STP40N06 STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 7
Technical content
@@ 792923? OO4b47b 079 MESGTH a i SGS-THOMSON STP40N06 YF tacRorecrnomes STP4ONO6FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR [TYPE Voss_| Rosien |! 7 - [STP40N06 sov |<0.0350] 40a | STP40NO6FI 60V |<0.0350) 23a = TYPICAL Rosion) = 0.03 2 : = AVALANCHE RUGGED TECHNOLOGY = 100% AVALANCHE TESTED | = REPETITIVE AVALANCHE DATA AT 100°C. = LOW GATE CHARGE 2° 2° | = HIGH CURRENT CAPABILITY 1 ' = 175°C OPERATING TEMPERATURE | «APPLICATION ORIENTED CHARACTERIZATION To-220 'sowATT220 | APPLICATIONS bo = HIGH CURRENT, HIGH SPEED SWITCHING = SOLENOID AND RELAY DRIVERS | WWERNAL ScNemane Diana | = REGULATORS INTERNAL SCHEMATIC DIAGRAM = DC-DC & DC-AC CONVERTERS 7 | = MOTOR CONTROL, AUDIO AMPLIFIERS | = AUTOMOTIVE ENVIRONMENT (INJECTION, | ABS, AIR-BAG, LAMPDRIVERS, Etc.) 0) | so) | ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit | ‘STP4ONO6 STPAONOGFL | | Vos _ |Drain-source Voltage (Ves = 0) 60 lv Vogr [Drain- gate Voltage (Res = 20 kQ) 60 yv Ves _|Gate-source Voltage +20 v lom(*) Drain Current (pulsed) 160 160 A! | __|Derating Factor | 0.8 0.27 wee Insulation Withstand Voltage (DC) [= 2000 lv Tsig __ [Storage Temperature [ 6510 175 __ | % |__T _|Max. Operating Junction Temperature 175 _ | °c (+) Pulse width limited by safe operating area _ May 1993 _ _ _ _ a 1065 reassess
STP4ONOO/FI MM 7929237 OO4b47? TOS MMSGTH ——— THERMAL DATA —_— [yom [isowarta70 [| | Rinjeaso [Thermal Resistance Junction-case Max| 1.25 Riy-ame {Thermal Resistance Junction-ambient Max 62.5 sow Fincsine [Thermal Resistance Case-sink Typ 0.5 °CIW Ti |Maximum Lead Temperature For Soldering Purpose | 300 °c AVALANCHE CHARACTERISTICS Avalanche Current, Repetitive or Not-Repetitive 40 (pulse width limited by Tjmax,5< 1%) ‘Single Pulse Avalanche Energy 300 ms (starting Tj = 25 °C, lo = tan. Voo = 25 V) Ean _ [Repetitive Avalanche Energy 75 md (pulse width limited by Tj max, 8 < 1%) _ __ lan [Avalanche Current, Repetitive or Not-Repetitive 28 A \\(T. = 100 °C, pulse width limited by Tj max, 8 < 1%) ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF ‘Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit | Veaypss | Drain-source Ip=250 HA Ves=0 Vv Breakdown Voltage | loss Zero Gate Voltage | Vos = Max Rating 250 Drain Current (Ves = 0) |Vos = Max Rating x0.8 Te = 125°C 1000 lass |Gate-body Leakage | Vas= + 20 V £100 Current (Vos = 0) ON (*) “Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit | Ros(on) [Static Drain-source On |Ves = 10V Ip=20A 0.035 | Q Resistance \\Ves=10V_ Ip=20A Te = 100°C 0.07 | a loon) [On State Drain Current |Vps > lover) x Rosion)max 40 A Vos = 10V __ i _ DYNAMIC. Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit gts (*) [Forward Vos > lojon) x Roston)max lo=20A} 13 s Transconductance _ Cise Input Capacitance [Vps=25V f=1MHz Ves=0 1130 | 1500 | pF Coss | Output Capacitance 480 | 650 | pF Crs {Reverse Transfer 140 | 200 | pF [Capacitance _ __ ar ey AL, 1066 eee eres aes
- MM 7929237 0046478 941 MmSGTH _____STPAONOG/FI | ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol | Parameter | Test Conditions [ win. | typ. [ max. | Unit | tajon) | Turn-on Time Voo=25V Ip=20A t, Rise Time Re=502 Vas= 10V (see test circuit, figure 3) (di/dt)on | Turn-on Current Slope |Voo=40V Ip= 40A | Alus | Ro=50Q2 Vos=10V _ (see test circuit, figure 5) Q, |TotalGate Charge [Von = 40. In=40A Vas=10V 42 | 60 | nc Qs |Gate-Source Charge 11 nc Qos |Gate-Drain Charge at nc | ‘SWITCHING OFF |_Symbot [Parameter | Test Conditions Min. Max. | Unit | taven |Off-voltage Rise Time |Vop=40V Ip=40A 110 | 160 | ns | t Fall Time Re=50Q Vas =10V 110 160 ns te__|Cross-over Time (see test circuit, figure 5) 230 | 330 | ns SOURCE DRAIN DIODE | Symbol | _Parameter_—_| Test Conditions | min. | typ. | Max. | Unie | Iso |Source-drain Current Isom(*) |Source-drain Current (pulsed) Forward On Voltage |Iso=40A Vas=0 | fae |v ty [Reverse Recovery |Iso= 40 didt = 100 Aus ns | Time Voo=30V T) = 180°C | Qn | Reverse Recovery _|(see test circuit, figure 5) ne Charge lana |Reverse Recovery A
7 Current :
(*) Pulsed: Pulse duration = 300 us, duty cycle 1.5% (+) Pulse width limited by safe operating area Safe Operating Areas For TO-220 Sate Operating Areas For ISOWATT220 czees0 _ e210 ea esa aria saat Se Basalt meen semaith meni ptt Sse a LL ASST whl SRR
2 CEES ST Ui ATEN IS NST Hd
SESS toms Fal [ZA SSH ome Fi Fa eS one El alii atts is RT {TOS OPERATION ATT 100ms [777 : Elie grctatn NST 2° Hi roe ee 10% pfllo.c.oreraion NAT fl 7-H rd SEHR Ta oO Peg i i i oi) ro “88997 gt? #802? Vee ty) an ee sts- ee ky7 $68;THOMsoN cer eee a...
STP4ONOG/FL mm 7929237 004479 888 MMSGTH Thermal Impedance For TO-220 Thermal Impedance For ISOWATT220, eo) ee \\ ERS eer Fa aaa [= 0s eters [3 = 0S ee et Comme Za emi man) Fie A 9” AM Lo Le a cay ALA Beare aw AME Hf ||. | il rT apese * patter ty os le eee cant ei ae HE 24. k Rue Boag SUL ae ae Ca ii —[4t-] azz oor TINT TT nn. LU TT TT A swe unset] IH CT TTT AN o> 10 108 1? 107 te(s) Olof 10> 107 107 10 tis) Derating Curve For TO-220 Derating Curve For ISOWATT220 PO ann) Pua) OTT HAT PEER RSH PPP rr rrr ra et 7) Ose 420] HOA -A-H FNC CONT Pr CoCN Cee erry rool NCEE PN HENGE SESE Eee st NE HEE EH} COON PENSE HH eho eCH SHEE ab EEN pei yr tN [I EAE SSH oo - SEPP N IBA ENS EE] | HEN eEEEHE EEN =o FEES Eossecsetecenseccets Cerri rr NT} Ceeceree ree PTT] 0 50 100 150Teoee (°C) 6 50 100 150 Tease °C) Output Characteristics Transfer Characteristics cezasr0 cores. nt) 1 Fvs= v[ |] T | fd wa TT TET TTT Io
50 A sot | vos=25v | TA | | | |
| Sees TTT TTT ry yy A! See wl) ET yt | Pitt tA TT |! See 0 HA-AAAFAH-H | of ,oaaeun HEH [| i Vit roll PP ts | wi ttt ty ttt AREER PTTT TAT PT Pp yt fe Cer iy TTT Tt ty) AT ae yy 83:THoMsOM
_ M@ 7929237 0046480 STT MESGTH ___ STPAONO6/FI Transconductance Static Drain-source On Resistance et a out) Tvoset5v] TT TT | ) Li SEeneeeures MBE Cec ceneay eT FL L- an//asnaee an 7 Lea CO aan wl ler wl Bu Y- | oa YT | fo Li sol >] eT TT | FH | [TTT PT ‘Al Pi aLLT TTT TT | ) 8 16 Py} 32 IpfA) ° 8 16 24 32 Ip(A) Gate Charge vs Gate-source Voltage Capacitance Variations | ss zz oy SSeS See “TTT TELL | LEY Pe TY 2 / 209} ae ‘COE woh TTT | TTT , soo [New | CO ool WEEE a7 TT {KT I rif ,) aoe sof tL VE SSeRas=== ‘a Per Lem 0 10 20 3040. 80Q(nc) ° 19 20 30 40 Vos(V) Normalized Gate Threshold Voltage vs Normalized On Resistance vs Temperature Temperature 0] Ao rl “FPA
12 E PT Fven=ves 20 PTT TE
~ | tL! 'o=250uA pity TP Try | PP TP [ {itty yi os |} ETP NET wy a I) EPP AN Ltt PAT Ps ee os He iene 4 Li yt ry [AT TTT te=208 aaL-L ETT TTT ey | ot _ LTT itty ty 1069 CEC EE eOooO;O;
stp4onog/Fl = MM 7929237 OO4b481 434 MMSGTH Turn-on Current Slope Turn-off Drain-source Voltage Slope di /at csse8 dv /dt =e EEE Fa hee Veo =40V Voo =40V “Noe TT er”
200 AEH ALE
Pap] ESSE Cross-over Time Switching Safe Operating Area sels) CITI" iota) oA wa Eo 350 st 4 Cee Se a seeeeeeesseseeaae wot LL IA | veo EE | LW ne we Ee EE] 200 peeereNuseeee * “EEE EEE EH cit |! i tt} HEHE EE EEE} 0 40 80 120 R3(0) 0 10 20 30 40 50 60Vps(V) Accidental Overload Area Source-drain Diode Forward Characteristics — ccume ebveeetetsi.- eee eH 6 EEE He Hi Ee=e=s eo p= a5=ePa0 ve EEE we EEE sore A LET | Se | BOT te 520s | reset | TT | | CoE eer os of A | Zee HEE EH LLC eo oO 10 20 30 40 SO 60Vps(¥) oO 10, 20 30 40 Ign (A) ry Se 1070 NN eeEeEEEEEEOeyeeSEE—E—E———E—E—EEE—EEEEEEEEeeEEeeee
J M@ 7929237 oo4L4ae 372 MESGTH STP40NO6/FI mm GS STPAONOG/FI Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unciamped Inductive Waveforms. ‘ Vp — ” 2200 [3.3 ar lar | Yoo low In” \\ “ out. 1 \\ I a i me — ‘etme Pe | Fig. 3: Switching Times Test Circuits For Fig. 4: Gate Charge Test Circuit Resistive Load | a | 12v aa Ke oon n — |a200 | ss sf “r Yeo Ig=CONST tt * v,220V¥eue 1908 JE ous, Lp fie) 0.0.1. | Lanka Yer _ oa Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time “ a & 20 0 ols Out, Re d ) ese om WwW