STP36NE06 STMICROELECTRONICS | Alldatasheet

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Technical content

N - CHANNEL 60V - 0.032Ω - 36A - TO-220/TO-220FP STripFET POWER MOSFET n TYPICAL RDS(on) = 0.032Ω n EXCEPTIONAL dv/dt CAPABILITY n 100% AVALANCHE TESTED n LOW GATE CHARGE 100 oC n APPLICATION ORIENTED CHARACTERIZATION

DESCRIPTION

This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size ” strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalance characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility.

APPLICATIONS

n HIGH CURRENT, HIGH SPEED SWITCHING n SOLENOID AND RELAY DRIVERS n MOTOR CONTROL, AUDIO AMPLIFIERS n DC-DC & DC-AC CONVERTERS INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP36NE06 STP36NE06FP V DS Drain-source Voltage (VGS =0 ) 6 0 V V DGR Drain- gate Voltage (RGS =2 0k Ω ) 60 V V GS Gate-source Voltage ± 20 V ID Drain Current (continuous) at Tc =2 5 o C3 6 2 0 A ID Drain Current (continuous) at Tc =1 0 0oC2 4 1 4 A IDM (•) Drain Current (pulsed) 144 144 A P tot Total Dissipation at Tc =2 5 oC1 0 0 3 5 W Derating Factor 0.66 0.27 W/ oC V ISO Insulation Withstand Voltage (DC)  2000 V dv/dt Peak Diode Recovery voltage slope 7 V/ns Tstg Storage Temperature -65 to 175 oC Tj Max. Operating Junction Temperature 175 oC (•) Pulse width limited by safe operating area ( 1)ISD ≤ 36 A,di/dt≤ 300 A/µs, VDD ≤ V(BR)DSS ,Tj≤ TJMAX TYPE V DSS R DS(on) ID STP36NE06 STP36NE06FP 60 V 60 V <0 . 0 4 0Ω <0 . 0 4 0Ω 36 A 20 A July 1998 TO-220 TO-220FP

R thj-case Thermal Resistance Junction-case Max 1.51 4.28 oC/W R thj- amb R thc-sink Tl Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 62.5 0.5 300 oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 36 A E AS Single Pulse Avalanche Energy (starting Tj =2 5 oC, ID =I AR ,V DD =2 5 V ) 180 mJ ELECTRICAL CHARACTERISTICS (Tcase =2 5oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage ID =2 5 0µ AV GS =0 60 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) V DS =M a xR a t i n g V DS =M a xR a t i n g T c =1 2 5 oC µ A µ A IGSS Gate-body Leakage Current (VDS =0 ) V GS = ± 20 V ± 100 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(th) Gate Threshold Voltage V DS =V GS ID =2 5 0µ A 234V R DS(on) Static Drain-source On Resistance V GS =1 0 V ID =1 8A 0 . 0 3 2 0 . 0 4 Ω ID(on) On State Drain Current VDS >I D(on) xR DS(on)max V GS =1 0V 36 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗)F o r w a r d Transconductance V DS >I D(on) xR DS(on)max ID =18 A 7 15 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =2 5V f=1M H z V GS = 0 2115 260 2800 350 pF pF pF STP36NE06FP

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time V DD =3 0V I D =1 8A R G =4.7Ω V GS =1 0V 115 ns ns (di/dt)on Turn-on Current Slope V DD =4 8V I D =3 6A R G =4 . 7 Ω V GS =10 V

250 A/ µ s

V DD =4 8V I D =3 6A V GS =1 0V 5 0 70 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time V DD =4 8V I D =3 6A R G =4.7 Ω VGS =1 0V ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 144 A A V SD (∗) Forward On Voltage I SD =3 6A V GS =0 1 . 5 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 36 A di/dt = 100 A/ µ s V DD =3 0V T j =1 5 0oC 245 6.5 ns µ C A (∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area for TO-220 Safe Operating Area for TO-220FP STP36NE06FP

Thermal Impedance for TO-220 Output Characteristics Transconductance Thermal Impedance forTO-220FP Transfer Characteristics Static Drain-source On Resistance STP36NE06FP

Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Capacitance Variations Normalized On Resistance vs Temperature STP36NE06FP

Fig. 1:Unclamped Inductive Load Test Circuit Fig. 3:Switching Times Test Circuits For Resistive Load Fig. 2:Unclamped Inductive Waveform Fig. 4:Gate Charge test Circuit Fig. 5:Test Circuit For Inductive Load Switching And Diode Recovery Times STP36NE06FP

DIM. mm inch A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 A C D E F G Dia. TO-220 MECHANICAL DATA P011C STP36NE06FP

DIM. mm inch A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 A B D E H G F 123 TO-220FP MECHANICAL DATA STP36NE06FP

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