N-channel 150 V - 0.042 Ω - 40 A TO-220 MESH OVERLAY™ MOSFET
Document overview
- Manufacturer or author: STMicroelectronics
- PDF pages: 6
Technical content
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. STP40NS15 N-CHANNEL 150V - 0.042Ω - 40A TO-220 MESH OVERLAY™ MOSFET INTERNAL SCHEMATIC DIAGRAM ■ TYPICAL R DS (on) = 0.042Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ VERY LOW INTRINSIC CAPACITANCES ■ GATE CHARGE MINIMIZED
DESCRIPTION
This powermos MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY ™ process. This technology matches and improves the performances compared with standard parts from various sources.
APPLICATIONS
■ HIGH CURRENT SWITCHING ■ UNINTERRUPTIBLE POWER SUPPLY (UPS) ■ PRIMARYSWITCH IN ISOLATED DC-DC CONVERTERS ABSOLUTE MAXIMUM RATINGS (•)Pulse width limited by safe operating area TYPE V DSS R DS(on) ID STP40NS15 150 V <0.052 Ω 40A Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 150 V VDGR Drain-gate Voltage (RGS = 20 kΩ ) 150 V VGS Gate- source Voltage ±20 V ID Drain Current (continuos) at TC = 25°C 40 A ID Drain Current (continuos) at TC = 100°C 25 A IDM (● ) Drain Current (pulsed) 160 A PTOT Total Dissipation at TC = 25°C 140 W Derating Factor 0.933 W/°C dv/dt Peak Diode Recovery voltage slope 9 V/ns Tstg Storage Temperature –65 to 175 °C Tj Max. Operating Junction Temperature 175 °C TO-220 Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) STP40NS15 THERMAL DATA AVALANCHE CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF ON (1) DYNAMIC Rthj-case Thermal Resistance Junction-case Max 1.07 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Rthc-sink Thermal Resistance Case-sink Typ 0.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 40 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR , VDD = 50 V) 500 mJ Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 150 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1µ A VDS = Max Rating, TC = 125 °C 10 µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ±20V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS , ID = 250µA 23 4 V R DS(on) Static Drain-source On Resistance VGS = 10V, ID = 40 A 0.044 0.052 Ω ID(on) On State Drain Current V DS > ID(on) x RDS(on)max, VGS =1 0 V 40 A Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance V DS > ID(on) x RDS(on)max, ID = 20A 20 S C iss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 2400 pF C oss Output Capacitance 380 pF C rss Reverse Transfer Capacitance 160 pF
Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) STP40NS15 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1.Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time Rise Time VDD = 75V, ID = 20A R G = 4.7Ω , VGS = 10V (see test circuit, Figure 3) 25 ns tr 45 ns Q g Total Gate Charge V DD = 120V, ID = 40A, VGS = 10V 100 110 nC Q gs Gate-Source Charge 17 nC Q gd Gate-Drain Charge 47 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) Turn-off Delay Time VDD = 75V, ID = 20A R G =4 . 7Ω , VGS = 10V (see test circuit, Figure 3) 85 ns Tf Fall Time tr(Voff) Off-voltage Rise Time V clamp = 120V, ID = 20 A, R G =4 . 7Ω, VGS = 10V (see test circuit, Figure 5) 47 ns tf Fall Time 35 ns tc Cross-over Time 70 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 40 A ISDM (2) Source-drain Current (pulsed) 160 A VSD (1) Forward On Voltage ISD = 40A, VGS = 0 1.5 V trr Reverse Recovery Time I SD = 40A, di/dt = 100A/µs, VDD = 50V, Tj = 150°C (see test circuit, Figure 5) 270 ns Q rr Reverse Recovery Charge 200 nC IRRM Reverse Recovery Current 1.5 A
Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) STP40NS15 Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4: Gate Charge test Circuit Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load
Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) STP40NS15 DIM. mm inch A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 A C D E F G Dia. TO-220 MECHANICAL DATA P011C
Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) STP40NS15 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com