAS Single Pulse Avalanche Energy (starting Tj= 25 °C, ID =IAR ,VDD =5 0V ) 135 mJ Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 60 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) VDS = Max Rating 1µ A VDS = Max Rating, TC = 125 °C 10 µA IGSS Gate-body Leakage Current (VDS =0 ) VGS = ±16V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS =V GS ,ID = 250µA 1 1.7 2.5 V R DS(on) Static Drain-source On Resistance VGS =5V ,ID =1 9A 0.024 0.03 Ω V GS =1 0 V ,ID =1 9A 0.022 0.028 Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs(1) Forward Transconductance V DS =15V ,ID =19 A 24 S C iss Input Capacitance VDS =2 5 V ,f=1M H z ,VGS =0 1600 pF C oss Output Capacitance 217 pF C rss Reverse Transfer Capacitance 62 pF

ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD =3 0 V ,ID =1 9 A R G = 4.7Ω VGS =1 0 V (see test circuit, Figure 3) 30 ns tr Rise Time 105 ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =4 8 V ,ID = 38A, V GS =5 V 31 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off-Delay Time Fall Time VDD = 30V, ID =1 9 A , R G =4 . 7Ω, VGS = 10V (see test circuit, Figure 3) ns ns td(off) Off-voltage Rise Time Vclamp =48V, ID =38A R G =4 . 7Ω, VGS = 10V 50 ns tf Fall Time (see test circuit, Figure 5) 55 ns tc Cross-over Time 85 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 38 A ISDM (2) Source-drain Current (pulsed) 152 A VSD (1) Forward On Voltage ISD = 38A, VGS =0 1.5 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 38A, di/dt = 100A/µs, VDD =1 0 0 V ,Tj=1 5 0 ° C (see test circuit, Figure 5) 110 ns nC A Thermal ImpedenceSafe Operating Area

Gate Charge vs Gate-source Voltage Transconductance Static Drain-source On Resistance Transfer Characteristics Capacitance Variations

Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature

Fig. 5:Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4:Gate Charge test Circuit Fig. 2:Unclamped Inductive WaveformFig. 1:Unclamped Inductive Load Test Circuit Fig. 3:Switching Times Test Circuit For Resistive Load

DIM. mm inch A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 A C D E F G Dia. TO-220 MECHANICAL DATA P011C

DIM. mm. inch A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 8 0.315 E 10 10.4 0.393 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0.015 V2 0º 8º D 2PAK MECHANICAL DATA

TAPE AND REEL SHIPMENT (suffix ”T4”)* TUBE SHIPMENT (no suffix)* D 2PAK FOOTPRINT * on sales type DIM. mm inch MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY 1000 1000 REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 TAPE MECHANICAL DATA

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