Datasheet - STP43N60DM2 - N‑channel 600 V, 85 mΩ typ., 34 A MDmesh DM2 Power MOSFET in a TO-220 package
Document overview
- Manufacturer or author: STMICROELECTRONICS
- PDF pages: 11
Technical content
Features
Order code VDS RDS(on) max. ID STP43N60DM2 600 V 93 mΩ 34 A
- Fast-recovery body diode
- Extremely low gate charge and input capacitance
- Low on-resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
Applications
- Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast‑recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high‑efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. 1 2 3 TO-220 TAB D(2, TAB) G(1) S(3) AM01476v1_tab Product status link STP43N60DM2 Product summary Order code STP43N60DM2 Marking 43N60DM2 Package TO-220 Packing Tube N‑channel 600 V, 85 mΩ typ., 34 A MDmesh DM2 Power MOSFET in a TO-220 package STP43N60DM2 Datasheet DS10533 - Rev 6 - March 2026 For further information, contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Pulse width is limited by safe operating area.
Table 2. Thermal data Table 3. Avalanche characteristics
2 Electrical characteristics
TC = 25 °C unless otherwise specified. Table 4. On/off states
- Specified by design, not tested in production.
Table 5. Dynamic
- Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
Table 6. Switching times Figure 18. Switching time waveform)
Electrical characteristics
Table 7. Source-drain diode
- Pulse width is limited by safe operating area.
- Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Normalized transient thermal impedance Figure 3. Typical output characteristics Figure 4. Typical transfer characteristics Figure 5. Typical gate charge characteristics Figure 6. Typical drain-source on-resistance
3 Test circuits
Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior Figure 15. Test circuit for inductive load switching and Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
4 Package information
To meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions, and product status are available at: www.st.com. ECOPACK is an ST trademark.
4.1 TO-220 type A package information
Figure 19. TO-220 type A package outline
Package information
Table 8. TO-220 type A package mechanical data
Revision history
Table 9. Document revision history 04-Aug-2014 1 First release. Table 8: Source drain diode. Updated Section 4.2: TO-247, STW43N60DM2.
- Updated title description In Section 2 Electrical characteristics:
- Updated table 5 On/off states
- Updated table 8 Source drain diode Added Section 2.1 Electrical characteristics (curves) 19-Jun-2015 4 Updated cover page features table. 02-Jul-2015 5 On cover page:
- updated title In section Electrical characteristics:
- Updated tables Static, Dynamic, Switching times and Source-drain diode In section Electrical characteristics (curves):
- Updated figures Gate charge vs gate-source voltage, Static drain-source on-resistance, and Capacitance variations 12-Mar-2026 6 Updated Section 4: Package information. Minor text changes. STP43N60DM2
DS10533 - Rev 6 page 10/11
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