STP3N50XI STMICROELECTRONICS | Alldatasheet

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M@™ 792923? OO4bIbE 487 MMSGTH a STI 7) SGS-THOMSON MICROELECTRONICS STP3N50XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR (Wwe [Woes [Ron [| « TYPICAL Ros(on) = 2.52 = AVALANCHE RUGGED TECHNOLOGY = 100% AVALANCHE TESTED = REPETITIVE AVALANCHE DATA AT 100°C = APPLICATION ORIENTED . 3 CHARACTERIZATION >

APPLICATIONS

= HIGH CURRENT, HIGH SPEED SWITCHING 122 « SWITCH MODE POWER SUPPLIES (SMPS) 'sowa 1 « CHOPPER REGULATORS, CONVERTERS, MOTOR CONTROL, LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT INTERNAL SCHEMATIC DIAGRAM 9 «2) | | | | rao) | $3) ) ABSOLUTE MAXIMUM RATINGS [symbot | Parameter | Value it Drain-source Voltage (Vas = 0) - 500 Drain- gate Voltage (Ros = 20k) _ 500 Gate-source Voltage £20 Drain Current (continuous) at Te = 25°C. A | ‘Drain Current (continuous) at Te = 100 °C 11 ee A oo A Piot__|Total Dissipation at Tc = 25 °C _ 25 _ iw! | [Derating Factor _ _ 02 wee | i Viso__|Insulation Withstand Voltage (DC) _ 4000 Vv Tug __ Storage Temperature - . -65 to 150 °C T)__[Max. Operating Junction Temperature 150 (@) Pulse wicth imited by safe operating area July 1998 7 709 |

STP3NSOX! 3 _ @@ 7929237? OO4b1b? 313 MESGTH —— THERMAL DATA Rinicace [Thermal Resistance Junction-case Max 5 | ecw Rinj-amp |Thermal Resistance Junction-ambient Max 60 °ciw Rinj-amo Thermal Resistance Case-sink Typ 0.5 °C Th Maximum Lead Temperature For Soldering Purpose 300 °c AVALANCHE CHARACTERISTICS lan Avalanche Current, Repetitive or Not-Repetitive 27 a ; |(pulse width limited by Tj max, 8 < 1%) | Eas [Single Pulse Avalanche Energy 200 md ___{starting Tj = 25 °C, tp = tan, Voo = 50 V) _ Esa [Repetitive Avalanche Energy 5 md (pulse width limited by T; max, 8 < 1%) Ika Avalanche Current, Repetitive or Not-Repetitive 16 A {Te = 100 °C, pulse width limited by T) max, 8 < 1%) ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions [ Min. | Typ. | Max. | Unit | Vieryoss | Drain-source Ip = 250A Vas=0 Vv Breakdown Voltage _ loss [Zero Gate Voltage [Vos = Max Rating 250) yA Drain Current (Vos = 0) |Vos = Max Rating x 0.8 Te = 125°C 4000 WA less Gate-body Leakage Ves=+20V +100 nA |Current (Vos = 0) i ON (*) [‘Svmbot | Paromoter | Test Condens | win. | Tyo. | wax. | nt | Static Drain-source On [Vas = 10V lo=1.5A Resistance Ves=10V Ip=15A Te = 100°C Io(on) [On State Drain Current |Vos > loion) x Ros(on)max 17 Vas = 10 V DYNAMIC Symbol | Parameter Test Conditions Min. [ Typ. | Max. | Unit | Forward Vos > lojon) X Rosioaymax Ip=1.5A] 0.8 | 1.93 Transconductance Ciss Input Capacitance Vos=25V f=1MHz Ves=0 350 460 pF Coss [Output Capacitance 60 | 80 | pF Cis |Reverse Transter 25 | 35 | pF Capacitance ar

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— WM 7929237 0046168 25T mESGTH ——— STP3N5OX! ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON, Symbol | Parameter | Test Conditions min. | typ. | Max. [ unit | taon) |Turn-on Time Voo=250V Ip=15A 35 t Rise Time Re = 502 Ves = 10 V 85 (see test circuit, figure 3) (di/dt)on |Turn-on Current Slope |Von=400V Ip=3A 120 Alus Ae=502 Vos=10V | | _ (see test circuit, figure 5) i | ! Q, Total Gate Charge Von = 400V Ip=3A Ves=10V 25 35 nc Qos, Gate-Source Charge | 6 nc | Qoa |Gate-Drain Charge W nc ‘SWITCHING OFF ‘Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit | tavery [Off-voltage Rise Time |Vop=400V Ip=3A 50 65 ns | te Fall Time Re = 502 Vos = 10 V 20 30 ns te Cross-over Time (see test circuit, figure 5) L 80 105 ns SOURCE DRAIN DIODE { symbol Parameter ___ Test Conditions | min. | Typ. | Max. | unit | | Iso |Source-drain Current 17 ; |som(e) | Source-drain Current 6.8 (pulsed) [Vso (0) [Forward On Voltage iso=1.7A Ves=0 | | ne |v | | ter Reverse Recovery Iso = 2.8A di/dt = 100 A/us 380 ns | Time Von = 100V T= 150°C } On Reverse Recovery (see test circuit, figure 5) 3.8 uc Charge | Ianw [Reverse Recovery 20 A (+) Pulsed: Pulse duration = 300 us, duty cycle 1.5% (+) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 7|CCHE- FA mnt mL wo DY | Hi alll Mani lll iS Sees vo LIT TO TT 1 Ast ie esi”. eit 10%, BaP imsscnesu ati Fes aati ml (EA Sims SF Zn = K Rinne ae A poe nak (FS tom 0 See | [D.c,_ OPERATIONS 00m ees eae esi | p Settle Serie SoS trea aay feet matmetiima ae atch ae) wht matt Fanaa 102 OT AT ey Sts-tomson V7 Sesonscrones om

STPSNSOX! = 7929237 OO4b169 19b MSGTH _ Derating Curve Output Characteristics rm ia wooo Ht; 4H LCL fesmygrny | Lit tty i HAL CNC Eo a SQ JEP’ anpanans BaNGEEe Ko PPE NT Jay Ghee . NE | ABjaeeee ttt ttt | Tt AH Voce ert 0 50 100 150 Toose( °C) 0 5S 10 15 20 25 Vos(¥) Transfer Characteristics Transconductance oT S| Thea] TL 1p (4) Os! PEPE lL oes s_-ETTTory t 3 Per. Saegen SeSnEEe Eee ss + ‘EERE EEE BEpsss=a

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s-t tt [ | fee! | | ESSER ae AEE PE fewer 1 fH Ae AGE HEE ARE] Anna o 2 4 6 8 10 Vos (V) ° 1 2 3 19(A) Static Drain-source On Resistance Gate Charge vs Gate-source Voltage “rtd Coo | ve TTT TTP P|

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— @@ 7929237 0046170 908 MmSGTH _STPSN5OX! Capacitance Variations Normalized Gate Threshold Voltage vs Temperature a cess ey faa ame Vos=Ves 600| Vator rl | Ig=250uA Genk LoS rT ACO} | ES i Cons. t rr I 0.8 <- oh tt I Nets Pt “ Loe4 | oaL LET TTT TTT Normalized On Resistance vs Temperature Turn-on Current Slope Roster) al ei sat — es TTT | 7) ft er +E Le ES HH AR NT wt A INET [tet LT NO Hettee | | ENS a Co q |] SRE LTT LT Pet tT | Turn-off Drain-source Voltage Slope Cross-over Time Veg sxoov | Vso =4000 | EONS) stebe ep NS Lx | i + {--FSH wae | | pif Sees LTP tty Litt tT ° 40 80 120 Re() 9 40 80 120 Re() a seme

STPONSOX! = MM 79259237 OO4bL72 844 MMSGTH Switching Safe Operating Area Accidental Overload Area coxa cz bO FREESE] TTT I bb” FRESE TL at 6 HH aan Hye EH | AHH H+ |

5 TPT TTT ty sti tr Try

3 Ty=150°C 3 tp =20 us

PT peso EEE TT [i vegstov | FETT | Py a ae cae HHH HH HH TT tH [Ty] itty Tr WoT Tr PPT yy Try | SERRE eee LT TTP Pry ye tit | CPE Tr Trey ry rt | © 100 200 300 400 500 Yps{V) 0 100 200 300 400 S00 Yos(V) Source-drain Diode Forward Characteristics ecssong Ys0(¥) PTT ttt Ty i aceeeee ps2 eee ETT 75% eae of | | |_| aan od Ltt | ttt | 1 2 3 4 's0(A) Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms Vceryoss ‘ Yo— 2200 | 3.3 => or lar Yoo low ‘0 3 | v\\ | lo _ Yoo oa A Yoo = wo Le sy Scs-tHomson a na SY/ imcncaisctRomcs ~~

! M@ 7929237 O04b172 780 MMSGTH STP3N5OXI Fig. 3: Switching Times Test Circuits For Fig. 4: Gate Charge Test Circuit Resistive Load Ye _ - Fed cme | la | j 1KO Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times ves fe) we SGs- WwW — kif SES-THOMSON rn