STP40N03L-20 STMICROELECTRONICS | Alldatasheet

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N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA n TYPICAL RDS(on) = 0.016Ω n AVALANCHE RUGGED TECHNOLOGY n 100% AVALANCHE TESTED n HIGH CURRENT CAPABILITY n 175oC OPERATING TEMPERATURE n HIGH dV/dt CAPABILITY n APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS

n HIGH CURRENT, HIGH SPEED SWITCHING n POWER MOTOR CONTROL n DC-DC & DC-AC CONVERTERS n SYNCRONOUS RECTIFICATION INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (VGS =0 ) 3 0 V V DGR Drain- gate Voltage (RGS =2 0k Ω )3 0 V V GS Gate-source Voltage ± 15 V ID Drain Current (continuous) at Tc =2 5 oC4 0 A ID Drain Current (continuous) at Tc =1 0 0oC2 8 A IDM (•) Drain Current (pulsed) 160 A P tot Total Dissipation at Tc =2 5 oC9 0 W Derating Factor 0.6 W/ oC dV/dt(1) Peak Diode Recovery voltage slope 6 V/ns Tst g Storage Temperature -65 to 175 oC Tj Max. Operating Junction Temperature 175 oC (•) Pulse width limited by safe operating area TYPE V DSS R DS(on) ID STP40N03L-20 30 V < 0.02 Ω 40 A March 1996 TO-220

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 1.66 62.5 0.5 300 oC/W oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ <1 % ) 40 A E AS Single Pulse Avalanche Energy (starting Tj =2 5 oC, ID =I AR ,V DD =2 5V ) 300 mJ E AR Repetitive Avalanche Energy (pulse width limited by Tj max, δ <1 % ) 75 mJ IAR Avalanche Current, Repetitive or Not-Repetitive (Tc =1 0 0oC, pulse width limited by Tj max, δ <1 % ) 28 A ELECTRICAL CHARACTERISTICS (Tcase =2 5oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage ID = 250 µAV GS =0 3 0 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) V DS =M a xR a t i n g V DS =M a xR a t i n gx0 . 8 Tc = 125 oC 250 1000 µ A µ A IGSS Gate-body Leakage Current (VDS =0 ) V GS = ± 15 V ± 100 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(th) Gate Threshold Voltage VDS =V GS ID =2 5 0µ A1 1 . 6 2 V R DS(on) Static Drain-source On Resistance V GS = 10V I D =2 0A V GS = 10V I D =2 0A T c =1 0 0oC V GS =5 V I D =2 0A 0.016 0.019 0.02 0.04 0.023 Ω Ω Ω I D(on) On State Drain Current VDS >I D(on) xR DS(on)max V GS =1 0V 40 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗)F o r w a r d Transconductance V DS >I D(on) xR DS(on)max ID =2 0A 1 5 2 2 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =2 5V f=1M H z V GS = 0 1800 450 180 2300 580 230 pF pF pF STP40N03L-20

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time V DD =1 5V I D =1 0A R G =4 . 7 Ω VGS =5V (see test circuit, figure 3) 100 ns ns (di/dt)on Turn-on Current Slope V DD =2 4V I D =2 0A R G =5 0 Ω V GS =5V (see test circuit, figure 5)

200 A/ µ s

V DD =2 4V I D =2 0A V GS =5V 4 0 60 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time V DD =2 4V I D =2 0A R G =4 . 7 Ω V GS =5V (see test circuit, figure 5) 100 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 160 A A V SD (∗)F o r w a r d O n V o l t a g e ISD =4 0A V GS =0 1 . 5 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 20 A di/dt = 100 A/ µ s V DD =2 4V T j = 150 oC (see test circuit, figure 5) 0.12 ns µ C A (∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area (1)ISD ≤ 40 A, di/dt≤ 300 A/µs, VDD ≤ V(BR)DSS ,Tj≤ TJMAX STP40N03L-20

Symbol Parameter Value Unit S1 (V14_16<0) (See Power Mosfet Model Subcircuit) ON S2 (V16_11<0) (See Power Mosfet Model Subcircuit) ON LD Drain Inductance 8 nH LG Gate Inductance 10 nH LS Source Inductance 10 nH RDRAIN Drain Resistance 1.9E -2 Ω RGATE Gate Resistance 1 Ω CGD Gate Drain Capacitance 3.92 nF CGS Gate Source Capacitance 1.9 nF ALFA Drift Coeficient 1E -3 V -1 RGN Negative Bias Resistance 10 K Ω DIODE DRAIN GATE (Depletion Capacitance) Symbol Parameter Value Unit CJO Zero Bias p-n Capacitance 2.7 nF VJ p-n Potential 0.35 V M p-n Grading Coefficient 0.55 DIODE DRAIN SOURCE Symbol Parameter Value Unit CJO Zero Bias p-n Capacitance 10 nF VJ p-n Potential 0.35 V M p-n Grading Coefficient 0.55 TT Transit Time 20 nsec N MOSFET Symbol Parameter Value Unit L Channel Length 1 µ Meter W Channel Width 1 µ Meter LEVEL Model Index 3 TOX Oxide Thickness 1 Meter VTO Zero Bias Threshold Voltage 3.25 V U0 Surface Mobility 600 cm 2/VS THETA Mobility Modulation 0.005 V -1 Vmax Maximum Drift Velocity 0 Meter/sec KP Trans Conductance Coefficient 15 Amp/V 2 For Transient Simulation Applicate U.I.C. (Use Initial Condition) Option STP40N03L-20

PSPICE NETLIST OF THE SUBCIRCUIT .SUBCKT STP40N03L-20 1 2 3 *VALUE OF THE PACKAGE INDUCTANCES LS 1 11 10n LG 2 12 10n LD 3 13 7n *RESISTANCE OF THE GATE POLYSILICON RG 12 16 1 *EPY AND DRIFT RESISTANCES RD 13 14 1.9e-02 EDRI 14 15 POLY(2) (13 14) (13 11) 0 0 0 0 1e-3 *CAPACITANCE GATE SOURCE C G S1 61 11 . 9 0 n *OPTIONAL FOR NEGATIVE GATE BIAS * S 25 11 11 11 6S W I T C H *CGN 51 16 3.92n *RGN 51 16 10k *MILLER CAPACITANCE CGD 16 17 3.92n * DEPLETION CAPACITANCE DGD 17 14 DGD S1 17 14 16 14 SWITCH .MODEL DGD D +IS= +CJO=2.6n +Vj=.1 +M=.6 .MODEL SWITCH VSWITCH +RON=1m +ROFF=1MEG +VON=0.1 * OUTPUT CAPACITANCE AND BODY DRAIN DIODE DBD 11 14 DBD .MODEL DBD D +TT=20n +CJO=7.8n +VJ=.1 +M=.6 * MODEL OF THE MOSFET MMAIN 15 16 11 11 MMAIN L=1u W=1u .MODEL MMAIN NMOS +LEVEL=3 +TOX=1 +VTO=3.25 +uo=600 +THETA=0.005 +VMAX=5e7 +KP=28 .ENDS Power Mosfet Model Subcircuit STP40N03L-20

DIM. mm inch A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 A C D E F G Dia. TO-220 MECHANICAL DATA P011C STP40N03L-20

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsabilit y for the consequences of use of such information nor for any infringemen t of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise underany patent or patent rights of SGS-THOMSON Microelectr onics. Specifications mention ed in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectr onics products are not authorized for use as critical compon ents in life supportdevices or systems withoutexpre ss written approval of SGS-THOMSON Microelectonics.  1995 SGS-THOMSON Microelectroni cs - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain- Sweden- Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... STP40N03L-20