Summary
Gate charge minimized 13-Aug-2013
Description
This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. TO-220 1 2 3 TAB D(2, TAB) G(1) S(3) AM01476v1
Source title
STP3NK50Z Datasheet(PDF) - STMicroelectronics