STP3LN80K5 STMICROELECTRONICS | Alldatasheet
Document overview
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- PDF pages: 15
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 IPAK package information
- 4.2 TO-220 type A package information
- 5 Revision history
Features
Order code V DS RDS(on) max ID STP3LN80K5 800 V 3.25 Ω 2 A STU3LN80K5 Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected
Applications
Switching applications
Description
These very high voltage N-channel Power MOSFET are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing STP3LN80K5 3LN80K5 TO-220 Tube STU3LN80K5 IPAK 321 TAB IPAK 1 2 3 TAB TO-220 D(2, TAB) G(1) S(3) AM01476v1
1 Electrical ratings
Table 2: Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 2 A ID Drain current (continuous) at TC = 100 °C 1.25 A ID(1) Drain current (pulsed) 8 A PTOT Total dissipation at TC = 25 °C 45 W dv/dt (2) Peak diode recovery voltage slope 4.5 V/ns dv/dt (3) MOSFET dv/dt ruggedness 50 Tstg Storage temperature range - 55 to 150 °C Tj Operating junction temperature range Notes: (1)Pulse width limited by safe operating area. (2)ISD ≤ 2 A, di/dt ≤ 100 A/µs; VDSpeak < V(BR)DSS, VDD = 640 V. (3)VDS ≤ 640 V. Table 3: Thermal data Symbol Parameter Value Unit TO-220 IPAK Rthj-case Thermal resistance junction-case 2.78 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 100 °C/W Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 0.7 A EAS Single pulse avalanche energy (starting Tj = 25°C, ID = IAR; VDD = 50 V) 155 mJ
2 Electrical characteristics
(TC = 25 °C unless otherwise specified) Table 5: On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 V 800 V IDSS Zero gate voltage drain current VDS = 800 V, VGS = 0 V 1 µA VDS = 800 V, VGS = 0 V, TC = 125 °C(1) 50 µA IGSS Gate body leakage current VGS = ± 20 V, VGS = 0 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 3 4 5 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 1 A 2.75 3.25 Ω Notes: (1)Defined by design, not subject to production test. Table 6: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 100 V, f = 1 MHz, VGS = 0 V - 102 - pF Coss Output capacitance - 11 - pF Crss Reverse transfer capacitance - 0.1 - pF Cotr(1) Equivalent capacitance time related VDS = 0 to 640 V, VGS = 0 V - 20 - pF Coer(2) Equivalent capacitance energy related - 7 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 12 - Ω Qg Total gate charge VDD = 640 V, ID = 2 A, VGS = 10 V ( see Figure 17: "Test circuit for gate charge behavior" ) - 2.63 - nC Qgs Gate-source charge - 0.91 - nC Qgd Gate-drain charge - 1.53 - nC Notes: (1)Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS (2)Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS
Table 7: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 400 V, ID = 1 A, RG = 4.7 Ω, VGS = 10 V ( see Figure 16: "Test circuit for resistive load switching times" and Figure 21: "Switching time waveform" ) - 6.2 - ns tr Rise time - 7 - ns td(off) Turn-off delay time - 30 - ns tf Fall time - 26 - ns Table 8: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current 2 A ISDM(1) Source-drain current (pulsed) 8 A VSD(2) Forward on voltage ISD = 2 A, VGS = 0 V - 1.5 V trr Reverse recovery time ISD = 2 A, di/dt = 100 A/µs, VDD = 60 V ( see Figure 18: "Test circuit for inductive load switching and diode recovery times" ) - 210 ns Qrr Reverse recovery charge - 0.8 µC IRRM Reverse recovery current - 7.6 A trr Reverse recovery time ISD = 2 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C, (see Figure 18: "Test circuit for inductive load switching and diode recovery times" ) - 345 ns Qrr Reverse recovery charge - 1.2 µC IRRM Reverse recovery current - 7.2 A Notes: (1)Pulse width limited by safe operating area. (2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%. Table 9: Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)GSO Gate-source breakdown voltage IGS = ± 1 mA, ID = 0 A 30 - - V The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry.
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area for TO-220 Figure 3: Thermal impedance for TO-220 Figure 4: Safe operating area for IPAK Figure 5: Thermal impedance for IPAK Figure 6: Output characteristics Figure 7: Transfer characteristics K CG34360 c -1 tp (s)10
STP3LN80K5, STU3LN80K5 Test circuits
3 Test circuits
Figure 16: Test circuit for resistive load switching times Figure 17: Test circuit for gate charge behavior Figure 18: Test circuit for inductive load switching and diode recovery times Figure 19: Unclamped inductive load test circuit Figure 20: Unclamped inductive waveform Figure 21: Switching time waveform AM01469v10 47 kΩ 2.7 kΩ 1 kΩ IG= CONST 100 Ω D.U.T. +pulse width VGS 2200 μF VG VDD RL
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
4.1 IPAK package information
Figure 22: IPAK (TO-251) type A package outline
Table 10: IPAK (TO-251) type A package mechanical data Dim. mm Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 0.95 b4 5.20 5.40 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e 2.28 e1 4.40 4.60 H 16.10 L 9.00 9.40 L1 0.80 1.20 0.80 1.00 10°
4.2 TO-220 type A package information
Figure 23: TO-220 type A package outline
Table 11: TO-220 type A mechanical data Dim. mm Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95
5 Revision history
Table 12: Document revision history Date Revision Changes 09-Jul-2015 1 Initial release 28-Jun-2016 2 Updated title and features in cover page. Updated Section 1: "Electrical ratings". Updated Section 2: "Electrical characteristics". Added Section 2.1: "Electrical characteristics (curves)". Document status promoted from preliminary to production data. Minor text changes.