STI40N65M2 STMICROELECTRONICS | Alldatasheet

Document overview

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  • PDF pages: 14

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.2 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package information
  • 4.1 I²PAK package information
  • 4.2 TO-220 type A package information
  • 5 Revision history

Features

Order code VDS RDS(on) max. ID STI40N65M2 650 V 0.099 Ω 32 A STP40N65M2

  • Extremely low gate charge
  • Excellent output capacitance (COSS) profile
  • 100% avalanche tested
  • Zener-protected

Applications

  • Switching applications

Description

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packaging STI40N65M2 40N65M2 I²PAK Tube STP40N65M2 TO-220 1 2 1 2 3 TO-220I²PAK TABTAB AM15572v1_tab D(2, TAB) G(1) S(3)

1 Electrical ratings

Table 2: Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 32 A ID Drain current (continuous) at TC= 100 °C 20 A IDM (1) Drain current (pulsed) 128 A PTOT Total dissipation at TC = 25 °C 250 W dv/dt (2) Peak diode recovery voltage slope 15 V/ns dv/dt (3) MOSFET dv/dt ruggedness 50 V/ns Tstg Storage temperature - 55 to 150 Tj Max. operating junction temperature 150 Notes: (1)Pulse width limited by safe operating area. (2) ISD ≤ 32 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 400 V (3) VDS ≤ 520 V Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 0.5 °C/W Rthj-amb Thermal resistance junction-ambient max 62.50 °C/W Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 3 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 820 mJ

2 Electrical characteristics

(TC= 25 °C unless otherwise specified) Table 5: On/off states Symbol Parameter Test conditions Min . Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 650 V IDSS Zero gate voltage Drain current VGS = 0 V, VDS = 650 V 1 µA VGS = 0 V, VDS = 650 V, TC = 125 °C 100 µA IGSS Gate-body leakage current VDS = 0 V, VGS = ± 25 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 16 A 0.087 0.099 Ω Table 6: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS= 100 V, f = 1 MHz, VGS = 0 V - 2355 - pF Coss Output capacitance - 102 - pF Crss Reverse transfer capacitance - 2.7 - pF Coss eq. (1) Equivalent output capacitance VDS = 0 V to 520 V, VGS = 0 V - 380 - pF RG Intrinsic gate resistance f = 1 MHz, open drain - 4.5 - Ω Qg Total gate charge VDD = 520 V, ID = 32 A, VGS = 10 V (see Figure 15: "Gate charge test circuit") - 56.5 - nC Qgs Gate-source charge - 8 - nC Qgd Gate-drain charge - 24 - nC Notes: (1)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 7: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 325 V, ID = 16 A RG = 4.7 Ω, VGS = 10 V (see Figure 14: "Switching times test circuit for resistive load" and Figure 19: "Switching time waveform") - 15 - ns tr Rise time - 10 - ns td(off) Turn-off-delay time - 96.5 - ns tf Fall time - 12 - ns

Table 8: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current 32 A ISDM (1) Source-drain current (pulsed) 128 A VSD (2) Forward on voltage VGS = 0 V, ISD = 32 A - 1.6 V trr Reverse recovery time ISD = 32 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 16: " Test circuit for inductive load switching and diode recovery times") - 468 ns Qrr Reverse recovery charge - 8.7 µC IRRM Reverse recovery current - 37.5 A trr Reverse recovery time ISD = 32 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 16: " Test circuit for inductive load switching and diode recovery times") - 610 ns Qrr Reverse recovery charge - 11.7 µC IRRM Reverse recovery current - 39 A Notes: (1)Pulse width is limited by safe operating area (2)Pulse test: pulse duration = 300 µs, duty cycle 1.5%

2.2 Electrical characteristics (curves)

Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Normalized gate threshold voltage vs temperature Figure 7: Normalized V(BR)DSS vs temperature ID 0.1 0.1 1 10010 (A) 100µs 1ms 10ms 100 10µs Operation in this area islimited by max R DS(on) VDS(V) Tj = 150 °C Tc = 25 °C Single pulse GIPG090220151652ALS K tp Ƭ Zth= K*Rthj-c δ= tp/Ƭ Single pulse 0.01 δ=0.5 10-1 10-2 10-410-5 10-3 10-2 10-1 tP(s) 0.2 0.1 0.05 0.02 GC20540 DS GIPG300120151500ALS VGS = 6,7,8,9,10 V V 00 4 8 12 16 20 24 ID (A) V (V) GS = 5 V VGS = 4 V GIPG300120151715ALS 0 2 4 6 8 ID (A) VGS (V) VGS = 20 V

Test circuits STI40N65M2, STP40N65M2

3 Test circuits

Figure 14: Switching times test circuit for resistive load Figure 15: Gate charge test circuit Figure 16: Test circuit for inductive load switching and diode recovery times Figure 17: Unclamped inductive load test circuit Figure 18: Unclamped inductive waveform Figure 19: Switching time waveform AM01469v1 VDD 47 kΩ 1 kΩ 47 kΩ 2.7 kΩ 1 kΩ 12 V Vi ≤ VGS 2200 μF PW I G = CONST 100 Ω 100 nF D.U.T. VG AM01470v1 A D D.U.T. S B G A A B B RG G FAST DIODE D S L=100 µH µF 3.3 1000 µF VDDΩ D.U.T. V(B R)DS S VDDVDD VD IDM ID AM01472v1 AM01473v10 VGS 90% VDS ton 90% 10% 90% 10% td(on) tr t td(off) tf 10% off

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

4.1 I²PAK package information

Figure 20: I²PAK package outline 0004982_Rev_H

Table 9: I²PAK mechanical data Dim. mm Min. Typ. Max. A 4.40 – 4.60 A1 2.40 – 2.72 b 0.61 – 0.88 b1 1.14 – 1.70 c 0.49 – 0.70 c2 1.23 – 1.32 D 8.95 – 9.35 e 2.40 – 2.70 e1 4.95 – 5.15 E 10 – 10.40 L 13 – 14 L1 3.50 – 3.93 L2 1.27 – 1.40

4.2 TO-220 type A package information

Figure 21: TO-220 type A package outline

Table 10: TO-220 type A mechanical data Dim. mm Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95

5 Revision history

Table 11: Document revision history Date Revision Changes 09-Feb-2014 1 First release.