STP45N10 STMICROELECTRONICS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 10

Technical content

N - CHANNEL 100V - 0.027Ω - 45A - TO-220/TO-220FI POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.027 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100 oC ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175 oC OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ DC-DC & DC-AC CONVERTERS ■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMP DRIVERS. Etc.) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP45N10 STP45N10FI V DS Drain-source Voltage (VGS = 0) 100 V V DGR Drain- gate Voltage (RGS = 20 kΩ ) 100 V V GS Gate-source Voltage ± 25 V ID Drain Current (continuous) at Tc = 25 oC4 5 2 4 A ID Drain Current (continuous) at Tc = 100 oC3 2 1 7 A IDM (•) Drain Current (pulsed) 180 180 A P tot Total Dissipation at Tc = 25 oC1 5 0 4 5 W Derating Factor 1 0.3 W/ oC V ISO Insulation Withstand Voltage (DC)  2000 V Tstg Storage Temperature -65 to 175 oC Tj Max. Operating Junction Temperature 175 oC TYPE V DSS R DS(on) ID STP45N10 STP45N10FI 100 V 100 V < 0.035 Ω < 0.035 Ω 45 A 24 A June 1998 TO-220 ISOWATT220

R thj-case Thermal Resistance Junction-case Max 1 3.33 oC/W R thj-amb R thc-sink Tl Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 62.5 0.5 300 oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) 45 A E AS Single Pulse Avalanche Energy (starting Tj = 25 oC, ID = IAR , VDD = 25 V) 400 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage ID = 250 µA VGS = 0 100 V IDSS Zero Gate Voltage Drain Current (VGS = 0) V DS = Max Rating V DS = Max Rating x 0.8 V DS = Max Rating x 0.8 Tc = 125 oC µ A µ A IGSS Gate-Source Leakage Current (VDS = 0) V GS = ± 20 V ± 100 mA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(th) Gate Threshold Voltage V DS = VGS ID = 250 µA 234V R DS(on) Static Drain-source On Resistance V GS = 10 V ID = 22.5 A V GS = 10 V ID = 22.5 A Tc = 100oC 0.027 0.035 0.07 Ω Ω ID(on) On State Drain Current VDS > ID(on) x RDS(on)max V GS = 10 V 45 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗) Forward Transconductance V DS > ID(on) x RDS(on)max ID = 22.5 A 20 40 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz VGS = 0 4100 600 150 5200 800 220 pF pF pF STP45N10/FI

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time V DD = 50 V ID = 22.5 A R G = 4.7 Ω VGS = 10 V 105 ns ns (di/dt)on Turn-on Current Slope V DD = 80 V ID = 45 A R G = 47 Ω VGS = 10 V

400 A/ µ s

V DD = 80 V ID =45 A VGS = 10 V 120 170 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time V DD = 80 V ID = 45 A R G = 4.7 Ω VGS = 10 V ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 180 A A V SD (∗) Forward On Voltage I SD = 45 A VGS = 0 1.5 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 45 A di/dt = 100 A/µ s V DD = 30 V Tj = 150 oC 200 0.14 ns µ C A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area for TO-220 Safe Operating Area for ISOWATT220 STP45N10/FI

Thermal Impedance for TO-220 Derating Curve for TO-220 Output Characteristics Thermal Impedance for ISOWATT220 Derating Curve for ISOWATT220 Transfer Characteristics STP45N10/FI

Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature Static Drain-source On Resistance Capacitance Variations Normalized On Resistance vs Temperature STP45N10/FI

Turn-off Drain-source Voltage Slope Switching Safe Operating Area Source-drain Diode Forward Characteristics STP45N10/FI

Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times STP45N10/FI

DIM. mm inch A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 A C D E F G Dia. TO-220 MECHANICAL DATA P011C STP45N10/FI

DIM. mm inch A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.4 0.7 0.015 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 A B D E H G ¯ F 123F2 ISOWATT220 MECHANICAL DATA P011G STP45N10/FI

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. STP45N10/FI