STP36NF03L STMICROELECTRONICS | Alldatasheet

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Technical content

N-CHANNEL 30V - 0.015Ω - 36A TO-220 LOW GATE CHARGE STripFET  POWER MOSFET PRELIMINARY DATA n TYPICAL RDS(on) = 0.015Ω n TYPICAL Qg = 18 nC @ 10V n OPTIMAL R DS(on)xQ g TRADE-OFF n CONDUCTION LOSSES REDUCED n SWITCHING LOSSES REDUCED

DESCRIPTION

This application specific Power Mosfet is the third generation of STMicroelectronics unique ”Single Feature Size ” strip-based process. The resul- ting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high effi- ciency are of paramount importance.

APPLICATIONS

n SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS INTERNAL SCHEMATIC DIAGRAM January 2000 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (VGS =0 ) 3 0 V V DGR Drain- gate Voltage (RGS =2 0k Ω )3 0 V V GS Gate-source Voltage ± 20 V ID Drain Current (continuous) at Tc =2 5 oC3 6 A ID Drain Current (continuous) at Tc =1 0 0oC2 5 A IDM (•) Drain Current (pulsed) 144 A P tot Total Dissipation at Tc =2 5 oC7 5 W Derating Factor 0.5 W/ o C Tstg Storage Temperature -65 to 175 o C Tj Max. Operating Junction Temperature 175 o C (•) Pulse width limited by safe operating area TYPE V DSS R DS(on) ID STP36NF03L 30 V < 0.02 Ω 36 A TO-220

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 62.5 300 oC/W oC/W oC ELECTRICAL CHARACTERISTICS (Tcase =2 5oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage ID =2 5 0µ AV GS =0 3 0 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) V DS =M a xR a t i n g V DS =M a xR a t i n g T c =125 oC µ A µ A IGSS Gate-body Leakage Current (VDS =0 ) V GS = ± 20 V ± 100 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(th) Gate Threshold Voltage VDS =V GS ID = 250 µ A1 2 . 5 V R DS(on) Static Drain-source On Resistance V GS =1 0 V I D =1 8A V GS =5 V I D =9A 0.015 0.026 0.020 0.035 Ω Ω ID(on) On State Drain Current VDS >I D(on) xR DS(on )max V GS =1 0V 36 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗)F o r w a r d Transconductance V DS >I D(on) xR DS(on )max ID =18 A 20 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =2 5V f=1M H z V GS = 0 750 270 pF pF pF STP36NF03L

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time V DD =1 5V I D =1 8A R G =4 . 7 Ω V GS =4 . 5V (Resistive Load, see fig. 3) 200 ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD =2 4V I D =3 2A V GS =1 0V 1 8 21 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time V DD =1 5V I D =1 8A R G =4 . 7 Ω V GS =4 . 5V (Resistive Load, see fig. 3) ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 144 A A V SD (∗)F o r w a r d O n V o l t a g e ISD =36 A V GS =0 1 . 5 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 36 A di/dt = 100 A/ µ s V DD =1 5V T j =1 5 0oC (see test circuit, fig. 5) 1.6 ns nC A (∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area STP36NF03L

Fig. 1:Unclamped Inductive Load Test Circuit Fig. 3:Switching Times Test Circuits For Resistive Load Fig. 2:Unclamped Inductive Waveform Fig. 4:Gate Charge test Circuit Fig. 5:Test Circuit For Inductive Load Switching And Diode Recovery Times STP36NF03L

DIM. mm inch A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 A C D E F G Dia. TO-220 MECHANICAL DATA P011C STP36NF03L

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